Patent US5139591A successfully refreshed from Google Patents.
US5139591A
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Laser deposition of crystalline boron nitride films
Assignee: Motors Liquidation Co
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Filing: 1991-06-26
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Granted: 1992-08-18
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Expires: 2011-06-26
Abstract
Abstract Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.
Inventors
- 👤 Gary L. Doll
- 👤 Jeffrey A. Sell
- 👤 Charles A. Peck
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/40; C30B29/403; H10P14/6349; H10P14/68
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
100 words
A method of forming thin films of cubic boron nitride comprising the following steps: providing a a single-crystal silicon substrate orientated throughout along its (100) crystallographic axis; providing a hexagonally orientated boron nitride target, said target being disposed in proximity with said appropriate substrate material; inducing vaporization of said target using a pulsed excimer laser to disassociate and vaporize said target, such that the vaporized material deposits onto a surface of said substrate to form a thin film layer of cubic boron nitride on said surface, said thin film layer of cubic boron nitride being crystallographically aligned with said substrate.
Claim 2
Independent Claim
100 words
A method of forming thin films of cubic boron nitride comprising the following steps: providing a a single-crystal silicon substrate orientated throughout along its (100) crystallographic axis; providing a hexagonally orientated boron nitride target, said target being disposed in proximity with said appropriate substrate material; inducing vaporization of said target using a pulsed excimer laser to disassociate and vaporize said target, such that the vaporized material deposits onto a surface of said substrate to form a thin film layer of cubic boron nitride on said surface, said thin film layer of cubic boron nitride being crystallographically aligned with said substrate.
Claim 3
Independent Claim
100 words
A method of forming thin films of cubic boron nitride comprising the following steps: providing a silicon substrate oriented along the (100) cyrstallographic axis; providing a hexagonally orientated boron nitride target, said boron nitride target being disposed in proximity with said silicon substrate; inducing vaporization of said boron nitride target using wave energy sufficient to disassociate and vaporize said target, such that the vaporized material deposits onto a surface of said substrate to form a thin film layer of cubic boron nitride on said surface, said thin film layer of cubic boron nitride being crystallographically aligned with said silicon substrate.
Claim 4
Independent Claim
100 words
A method of forming thin films of cubic boron nitride comprising the following steps: providing a silicon substrate oriented along the (100) cyrstallographic axis; providing a hexagonally orientated boron nitride target, said boron nitride target being disposed in proximity with said silicon substrate; inducing vaporization of said boron nitride target using wave energy sufficient to disassociate and vaporize said target, such that the vaporized material deposits onto a surface of said substrate to form a thin film layer of cubic boron nitride on said surface, said thin film layer of cubic boron nitride being crystallographically aligned with said silicon substrate.
Claim 5
Independent Claim
47 words
A method for forming thin films of boron nitride on a silicon substrate comprising the steps of: vaporizing a hexagonally oriented pyrolitic boron nitride target to deposit a thin film of cubic boron nitride on a silicon substrate oriented along the (100) cystallographic axis of the substrate.
Claim 6
Independent Claim
47 words
A method for forming thin films of boron nitride on a silicon substrate comprising the steps of: vaporizing a hexagonally oriented pyrolitic boron nitride target to deposit a thin film of cubic boron nitride on a silicon substrate oriented along the (100) cystallographic axis of the substrate.
Claim 7
Dependent Claim
55 words
A process of forming thin films of boron nitride on a silicon substrate comprising the steps of: directing a laser beam onto a hexagonally oriented pyrolitic boron nitride target to vaporize portions of said target and to deposit a thin film of cubic boron nitride on a silicon substrate oriented along its (100) crystallographic axis.
Claim 8
Dependent Claim
55 words
A process of forming thin films of boron nitride on a silicon substrate comprising the steps of: directing a laser beam onto a hexagonally oriented pyrolitic boron nitride target to vaporize portions of said target and to deposit a thin film of cubic boron nitride on a silicon substrate oriented along its (100) crystallographic axis.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-18 | 1996-02-17 | 1996-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-18 | 2000-02-17 | 2000-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-18 | 2004-02-17 | 2004-08-18 | $7700.00 | Window Closed / Lapsed |