Patent US5100503A successfully refreshed from Google Patents.
US5100503A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silica-based anti-reflective planarizing layer
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
•
Filing: 1991-01-07
•
Granted: 1992-03-31
•
Expires: 2011-01-07
Abstract
Abstract There is disclosed a dyed, spin-on glass composition with a high carbon content for use in providing antireflective planarizing layers on substrates such as semiconductor silicon wafers. These layers can be used as hard masks by etching patterns therein. These hard masks can be used in multilayer resists and in making lithography masks. Methods for producing these hard-masks are also provided.
Inventors
- 👤 Derryl D. J. Allman
- 👤 Brian R. Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:45
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; G03F1/00; G03F1/38; G03F1/46; G03F1/68; G03F7/091; H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
48 words
A dyed spin-on glass composition comprising a solution of crosslinked polyorganosiloxane and a dye that is stable at temperatures of 350°-500° C. and absorbs light, said polyorganosiloxane having at least 30 atomic weight percent carbon and an aminoorganotrialkoxysilane incorporated therein, wherein the alkoxy groups have 1-4 carbon atoms.
Claim 2
Dependent Claim
48 words
A dyed spin-on glass composition comprising a solution of crosslinked polyorganosiloxane and a dye that is stable at temperatures of 350°-500° C. and absorbs light, said polyorganosiloxane having at least 30 atomic weight percent carbon and an aminoorganotrialkoxysilane incorporated therein, wherein the alkoxy groups have 1-4 carbon atoms.
Claim 3
Dependent Claim
45 words
A dyed spin-on glass composition comprising a solution of polymethylphenylsilsesquioxane and an inorganic dye that absorbs light, said polymethylphenylsilsesquioxane polymer having a carbon content of at least 30 weight percent and an aminoorganotrialkoxy silane incorporated therein, wherein the alkoxy groups have from 1-4 carbon atoms.
Claim 4
Dependent Claim
45 words
A dyed spin-on glass composition comprising a solution of polymethylphenylsilsesquioxane and an inorganic dye that absorbs light, said polymethylphenylsilsesquioxane polymer having a carbon content of at least 30 weight percent and an aminoorganotrialkoxy silane incorporated therein, wherein the alkoxy groups have from 1-4 carbon atoms.
Claim 5
Dependent Claim
32 words
A dyed spin-on glass composition as in claim 2, wherein the polymethylphenylsilsesquioxane has sufficient phenyl groups to provide a cured layer with an etch rate below 200 Å/min in CHF 3 .
Claim 6
Dependent Claim
38 words
A dyed spin-on glass composition as in claim 2, wherein the inorganic dye is TiO 2 , Cr 2 O 7 , MoO 4 , MnO 4 or ScO 4 , and the aminoorgano-trialkoxy silane is gamma-aminopropyltriethoxy silane.
Claim 7
Dependent Claim
18 words
A semiconductor device having an antireflective planar layer derived from a dyed spin-on glass composition of claim 1.
Claim 8
Dependent Claim
18 words
A semiconductor device as in claim 5, wherein said anti-reflective planar layer has a thickness above 500 Å.
Claim 9
Dependent Claim
45 words
A hard mask comprising an anti-reflective planar layer on a substrate, wherein the anti-reflective planar layer is derived from a dyed spin-on glass of claim 1, and wherein portions of said substrate are exposed between portions of said anti-reflective planar layer in a predetermined pattern.
Claim 10
Dependent Claim
29 words
A multilayer resist comprising a hard mask of claim 7 on a substrate and a layer of photoresist material positioned above said hard mask having substantially the same pattern.
Claim 11
Dependent Claim
38 words
A multilayer resist as in claim 8 which additionally comprises an intermediate layer positioned between the substrate and the hard mask, said intermediate layer having substantially the same pattern as the hard mask and layer of photoresist material.
Claim 12
Dependent Claim
14 words
A lithographic mask comprising a hard mask of claim 7 on a transparent substrate.
Claim 13
Dependent Claim
18 words
A hard mask as in claim 7, wherein the substrate is a conductive layer or an oxide layer.
Claim 14
Independent Claim
147 words
A method for producing a hard mask which comprises: a) depositing on a substrate, an anti-reflective planar, silica-based layer derived from a dyed spin-on glass composition, said dyed spin-on glass composition comprising a solution of crosslinked polyorganosiloxane and an inorganic dye that absorbs light, said polyorganosiloxane having at least 30 atomic weight percent carbon and an aminoorganotrialkoxysilane incorporated therein, wherein the alkoxy groups have 1-4 carbon atoms; b) depositing a substantially uniform layer of photoresist material on the silica-based layer; c) illuminating portions of said layer of photoresist with light in a predetermined pattern; d) developing the photoresist so as to remove portions differentiated by the illumination with light and expose portions of the underlying silica-based layer; and e) etching the exposed portions of the underlying silica-based layer so as to expose the underlying substrate in a pattern substantially identical to the illuminated portions of said photoresist.
Claim 15
Independent Claim
147 words
A method for producing a hard mask which comprises: a) depositing on a substrate, an anti-reflective planar, silica-based layer derived from a dyed spin-on glass composition, said dyed spin-on glass composition comprising a solution of crosslinked polyorganosiloxane and an inorganic dye that absorbs light, said polyorganosiloxane having at least 30 atomic weight percent carbon and an aminoorganotrialkoxysilane incorporated therein, wherein the alkoxy groups have 1-4 carbon atoms; b) depositing a substantially uniform layer of photoresist material on the silica-based layer; c) illuminating portions of said layer of photoresist with light in a predetermined pattern; d) developing the photoresist so as to remove portions differentiated by the illumination with light and expose portions of the underlying silica-based layer; and e) etching the exposed portions of the underlying silica-based layer so as to expose the underlying substrate in a pattern substantially identical to the illuminated portions of said photoresist.
Claim 16
Dependent Claim
36 words
A method as in claim 12, wherein the underlying substrate is a conductive layer and the inorganic dye is TiO 2 , Cr 2 O 7 , MoO 4 , MnO 4 or ScO 4 .
Claim 17
Dependent Claim
61 words
A method of patterning a conductive layer which comprises: (a) forming a hard mask on a conductive layer as in claim 13; (b) etching the exposed portions of conductive layer to define a pattern which substantially conforms to the pattern of the hard mask; and (c) etching the photoresist layer and hard mask so as to expose the underlying conductive layer.
Claim 18
Dependent Claim
20 words
A method as in claim 12, wherein the underlying substrate is an intermediate layer obtained from another spin-on glass composition.
References Cited (Backward Citations)
US4269935A
Cited
US4493886A
Cited
US4563241A
Cited
US4557797A
Cited
US4835089A
Cited
US4587138A
Cited
US4620986A
Cited
US4621042A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-31 | 1995-09-30 | 1996-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-31 | 1999-09-30 | 2000-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-31 | 2003-09-30 | 2004-03-31 | $7700.00 | Window Closed / Lapsed |