Patent US5164810A successfully refreshed from Google Patents.
US5164810A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Cubic boron nitride bipolar transistor
Assignee: Delphi Technologies Inc
•
Filing: 1991-05-22
•
Granted: 1992-11-17
•
Expires: 2011-05-22
Abstract
Abstract A bipolar transistor is formed from epitaxial cubic boron nitride grown on a silicon substrate which is a three to two commensurate layer deposited by pulsed laser evaporation techniques. The thin film, cubic boron nitride bipolar transistor is in epitaxial registry with an underlying single crystal silicon substrate. The bipolar transistor is particularly suitable for high temperature applications.
Inventors
- 👤 Gary L. Doll
- 👤 Larry E. Henneman, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/40; C30B29/403; H10P14/6349; H10P14/68
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
103 words
A bipolar transistor comprising: a silicon substrate crystallographically oriented along the [100] crystallographic plane; an overlaying, appropriately doped collector region of cubic boron nitride in crystallographic registry with said silicon substrate; an appropriately doped, cubic boron nitride, base region overlaying said collector region, said base region being in epitaxial registry with said collector region; an appropriately doped, cubic boron nitride, emitter region overlaying said base region, said emitter region being in epitaxial registry with said base region; and electrical contacts to said collector region, said base region and said emitter region, such that a bipolar transistor useful for high temperature applications is provided.
Claim 2
Dependent Claim
103 words
A bipolar transistor comprising: a silicon substrate crystallographically oriented along the [100] crystallographic plane; an overlaying, appropriately doped collector region of cubic boron nitride in crystallographic registry with said silicon substrate; an appropriately doped, cubic boron nitride, base region overlaying said collector region, said base region being in epitaxial registry with said collector region; an appropriately doped, cubic boron nitride, emitter region overlaying said base region, said emitter region being in epitaxial registry with said base region; and electrical contacts to said collector region, said base region and said emitter region, such that a bipolar transistor useful for high temperature applications is provided.
Claim 3
Dependent Claim
44 words
A bipolar transistor as recited in claim 1 wherein said collector region and said emitter region are doped so as to be electrically n-type and said base region is doped so s to be electrically p-type, effective to provide a n-p-n type bipolar transistor.
Claim 4
Dependent Claim
44 words
A bipolar transistor as recited in claim 1 wherein said collector region and said emitter region are doped so as to be electrically p-type and said base region is doped so as to be electrically n-type, effective to provide a p-n-p type bipolar transistor.
Claim 5
Dependent Claim
111 words
A bipolar transistor comprising: an electrically conductive n+type silicon substrate crystallographically oriented along the [100] crystallographic plane; an overlaying, electrically conductive n-type collector region of cubic boron nitride in crystallographic registry with said silicon substrate; an electrically conductive p-type base region of cubic boron nitride overlaying said collector region, said base region being in epitaxial registry with said collector region; an electrically conductive n-type emitter region of cubic boron nitride overlaying said base region, said emitter region being in epitaxial registry with said base region; and electrical contacts to said collector region, said base region and said emitter region, such that a bipolar transistor useful for high temperature applications is provided.
Claim 6
Dependent Claim
111 words
A bipolar transistor comprising: an electrically conductive n+type silicon substrate crystallographically oriented along the [100] crystallographic plane; an overlaying, electrically conductive n-type collector region of cubic boron nitride in crystallographic registry with said silicon substrate; an electrically conductive p-type base region of cubic boron nitride overlaying said collector region, said base region being in epitaxial registry with said collector region; an electrically conductive n-type emitter region of cubic boron nitride overlaying said base region, said emitter region being in epitaxial registry with said base region; and electrical contacts to said collector region, said base region and said emitter region, such that a bipolar transistor useful for high temperature applications is provided.
Claim 7
Dependent Claim
108 words
A bipolar transistor comprising: a silicon substrate crystallographically oriented along the [100] crytallographic plane; an overlaying electrically conductive p-type collector region of cubic boron nitride in crystallographic registry with said silicon substrate; an electrically conductive n-type base region of cubic boron nitride overlaying said collector region, said base region being in epitaxial registry with said collector region; an electrically conductive p-type emitter region of cubic boron nitride overlaying said base region, said emitter region being in epitaxial registry with said base region; and electrical contacts to said silicon substrate; said base region and said emitter region, such that a bipolar transistor useful for high temperature applications is provided.
Claim 8
Dependent Claim
108 words
A bipolar transistor comprising: a silicon substrate crystallographically oriented along the [100] crytallographic plane; an overlaying electrically conductive p-type collector region of cubic boron nitride in crystallographic registry with said silicon substrate; an electrically conductive n-type base region of cubic boron nitride overlaying said collector region, said base region being in epitaxial registry with said collector region; an electrically conductive p-type emitter region of cubic boron nitride overlaying said base region, said emitter region being in epitaxial registry with said base region; and electrical contacts to said silicon substrate; said base region and said emitter region, such that a bipolar transistor useful for high temperature applications is provided.
References Cited (Backward Citations)
US4980730A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-17 | 1996-05-18 | 1996-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-17 | 2000-05-18 | 2000-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-17 | 2004-05-18 | 2004-11-17 | $7700.00 | Window Closed / Lapsed |