Patent US4334351A successfully refreshed from Google Patents.
Patent US4618535A successfully refreshed from Google Patents.
US5052033A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reflection type mask
Assignee: Canon Inc
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Filing: 1990-12-28
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Granted: 1991-09-24
•
Expires: 2010-12-28
Abstract
Abstract A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.
Inventors
- 👤 Tsutomu Ikeda
- 👤 Yutaka Watanabe
- 👤 Masayuki Suzuki
- 👤 Masami Hayashida
- 👤 Yasuaki Fukuda
- 👤 Shigetaro Ogura
- 👤 Takashi Iizuka
- 👤 Masahito Niibe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:43
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/22; G03F1/24; B; B82; B82Y; B82Y10/00; B82Y40/00; G03F1/54; G03F1/58; G03F7/00; G03F7/70; G03F7/70008; G03F7/70033; G03F7/70216; G03F7/70233; G03F7/70283; G03F7/708; G03F7/70858; G03F7/70866; G03F7/70875; G03F7/7095; G03F7/70958
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
74 words
A reflection type mask usable in an exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material, by use of radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising: a reflective portion formed by a multilayered film; and a non-reflective portion formed on said reflective portion to provide a pattern, wherein said non-reflective portion is provided by an anti-reflection film having a multilayered structure.
Claim 2
Dependent Claim
74 words
A reflection type mask usable in an exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material, by use of radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising: a reflective portion formed by a multilayered film; and a non-reflective portion formed on said reflective portion to provide a pattern, wherein said non-reflective portion is provided by an anti-reflection film having a multilayered structure.
Claim 3
Dependent Claim
46 words
A reflection type mask according to claim 1, wherein each layer in the multilayered structure of said non-reflective portion has a thickness approximately of an order of λ/4n where λis the wavelength of radiation to be used with said mask and n is the refractive index.
Claim 4
Dependent Claim
110 words
A reflection type mask usable in an exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material, by use of radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising: a reflective portion formed by a multilayered film; and a non-reflective portion formed on said reflective portion to provide a pattern, wherein said non-reflective portion is made of a material which is effective to absorb soft X-rays or vacuum ultraviolet rays and wherein said absorbing material of said non-reflective portion has a linear expansion coefficient not greater than 5×10 -5 deg -1 and a heat conductivity not less than 0.1 J/cm.s.deg.
Claim 5
Dependent Claim
110 words
A reflection type mask usable in an exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material, by use of radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising: a reflective portion formed by a multilayered film; and a non-reflective portion formed on said reflective portion to provide a pattern, wherein said non-reflective portion is made of a material which is effective to absorb soft X-rays or vacuum ultraviolet rays and wherein said absorbing material of said non-reflective portion has a linear expansion coefficient not greater than 5×10 -5 deg -1 and a heat conductivity not less than 0.1 J/cm.s.deg.
Claim 6
Dependent Claim
106 words
A reflection type mask usable in a semiconductor device manufacturing exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material by use of radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising: a substrate which is non-reflective to soft X-rays or vacuum ultraviolet rays to be used in the exposure apparatus, wherein said substrate is made of a material having a linear expansion coefficient not greater than 1×10 -3 /K and a heat conductivity not less than 20 w/mK; and a reflective portion comprising a multilayered film being formed on said substrate to provide a pattern.
Claim 7
Dependent Claim
106 words
A reflection type mask usable in a semiconductor device manufacturing exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material by use of radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising: a substrate which is non-reflective to soft X-rays or vacuum ultraviolet rays to be used in the exposure apparatus, wherein said substrate is made of a material having a linear expansion coefficient not greater than 1×10 -3 /K and a heat conductivity not less than 20 w/mK; and a reflective portion comprising a multilayered film being formed on said substrate to provide a pattern.
Claim 8
Dependent Claim
73 words
A reflection type mask usable with an imaging optical system having an optical characteristic and for forming an image of the mask on a workpiece, said mask comprising: a substrate comprising a curved surface for complementing the optical characteristic of the imaging optical system, said substrate being non-reflective to radiation energy; and a pattern formed on the surface of said substrate being provided by a multilayered thin film reflective to the radiation energy.
Claim 9
Dependent Claim
73 words
A reflection type mask usable with an imaging optical system having an optical characteristic and for forming an image of the mask on a workpiece, said mask comprising: a substrate comprising a curved surface for complementing the optical characteristic of the imaging optical system, said substrate being non-reflective to radiation energy; and a pattern formed on the surface of said substrate being provided by a multilayered thin film reflective to the radiation energy.
Claim 10
Dependent Claim
30 words
A reflection type mask according to claim 5, wherein said curved surface of said substrate complements curvature of field as the optical characteristic of the imaging optical system being complemented.
Claim 11
Dependent Claim
92 words
A reflection type mask usable with an imaging optical system having an optical characteristic and for forming an image of the mask on a workpiece, said mask comprising: a substrate comprising a curved surface for complementing the optical characteristic of the imaging optical system; a reflective portion formed on the surface of said substrate being provided by a multilayered thin film reflective to radiation energy; and a non-reflective portion formed on said reflective portion being non-reflective to the radiation energy, said non-reflective portion cooperating with said reflective portion to provide a pattern.
Claim 12
Dependent Claim
92 words
A reflection type mask usable with an imaging optical system having an optical characteristic and for forming an image of the mask on a workpiece, said mask comprising: a substrate comprising a curved surface for complementing the optical characteristic of the imaging optical system; a reflective portion formed on the surface of said substrate being provided by a multilayered thin film reflective to radiation energy; and a non-reflective portion formed on said reflective portion being non-reflective to the radiation energy, said non-reflective portion cooperating with said reflective portion to provide a pattern.
Claim 13
Dependent Claim
30 words
A reflection type mask according to claim 7, wherein said curved surface of said substrate complements curvature of field as the optical characteristic of the imaging optical system being complemented.
Claim 14
Dependent Claim
58 words
A reflection type mask, comprising: a reflective portion having a multilayered structure in which different materials showing different optical constants with regard to soft X-ray and/or vacuum ultraviolet rays are layered alternately; and a non-reflective portion formed in said reflective portion to provide a pattern, wherein the regularity of the multilayered structure is destroyed in said non-reflective portion.
Claim 15
Dependent Claim
58 words
A reflection type mask, comprising: a reflective portion having a multilayered structure in which different materials showing different optical constants with regard to soft X-ray and/or vacuum ultraviolet rays are layered alternately; and a non-reflective portion formed in said reflective portion to provide a pattern, wherein the regularity of the multilayered structure is destroyed in said non-reflective portion.
Claim 16
Independent Claim
81 words
A method of manufacturing a reflection type mask, said method comprising the steps of: alternately layering different materials showing different optical constants with respect to at least one of soft X-rays and vacuum ultraviolet rays to provide a reflective portion of a multilayered structure; and destroying the regularity of the multilayered structure of a part of the reflective portion, in accordance with the geometrical configuration of a pattern to be formed on the mask, so as to provide a non-reflective portion.
Claim 17
Independent Claim
81 words
A method of manufacturing a reflection type mask, said method comprising the steps of: alternately layering different materials showing different optical constants with respect to at least one of soft X-rays and vacuum ultraviolet rays to provide a reflective portion of a multilayered structure; and destroying the regularity of the multilayered structure of a part of the reflective portion, in accordance with the geometrical configuration of a pattern to be formed on the mask, so as to provide a non-reflective portion.
Claim 18
Dependent Claim
29 words
A method according to claim 10, wherein at least one of a converging ion beam and a laser beam is used to destroy the regularity of the multilayered structure.
Claim 19
Independent Claim
76 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a pattern defined by (i) a reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion comprising a multilayered film formed on the reflecting portion; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.
Claim 20
Independent Claim
76 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a pattern defined by (i) a reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion comprising a multilayered film formed on the reflecting portion; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.
Claim 21
Dependent Claim
14 words
A method according to claim 12, further comprising irradiating the mask with soft X-rays.
Claim 22
Dependent Claim
15 words
A method according to claim 12, further comprising irradiating the mask with vacuum ultraviolet rays.
Claim 23
Independent Claim
96 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a pattern defined by (i) a reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion made of a material effective to absorb radiation, and having a linear expansion coefficient not greater than 5×10 -5 /deg and a heat conductivity not less than 0.1 J/cm.s.deg; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.
Claim 24
Independent Claim
96 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a pattern defined by (i) a reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion made of a material effective to absorb radiation, and having a linear expansion coefficient not greater than 5×10 -5 /deg and a heat conductivity not less than 0.1 J/cm.s.deg; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.
Claim 25
Dependent Claim
14 words
A method according to claim 15, further comprising irradiating the mask with soft X-rays.
Claim 26
Dependent Claim
15 words
A method according to claim 15, further comprising irradiating the mask with vacuum ultraviolet rays.
Claim 27
Independent Claim
106 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a pattern defined by (i) a reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion made of a material effective to absorb radiation, and having a linear expansion coefficient not greater than 5×10 -5 /K and a heat conductivity not less than 20 W/mK, wherein the reflecting portion is provided on the non-reflecting portion; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.
Claim 28
Independent Claim
106 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a pattern defined by (i) a reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion made of a material effective to absorb radiation, and having a linear expansion coefficient not greater than 5×10 -5 /K and a heat conductivity not less than 20 W/mK, wherein the reflecting portion is provided on the non-reflecting portion; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.
Claim 29
Dependent Claim
14 words
A method according to claim 18, further comprising irradiating the mask with soft X-rays.
Claim 30
Dependent Claim
15 words
A method according to claim 18, further comprising irradiating the mask with vacuum ultraviolet rays.
Claim 31
Independent Claim
99 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a substrate made of a material effective to absorb radiation, and a pattern formed on the substrate with a multilayered film for reflection of the radiation, the substrate having curved surface effective to compensate for an optical characteristic of an imaging optical system; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask and influenced by the imaging optical system, whereby the pattern of the mask is transferred to the wafer.
Claim 32
Independent Claim
99 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a substrate made of a material effective to absorb radiation, and a pattern formed on the substrate with a multilayered film for reflection of the radiation, the substrate having curved surface effective to compensate for an optical characteristic of an imaging optical system; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask and influenced by the imaging optical system, whereby the pattern of the mask is transferred to the wafer.
Claim 33
Dependent Claim
14 words
A method according to claim 21, further comprising irradiating the mask with soft X-rays.
Claim 34
Dependent Claim
15 words
A method according to claim 21, further comprising irradiating the mask with vacuum ultraviolet rays.
Claim 35
Independent Claim
99 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a substrate having a curved surface effective to compensate for an optical characteristic of an imaging optical system, and a pattern defined by a reflecting portion formed with a multilayered film effective to reflect radiation and a non-reflecting portion not reflective to radiation; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask and influenced by the imaging optical system, whereby the pattern of the mask is transferred to the wafer.
Claim 36
Independent Claim
99 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a substrate having a curved surface effective to compensate for an optical characteristic of an imaging optical system, and a pattern defined by a reflecting portion formed with a multilayered film effective to reflect radiation and a non-reflecting portion not reflective to radiation; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask and influenced by the imaging optical system, whereby the pattern of the mask is transferred to the wafer.
Claim 37
Dependent Claim
23 words
A method according to claim 24, further comprising forming the reflecting portion on the substrate, and the non-reflecting portion on the reflecting portion.
Claim 38
Dependent Claim
14 words
A method according to claim 24, further comprising irradiating the mask with soft X-rays.
Claim 39
Dependent Claim
15 words
A method according to claim 24, further comprising irradiating the mask with vacuum ultraviolet rays.
Claim 40
Independent Claim
85 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a pattern defined by (i) as reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion formed by a portion of the reflecting portion, in which portion regularity of the multilayered film is destroyed; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.
Claim 41
Independent Claim
85 words
A method of manufacturing semiconductor devices, comprising the steps of: preparing a reflection type mask including a pattern defined by (i) as reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion formed by a portion of the reflecting portion, in which portion regularity of the multilayered film is destroyed; and irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.
Claim 42
Dependent Claim
14 words
A method according to claim 28, further comprising irradiating the mask with soft X-rays.
Claim 43
Dependent Claim
15 words
A method according to claim 28, further comprising irradiating the mask with vacuum ultraviolet rays.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-09-23 | 1995-03-25 | 1995-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-23 | 1999-03-25 | 1999-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-23 | 2003-03-25 | 2003-09-24 | $7700.00 | Window Closed / Lapsed |