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US5087296A
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US
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Solar battery and process for preparing same
Assignee: Canon Inc
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Filing: 1990-11-08
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Granted: 1992-02-11
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Expires: 2010-11-08
Abstract
Abstract A solar battery comprises a substrate, a first semiconductor layer of a first conduction type comprising a single crystal singly grown on a nucleation surface (S NDL ) formed on the surface of said substrate as the base for growing, said nucleation surface (S NDL ) being comprised of a material which is sufficiently greater in nucleation density (ND) than the material constituting the surface of said substrate and having a sufficiently fine area such that only a single nucleus grows, a second semiconductor layer of a second conduction type different than the conduction type of said first semiconductor layer and means for taking out the power.
Inventors
- 👤 Shigeki Kondo
- 👤 Hidemasa Mizutani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:11
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; H10F71/00; H10F71/121; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S117/00; Y10S117/913; Y10S148/00; Y10S148/122; Y10S148/152
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
149 words
A solar battery comprising: (a) a substrate, a first semiconductor layer of a first conductivity type including a single crystal grown on a nucleation surface (S NDL ) formed on a small area of the surface of said substrate as the base for said single crystal growth, said nucleation surface (S NDL ) being comprised of an amorphous material which is sufficiently greater in nucleation density (ND) than the material constituting the surface of said substrate and having a sufficiently small area so as to form only a single nucleus from which said single crystal is grown; said nucleation surface positioned on said substrate so as to grow said single crystal to a desired size; (b) an overlying second semiconductor layer of a second conductivity type different than the conduction conductivity type of said first semiconductor layer; and (c) means for outputting the power generated by said solar battery.
Claim 2
Dependent Claim
149 words
A solar battery comprising: (a) a substrate, a first semiconductor layer of a first conductivity type including a single crystal grown on a nucleation surface (S NDL ) formed on a small area of the surface of said substrate as the base for said single crystal growth, said nucleation surface (S NDL ) being comprised of an amorphous material which is sufficiently greater in nucleation density (ND) than the material constituting the surface of said substrate and having a sufficiently small area so as to form only a single nucleus from which said single crystal is grown; said nucleation surface positioned on said substrate so as to grow said single crystal to a desired size; (b) an overlying second semiconductor layer of a second conductivity type different than the conduction conductivity type of said first semiconductor layer; and (c) means for outputting the power generated by said solar battery.
Claim 3
Dependent Claim
45 words
The solar battery according to claim 1, wherein a third single crystalline semiconductor layer having an impurity concentration lower than that of said first semiconductor layer is formed on said first semiconductor layer, and said second semiconductor layer is formed on the third semiconductor layer.
Claim 4
Dependent Claim
31 words
The solar battery according to claim 1, wherein a plural number of pairs of said first semiconductor layer and said second semiconductor layer are formed on the surface of said substrate.
Claim 5
Dependent Claim
16 words
The solar battery according to claim 1, wherein said first semiconductor layer is comprised of silicon.
Claim 6
Dependent Claim
16 words
The solar battery of claim 1, wherein the material comprising the nucleation surface is silicon nitride.
Claim 7
Dependent Claim
17 words
The solar battery of claim 1, wherein the material comprising the nucleation surface is ion-implanted silicon oxide.
Claim 8
Dependent Claim
16 words
The solar battery of claim 1, wherein the substrate is comprised of an amorphous insulating material.
Claim 9
Dependent Claim
14 words
The solar battery of claim 1, wherein the first semiconductor layer includes an electrode.
Claim 10
Dependent Claim
14 words
The solar battery of claim 1, wherein the second semiconductor layer includes an electrode.
Claim 11
Dependent Claim
155 words
A process for preparing a solar battery comprising: (a) forming a nucleation surface (S NDL ) on a small area of the surface of a substrate, said nucleation surface (S NDL ) being comprised of an amorphous material which is sufficiently greater in nucleation density (ND) than the material constituting the surface of said substrate and having a sufficiently small area so as to form only a single nucleus from which a first semiconductor layer of a first conductivity type including a single crystal is later grown, said nucleation surface positioned on said substrate so as to permit growth of said single crystal to a desired size; (b) applying crystal forming treatment to said substrate to form said single nucleus on the nucleation surface and growing said first semiconductor layer including said single crystal from the single nucleus; and (c) forming a second semiconductor layer of a second conductivity type on said first semiconductor layer.
Claim 12
Dependent Claim
155 words
A process for preparing a solar battery comprising: (a) forming a nucleation surface (S NDL ) on a small area of the surface of a substrate, said nucleation surface (S NDL ) being comprised of an amorphous material which is sufficiently greater in nucleation density (ND) than the material constituting the surface of said substrate and having a sufficiently small area so as to form only a single nucleus from which a first semiconductor layer of a first conductivity type including a single crystal is later grown, said nucleation surface positioned on said substrate so as to permit growth of said single crystal to a desired size; (b) applying crystal forming treatment to said substrate to form said single nucleus on the nucleation surface and growing said first semiconductor layer including said single crystal from the single nucleus; and (c) forming a second semiconductor layer of a second conductivity type on said first semiconductor layer.
Claim 13
Dependent Claim
42 words
The process according to claim 7, further comprising forming on said first semiconductor layer a third single crystalline semiconductor layer having an impurity concentration lower than that of said first semiconductor layer in advance of the formation of said second semiconductor layer.
Claim 14
Dependent Claim
30 words
The process according to claim 7, wherein a plural number of pairs of said first semiconductor layer and said second semiconductor layer are formed on the surface of said substrate.
Claim 15
Dependent Claim
15 words
The process of claim 7, wherein the crystal forming treatment is a vapor phase method.
Claim 16
Dependent Claim
16 words
The process of claim 7, wherein the crystal forming treatment is a chemical vapor deposition method.
Claim 17
Dependent Claim
15 words
The process of claim 7, wherein the crystal forming treatment is a vapor deposition method.
Claim 18
Dependent Claim
15 words
The process of claim 7, wherein the material comprising the nucleation surface is silicon nitride.
Claim 19
Dependent Claim
16 words
The process of claim 7, wherein the material comprising the nucleation surface is ion-implanted silicon oxide.
Claim 20
Dependent Claim
15 words
The process of claim 7, wherein the substrate is comprised of an amorphous insulating material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-10 | 1995-08-12 | 1996-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-10 | 1999-08-12 | 2000-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-10 | 2003-08-12 | 2004-02-11 | $7700.00 | Window Closed / Lapsed |