X-ray exposure process for preventing electrostatic attraction or contact of X-ray masks

Claim 2

An X-ray exposure process comprising the steps of: arranging an X-ray mask adjacent to and spaced from a wafer having an X-ray sensitive membrane thereon, the mask including a support frame and a support membrane held thereon which is X-ray transmissive and has an electrical resistivity of 10 Ω. cm. or less, and an X-ray absorber provided in a pattern form on the surface of the support membrane; irradiating the wafer having the X-ray sensitive member thereon with X-rays through the X-ray mask; and cancelling the potential difference between the X-ray mask and the wafer.

Claim 3

The X-ray exposure process according to claim 1, wherein the support membrane includes at least one of conductive ceramics and a conductive organic compound.

Claim 4

The X-ray exposure process according to claim 1, wherein the support membrane includes an organic material having a thickness of from 1 μm to 15 μm.

Claim 5

The X-ray exposure process according to claim 1, wherein the support membrane includes an inorganic material having a thickness of from 0.5 μm to 5 μm.

Claim 6

The X-ray exposure process according to claim 1, further comprising setting the X-ray mask with a gap of from 5 μm to 100 μm relative to the wafer having the X-ray sensitive member thereon.

Claim 7

The X-ray exposure process according to claim 1, further comprising stretching the support membrane made of an organic material over the support frame.

Claim 8

The X-ray exposure process according to claim 1, further comprising arranging the surface of the X-ray mask parallel to the surface of the wafer having the X-ray sensitive member thereon.

Claim 9

The X-ray exposure process according to claim 1, wherein said cancelling step comprises electrically connecting the support membrane to the wafer having the X-ray sensitive member thereon.

Claim 10

The X-ray exposure process according to claim 1, wherein said cancelling step comprises grounding each of the support membrane and the wafer having the X-ray sensitive member thereon.

Claim 11

The X-ray exposure process according to claim 1, wherein said cancelling step comprises applying a voltage to each of the support membrane and the wafer having the X-ray sensitive member thereon to eliminate a potential difference therebetween.

Claim 12

An X-ray exposure process according to claim 1, wherein said cancelling step is effected at least during said X-ray irradiation step.

Claim 13

An X-ray mask exposure process comprising the steps of: arranging an X-ray mask adjacent to and spaced from a wafer having an X-ray sensitive member thereon, the mask including a support frame and a support membrane held thereon which is X-ray transmissive and has an electrical resistivity of 10 Ω or less, and an X-ray absorber provided in a pattern form on the surface of the support membrane; registering the X-ray mask and the wafer with an alignment light; irradiating the wafer having the X-ray sensitive member thereon with X-rays through the X-ray mask; and cancelling the potential difference between the X-ray mask and the wafer.

Claim 14

An X-ray mask exposure process comprising the steps of: arranging an X-ray mask adjacent to and spaced from a wafer having an X-ray sensitive member thereon, the mask including a support frame and a support membrane held thereon which is X-ray transmissive and has an electrical resistivity of 10 Ω or less, and an X-ray absorber provided in a pattern form on the surface of the support membrane; registering the X-ray mask and the wafer with an alignment light; irradiating the wafer having the X-ray sensitive member thereon with X-rays through the X-ray mask; and cancelling the potential difference between the X-ray mask and the wafer.

Claim 15

The X-ray exposure process according to claim 12, wherein the support membrane includes at least one of conductive ceramics and a conductive organic compound.

Claim 16

The X-ray exposure process according to claim 12, wherein the support membrane includes an organic material having a thickness of from 1 μm to 15 μm.

Claim 17

The X-ray exposure process according to claim 12, wherein the support membrane includes an inorganic material having a thickness of from 0.5 μm to 5 μm.

Claim 18

The X-ray exposure process according to claim 12, further comprising setting the X-ray mask with a gap of from 5 μm to 100 μm relative to the wafer having the X-ray sensitive member thereon.

Claim 19

The X-ray exposure process according to claim 12, further comprising stretching the support membrane made of an organic material over the support frame.

Claim 20

The X-ray exposure process according to claim 12, further comprising arranging the surface of the X-ray mask parallel to the surface of the wafer having the X-ray sensitive member thereon.

Claim 21

The X-ray exposure process according to claim 12, wherein said cancelling step comprises electrically connecting the support membrane to the wafer having the X-ray sensitive member thereon.

Claim 22

The X-ray exposure process according to claim 12, wherein said cancelling step comprises grounding each of the support membrane and the wafer having X-ray sensitive member thereon.

Claim 23

The x-ray exposure process according to claim 12, wherein said cancelling step comprises applying a voltage to each of the support membrane and the wafer having the X-ray sensitive member thereon to eliminate a potential difference therebetween.

Claim 24

The X-ray exposure process according to claim 12, wherein said registering step comprises registering the X-ray mask and the wafer with one of visible and infrared light as alignment light.

Claim 25

An X-ray exposure process according to claim 12, wherein said cancelling step is effected at least during said X-ray irradiation step.