Patent US5108535A successfully refreshed from Google Patents.
US5108535A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dry etching apparatus
Assignee: Mitsubishi Electric Corp
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Filing: 1990-06-15
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Granted: 1992-04-28
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Expires: 2010-06-15
Abstract
Abstract A dry etching apparatus includes a discharge room in which a gas plasma is created by a discharge, an ejection nozzle for ejecting the plasma gas, a first vacuum room into which the plasma gas is introduced through the ejecting nozzle by supersonic expansion of the plasma gas, and a second vacuum room including a skimmer for extracting a supersonic molecular flow, the supersonic molecular flow of the plasma gas taken into the second vacuum room being blown against the material to be etched.
Inventors
- 👤 Kouichi Ono
- 👤 Tatsuo Oomori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:39
CPC Classifications
H; H05; H05H; H05H1/00; H05H1/24; H05H1/46
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
119 words
A dry etching apparatus for etching material comprising: a discharge room containing a discharge for generating a plasma gas by ionizing atoms and molecules of a first gas; a first vacuum room; an ejection nozzle connecting said discharge room to said first vacuum room for introducing and supersonically expanding said plasma gas from said discharge room into said first vacuum room; a second vacuum room; and a skimmer connecting said first and second vacuum rooms for extracting a supersonic molecular flow from said first vacuum room and introducing said supersonic molecular flow into said second vacuum room wherein said supersonic molecular flow of said plasma gas in said second vacuum room is blown against a material to be etched.
Claim 2
Dependent Claim
119 words
A dry etching apparatus for etching material comprising: a discharge room containing a discharge for generating a plasma gas by ionizing atoms and molecules of a first gas; a first vacuum room; an ejection nozzle connecting said discharge room to said first vacuum room for introducing and supersonically expanding said plasma gas from said discharge room into said first vacuum room; a second vacuum room; and a skimmer connecting said first and second vacuum rooms for extracting a supersonic molecular flow from said first vacuum room and introducing said supersonic molecular flow into said second vacuum room wherein said supersonic molecular flow of said plasma gas in said second vacuum room is blown against a material to be etched.
Claim 3
Dependent Claim
44 words
A dry etching apparatus as defined in claim 1 comprising means for removing ions and electrons from said supersonic molecular flow of said plasma gas flowing into said second vacuum room and for producing a supersonic molecular flow of neutral atomic and molecular gas.
Claim 4
Dependent Claim
59 words
A dry etching apparatus as defined in claim 1 wherein said ejection nozzle comprises a two-dimensional nozzle having a slit opening of rectangular cross-section for supersonically expanding said plasma gas generated in said discharge room and said skimmer comprises a two-dimensional skimmer having a slit opening of rectangular cross-section for extracting a supersonic molecular flow from said plasma gas.
Claim 5
Dependent Claim
44 words
A dry etching apparatus as defined in claim 3 including means for removing ions and electrons from said supersonic molecular flow of said plasma gas flowing into said second vacuum room and for producing a supersonic molecular flow of neutral atomic and molecular gas.
Claim 6
Dependent Claim
59 words
A dry etching apparatus as defined in claim 3 wherein said rectangular slit includes a long edge and a short edge including means for moving a substrate to be etched along a direction of the short edge during etching by said supersonic molecular flow, said molecular flow having a cross-sectional configuration perpendicular to said flow of said rectangular slit.
Claim 7
Dependent Claim
59 words
A dry etching apparatus as defined in claim 4 wherein said rectangular slit includes a long edge and a short edge including means for moving a substrate to be etched along a direction of the short edge during etching by said supersonic molecular flow, said molecular flow having a cross-sectional configuration perpendicular to said flow of said rectangular slit.
Claim 8
Dependent Claim
25 words
A dry etching apparatus as defined in claim 1 wherein said first gas includes a mixture of a reactive gas and relatively light elemental gas.
Claim 9
Dependent Claim
25 words
A dry etching apparatus as defined in claim 3 wherein said first gas includes a mixture of a reactive gas and relatively light elemental gas.
Claim 10
Dependent Claim
25 words
A dry etching apparatus as defined in claim 5 wherein said first gas includes a mixture of a reactive gas and relatively light elemental gas.
Claim 11
Dependent Claim
44 words
A dry etching apparatus as defined in claim 7 including means for removing ions and electrons from said supersonic molecular flow of said plasma gas flowing into said second vacuum room and for producing a supersonic molecular flow of neutral atomic and molecular gas.
Claim 12
Dependent Claim
44 words
A dry etching apparatus as defined in claim 8 including means for removing ions and electrons from said supersonic molecular flow of said plasma gas flowing into said second vacuum room and for producing a supersonic molecular flow of neutral atomic and molecular gas.
Claim 13
Dependent Claim
44 words
A dry etching apparatus as defined in claim 9 including means for removing ions and electrons from said supersonic molecular flow of said plasma gas flowing into said second vacuum room and for producing a supersonic molecular flow of neutral atomic and molecular gas.
Claim 14
Dependent Claim
44 words
A dry etching apparatus as defined in claim 7 wherein said discharge room is divided into a first room in which the relatively light elemental gas is ionized and a second room in which the reactive gas and relatively light element gas are mixed.
Claim 15
Dependent Claim
44 words
A dry etching apparatus as defined in claim 8 wherein said discharge room is divided into a first room in which the relatively light elemental gas is ionized and a second room in which the reactive gas and relatively light element gas are mixed.
Claim 16
Dependent Claim
44 words
A dry etching apparatus as defined in claim 9 wherein said discharge room is divided into a first room in which the relatively light elemental gas is ionized and a second room in which the reactive gas and relatively light element gas are mixed.
Claim 17
Dependent Claim
44 words
A dry etching apparatus as defined in claim 10 wherein said discharge room is divided into a first room in which the relatively light elemental gas is ionized and a second room in which the reactive gas and relatively light elemental gas are mixed.
Claim 18
Dependent Claim
44 words
A dry etching apparatus as defined in claim 11 wherein said discharge room is divided into a first room in which the relatively light elemental gas is ionized and a second room in which the reactive gas and relatively light elemental gas are mixed.
Claim 19
Dependent Claim
44 words
A dry etching apparatus as defined in claim 12 wherein said discharge room is divided into a first room in which the relatively light elemental gas is ionized and a second room in which the reactive gas and relatively light elemental gas are mixed.
References Cited (Backward Citations)
EP0026337A2
Cited
EP0388800A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-28 | 1995-10-28 | 1996-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-28 | 1999-10-28 | 2000-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-28 | 2003-10-28 | 2004-04-28 | $7700.00 | Window Closed / Lapsed |