Patent US5084413A successfully refreshed from Google Patents.
US5084413A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for filling contact hole
Assignee: Panasonic Holdings Corp
•
Filing: 1990-05-29
•
Granted: 1992-01-28
•
Expires: 2010-05-29
Abstract
Abstract A method for filling a contact hole in which (i) a silicon dioxide layer is formed on a silicon substrate; (ii) a contact hole is formed in the silicon dioxide layer; (iii) polysilicon film is formed on the side and bottom surface portions of the contact hole; (iv) gas containing tungsten reacts with the film; and (v) the contact hole is filled up with tungsten.
Inventors
- 👤 Tsutomu Fujita
- 👤 Takao Kakiuchi
- 👤 Hiroshi Yamamoto
- 👤 Shoichi Tanimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:06
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10W20/032; H10W20/033; H10W20/042; H10W20/045; H10W20/047; H10W20/054
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
189 words
A method for filling a contact hole with a metal comprising: forming a shallow impurity region of less than about 0.2 μm depth of a first conductive type in a silicon substrate of a second conductive type; forming an insulating layer on said silicon substrate; forming a contact hole on said shallow impurity region through said insulating layer; forming a conductive material on the entire surface of said contact hole and said insulating layer; forming a mask on the entire surface of said conductive material; removing said mask except for portions of the lower side surface and bottom surface located in said contact hole; selectively leaving said conductive material on the lower side surface and bottom surface portions of said contact hole by etching said conductive material using said mask; reacting a gas containing a metal with said conductive material by a reducing reaction so that said metal is selectively grown on said conductive material which suppresses the direct reaction between said gas with said shallow impurity region; and filling said contact hole with said metal whereby ohmic contact is formed between said metal and said shallow impurity region.
Claim 2
Independent Claim
189 words
A method for filling a contact hole with a metal comprising: forming a shallow impurity region of less than about 0.2 μm depth of a first conductive type in a silicon substrate of a second conductive type; forming an insulating layer on said silicon substrate; forming a contact hole on said shallow impurity region through said insulating layer; forming a conductive material on the entire surface of said contact hole and said insulating layer; forming a mask on the entire surface of said conductive material; removing said mask except for portions of the lower side surface and bottom surface located in said contact hole; selectively leaving said conductive material on the lower side surface and bottom surface portions of said contact hole by etching said conductive material using said mask; reacting a gas containing a metal with said conductive material by a reducing reaction so that said metal is selectively grown on said conductive material which suppresses the direct reaction between said gas with said shallow impurity region; and filling said contact hole with said metal whereby ohmic contact is formed between said metal and said shallow impurity region.
Claim 3
Dependent Claim
22 words
The method of claim 1, wherein the conductive material is W, Mo, WSi 2 , MoSi 2 , polysilicon, or amorphous silicon.
Claim 4
Dependent Claim
22 words
The method of claim 1, wherein the gas is MoF 6 , WF 6 , W(CO) 6 , or Mo(CO) 6 .
References Cited (Backward Citations)
US3881242A
Cited
US4107726A
Cited
US4253888A
Cited
US4403392A
Cited
US4343676A
Cited
US4349408A
Cited
US4481706A
Cited
JPS5854651A
Cited
JPS58197851A
Cited
US4673592A
Cited
US4473598A
Cited
US4443930A
Cited
JPS59205735A
Cited
US4540607A
Cited
US4587710A
Cited
US4720908A
Cited
US4589928A
Cited
US4589196A
Cited
JPS61168256A
Cited
US4676847A
Cited
JPS61214449A
Cited
EP0211318A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-27 | 1995-07-29 | 1996-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-27 | 1999-07-29 | 2000-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-27 | 2003-07-29 | 2004-01-28 | $7700.00 | Window Closed / Lapsed |