Patent US5084126A successfully refreshed from Google Patents.
US5084126A
Expired / Lapsed
US
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Method and apparatus for uniform flow distribution in plasma reactors
Assignee: Texas Instruments Inc
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Filing: 1988-12-29
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Granted: 1992-01-28
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Expires: 2008-12-29
Abstract
Abstract A plasma flow is uniformly distributed over the surface of a water (76) by an L-shaped tube (64) and a distribution ring (62). A dispersal gas, which may either comprise an inert gas or a gas that cooperates with the reactive species of the plasma, is sprayed from the tube (64) and the ring (62) into the flow of the plasma. The ring (62) comprises a hollow tube encircling the outlet of a plasma reactor. A gas is circulated through the ring (62) within the hollow interior (66) and is emitted therefrom by nozzles (70). The tube (64) comprises a quartz or anodized aluminum L-shaped tube which is positioned directly in the flow of the plasma. The gas is emitted from the tube (64) in a direction directly opposite and into the flow of the plasma.
Inventors
- 👤 Jeffrey A. McKee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:40
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45502; C23C16/45563; C23C16/4558; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
60 words
An apparatus for providing uniform flow distribution of plasma to a semiconductor wafer, comprising: a gas; a gas dispersal unit positioned adjacent the flow of the plasma, said unit defining hole for expulsion of said gas; and adjustable nozzles attached over said holes for directing said gas into the plasma to uniformly distribute flow of the plasma to the wafer.
Claim 2
Independent Claim
60 words
An apparatus for providing uniform flow distribution of plasma to a semiconductor wafer, comprising: a gas; a gas dispersal unit positioned adjacent the flow of the plasma, said unit defining hole for expulsion of said gas; and adjustable nozzles attached over said holes for directing said gas into the plasma to uniformly distribute flow of the plasma to the wafer.
Claim 3
Dependent Claim
19 words
The apparatus of claim 1, wherein said gas dispersal unit comprises a ring surrounding the flow of the plasma.
Claim 4
Dependent Claim
11 words
The apparatus of claim 2, wherein said ring comprises anodized aluminum.
Claim 5
Dependent Claim
11 words
The apparatus of claim 2, wherein said ring comprises stainless steel.
Claim 6
Independent Claim
44 words
An apparatus for providing uniform flow distribution of plasma to a semiconductor wafer comprising: a gas; and a tube positioned directly in the flow of the plasma to allow expulsion of said gas in a direction opposite and into the flow of the plasma.
Claim 7
Independent Claim
44 words
An apparatus for providing uniform flow distribution of plasma to a semiconductor wafer comprising: a gas; and a tube positioned directly in the flow of the plasma to allow expulsion of said gas in a direction opposite and into the flow of the plasma.
Claim 8
Dependent Claim
13 words
The apparatus of claim 5, wherein said tube comprises a generally L-shaped tube.
Claim 9
Dependent Claim
10 words
The apparatus of claim 5, wherein said tube comprises quartz.
Claim 10
Dependent Claim
11 words
The apparatus of claim 5, wherein said tube comprises anodized aluminum.
Claim 11
Independent Claim
71 words
An apparatus for providing uniform flow distribution of plasma to a semiconductor wafer comprising: a gas; a tube positioned directly in the flow of the plasma to allow expulsion of a first said gas in a direction directly opposite and into the flow the plasma; and a generally hollow container positioned around the flow the plasma, said container having holes therethrough for expulsion of a second said gas into the plasma.
Claim 12
Independent Claim
71 words
An apparatus for providing uniform flow distribution of plasma to a semiconductor wafer comprising: a gas; a tube positioned directly in the flow of the plasma to allow expulsion of a first said gas in a direction directly opposite and into the flow the plasma; and a generally hollow container positioned around the flow the plasma, said container having holes therethrough for expulsion of a second said gas into the plasma.
Claim 13
Dependent Claim
16 words
The apparatus of claim 1, wherein said gas comprises a reactive species corresponding to the plasma.
Claim 14
Dependent Claim
12 words
The apparatus of claim 1, wherein said gas comprises an inert gas.
Claim 15
Dependent Claim
11 words
The apparatus of claim 11, wherein said inert gas comprises argon.
Claim 16
Dependent Claim
11 words
The apparatus of claim 11, wherein said inert gas comprises nitrogen.
Claim 17
Dependent Claim
11 words
The apparatus of claim 11, wherein said inert gas comprises helium.
Claim 18
Independent Claim
69 words
An apparatus for providing even flow distribution of plasma to process a semiconductor wafer in a downstream remote reactor, comprising: a supply of dispersal gas; a sprayer positioned adjacent an outlet of the reactor, said sprayer defining apertures to emit said gas; and adjustable nozzles over said apertures to direct said gas into the flow of the plasma to uniformly distribute the flow of the plasma to the wafer.
Claim 19
Independent Claim
69 words
An apparatus for providing even flow distribution of plasma to process a semiconductor wafer in a downstream remote reactor, comprising: a supply of dispersal gas; a sprayer positioned adjacent an outlet of the reactor, said sprayer defining apertures to emit said gas; and adjustable nozzles over said apertures to direct said gas into the flow of the plasma to uniformly distribute the flow of the plasma to the wafer.
Claim 20
Dependent Claim
28 words
The apparatus of claim 15, wherein said sprayer comprises a jet arranged to emit said gas in a direction directly opposite and into the flow of the plasma.
Claim 21
Dependent Claim
13 words
The apparatus of claim 16, wherein said jet comprises a generally L-shaped tube.
Claim 22
Dependent Claim
11 words
The apparatus of claim 17, wherein said L-shaped tube comprises quartz.
Claim 23
Dependent Claim
12 words
The apparatus of claim 17, wherein said L-shaped tube comprises anodized aluminum.
Claim 24
Dependent Claim
68 words
The apparatus of claim 15, wherein said sprayer comprises: a jet arranged to emit a first said gas in a direction directly opposite and into the flow of the plasma; a tube positioned around an outlet of the reactor, said tube having apertures formed therein to emit a second said gas; and adjustable nozzles over said apertures to direct said second gas into the flow of the plasma.
Claim 25
Dependent Claim
16 words
The apparatus of claim 15, wherein said gas comprises a reactive species corresponding to the plasma.
Claim 26
Dependent Claim
12 words
The apparatus of claim 15, wherein said gas comprises an inert gas.
Claim 27
Dependent Claim
11 words
The apparatus of claim 22, wherein said inert gas comprises argon.
Claim 28
Dependent Claim
11 words
The apparatus of claim 22, wherein said inert gas comprises nitrogen.
Claim 29
Dependent Claim
11 words
The apparatus of claim 22, wherein said inert gas comprises helium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-01-27 | 1995-07-29 | 1996-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-27 | 1999-07-29 | 2000-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-27 | 2003-07-29 | 2004-01-28 | $7700.00 | Window Closed / Lapsed |