Patent US5175017A successfully refreshed from Google Patents.
US5175017A
Expired / Lapsed
US
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Method of forming metal or metal silicide film
Assignee: Hitachi Ltd
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Filing: 1991-01-28
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Granted: 1992-12-29
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Expires: 2011-01-28
Abstract
Abstract In forming a metal or metal silicide film by CVD, a fluorosilane is used as a reaction gas, or a fluoro-silane is added to a source gas. Examples of the metal halide used in the present invention include fluorides and chlorides of tungsten, molybdenum, titanium, tantalum and niobium. Among them, fluorides of tungsten and molybdenum are more desirable particularly from the viewpoint of the availability of the deposited metal or metal silicide. It is preferred that the source gases, i.e. silane series gas and metal halide, be diluted with a carrier gas such as nitrogen, hydrogen, helium or argon, and this is also true of the fluoro-silane. The total pressure is preferably 0.01 to 10 Torr. The reaction temperature is desirably 200 DEG to 800 DEG C., more desirably 300 DEG to 500 DEG C. Plasma CVD instead of thermal CVD may be employed for the purpose of lowering the reaction temperature.
Inventors
- 👤 Nobuyoshi Kobayashi
- 👤 Hidekazu Goto
- 👤 Masayuki Suzuki
- 👤 Yoshio Homma
- 👤 Natsuki Yokoyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/042; H10W20/045; C; C23; C23C; C23C16/00; C23C16/06; C23C16/08; C23C16/14; C23C16/22; C23C16/30; C23C16/42; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10W20/033; H10W20/056
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
68 words
A method of electronic device manufacturing, comprising the steps of: forming an insulating film on a surface of a semiconductor substrate; conducting blanket chemical vapor deposition (CVD) for depositing at least one or more of a metal and metallic compound on substantially the whole of the surface through the use of a source gas, and supplying the source gas as at least a metal halide and one fluoro-silane.
Claim 2
Independent Claim
68 words
A method of electronic device manufacturing, comprising the steps of: forming an insulating film on a surface of a semiconductor substrate; conducting blanket chemical vapor deposition (CVD) for depositing at least one or more of a metal and metallic compound on substantially the whole of the surface through the use of a source gas, and supplying the source gas as at least a metal halide and one fluoro-silane.
Claim 3
Dependent Claim
16 words
A method according to claim 1, wherein the fluoro-silane is difluoro-silane (SiH 2 F 2 ).
Claim 4
Dependent Claim
36 words
A method according to claim 1, further comprising the step of forming a hole in said insulating film prior to said steps of conducting and depositing so that said depositing at least partly fills the hole.
Claim 5
Dependent Claim
30 words
A method according to claim 1, wherein said supplying supplies the fluoro-silane as one of SiH 3 F, SiH 2 F 2 , SiHF 3 , and SiF 4 .
Claim 6
Dependent Claim
20 words
A method according to claim 4, including controlling selectivity by controlling the addition of SiF 4 in the source gas.
Claim 7
Dependent Claim
22 words
A method according to claim 1, wherein said conducting blanket CVD is at a reaction temperature of 300° C. to 800° C.
Claim 8
Dependent Claim
13 words
A method according to claim 1, wherein the fluoro-silane is SiHF 3 .
Claim 9
Dependent Claim
13 words
A method according to claim 1, wherein the fluoro-silane is SiH 3 F.
Claim 10
Dependent Claim
13 words
A method according to claim 1, wherein the fluoro-silane is SiF 4 .
Claim 11
Dependent Claim
15 words
A method according to claim 1, including diluting the source gas with a carrier gas.
Claim 12
Dependent Claim
17 words
The method of claim 10, wherein said carrier gas is one of nitrogen, hydrogen, helium, and argon.
Claim 13
Dependent Claim
22 words
A method according to claim 1, wherein said conducting blanket CVD is at a reaction temperature of 200° C. to 800° C.
Claim 14
Dependent Claim
13 words
A method according to claim 12, wherein the depositing deposits a metal silicide.
Claim 15
Dependent Claim
19 words
A method according to claim 1, including forming a conductive adhesion layer on the substrate prior to said conducting.
Claim 16
Dependent Claim
18 words
A method according to claim 1, including forming a barrier layer on the substrate prior to said conducting.
Claim 17
Dependent Claim
14 words
A method according to claim 1, including monitoring the metal halide during said conducting.
Claim 18
Dependent Claim
13 words
A method according to claim 16, wherein the monitoring is with infrared spectroscopy.
Claim 19
Dependent Claim
13 words
A method according to claim 1, including monitoring the fluoro-silane during said conducting.
Claim 20
Dependent Claim
13 words
A method according to claim 18, wherein the monitoring is with infrared spectroscopy.
Claim 21
Dependent Claim
18 words
A method according to claim 1, wherein the source gas includes a reactive gas other than the fluoro-silane.
Claim 22
Dependent Claim
14 words
A method according to claim 1, wherein said conducting and depositing deposits a metal.
Claim 23
Dependent Claim
17 words
A method according to claim 1, wherein said depositing and conducting blanket CVD deposit a metal silicide.
Claim 24
Dependent Claim
36 words
The method of claim 1, wherein said steps of conducting and depositing are conducted within a total pressure within the range of 0.01 to 10 Torr, and conducted with a reaction temperature range of 200°-800° C.
Claim 25
Dependent Claim
19 words
A method according to claim 23, wherein the source gas includes a fluoride of the metal to be deposited.
Claim 26
Dependent Claim
13 words
The method of claim 1, wherein said step of conducting comprises plasma CVD.
Claim 27
Dependent Claim
13 words
The method of claim 1, wherein said step of conducting comprises thermal CVD.
Claim 28
Dependent Claim
40 words
The method of claim 1, wherein said conducting and depositing deposits a metal silicide, uses a source gas of SiH 2 F 2 and WF 6 , and controls the ratio of these gases for the deposition of tungsten silicide.
Claim 29
Dependent Claim
19 words
A method according to claim 1, wherein the source gas includes a fluoride of the metal to be deposited.
Claim 30
Dependent Claim
15 words
A method according to claim 1, wherein said supplying supplies metal halide as tungsten hexafloride.
Claim 31
Dependent Claim
15 words
A method according to claim 1, wherein said supplying supplies metal halide as molybdenum hexafloride.
Claim 32
Dependent Claim
59 words
A method according to claim 1, further comprising the step of forming a hole in said insulating film prior to said steps of conducting and depositing so that said depositing at least partly fills the hole, and the step of forming a conductive adhesion layer in the hole after said forming a hole and before said conducting blanket CVD.
Claim 33
Dependent Claim
18 words
A method according to claim 31, wherein said conductive adhesion layer is one of TiW, TiN or W.
Claim 34
Independent Claim
79 words
A method of electronic device manufacturing, comprising the steps of: forming a hole in an insulating film on a surface of a semiconductor substrate; conducting selective chemical vapor deposition (CVD) for depositing a metal within the hole of the insulating film through the use of a source gas; supplying the source gas as at least a metal halide and one fluoro-silane; and wherein said conducting selective CVD is conducted at a reaction temperature of 300° C. to 500° C.
Claim 35
Independent Claim
79 words
A method of electronic device manufacturing, comprising the steps of: forming a hole in an insulating film on a surface of a semiconductor substrate; conducting selective chemical vapor deposition (CVD) for depositing a metal within the hole of the insulating film through the use of a source gas; supplying the source gas as at least a metal halide and one fluoro-silane; and wherein said conducting selective CVD is conducted at a reaction temperature of 300° C. to 500° C.
Claim 36
Dependent Claim
45 words
A method according to claim 33, wherein said steps of conducting and depositing include metal fluoride in the source gas, are conducted with a total pressure within the range of 0.01 to 10 Torr, and are conducted within a reaction temperature range of 200°-800° C.
Claim 37
Dependent Claim
37 words
A method according to claim 33, wherein the semiconductor substrate has exposed on the surface thereof an insulating film and a silicon area, and said conducting and depositing forms a metal film selectively on the silicon area.
Claim 38
Dependent Claim
35 words
A method according to claim 33, wherein the semiconductor substrate has exposed on the surface thereof, a silicon-containing conductive area and said conducting and depositing forms a metal film selectively on the silicon-containing conductive area.
Claim 39
Dependent Claim
33 words
A method according to claim 33, wherein the semiconductor substrate has exposed on the surface thereof, a metal area and said conducting and depositing forms a metal film selectively on the metal area.
Claim 40
Dependent Claim
19 words
The method of claim 33, including controlling selectively by controlling the addition of SiF 4 in the source gas.
Claim 41
Dependent Claim
26 words
A method according to claim 33, wherein the fluorosilane is one of SiH 3 F, SiH 2 F 2 , SiHF 3 and SiF 4 .
Claim 42
Dependent Claim
15 words
A method according to claim 33, including diluting the source gas with a carrier gas.
Claim 43
Dependent Claim
13 words
A method according to claim 33, wherein the metal halide is tungsten hexafloride.
Claim 44
Dependent Claim
13 words
A method according to claim 33, wherein the metal halide is molybdenum hexafloride.
Claim 45
Dependent Claim
22 words
A method according to claim 33, wherein said conducting blanket CVD is at a reaction temperature of 200° C. to 800° C.
Claim 46
Dependent Claim
59 words
A method according to claim 33, further comprising the step of forming a hole in said insulating film prior to said steps of conducting and depositing so that said depositing at least partly fills the hole, and the step of forming a conductive adhesion layer in the hole after said forming a hole and before said conducting selective CVD.
Claim 47
Dependent Claim
18 words
A method according to claim 44, wherein said conductive adhesion layer is one of TiW, TiN or W.
Claim 48
Independent Claim
64 words
A method of electronic device manufacturing, comprising the steps of: forming a hole in an insulating film on a surface of a semiconductor substrate; thereafter conducting selective chemical vapor deposition (CVD) for depositing metal within the hole of the insulating film through the use of a source gas; and supplying the source gas as at least a metal halide, SiH 4 and one fluoro-silane.
Claim 49
Independent Claim
64 words
A method of electronic device manufacturing, comprising the steps of: forming a hole in an insulating film on a surface of a semiconductor substrate; thereafter conducting selective chemical vapor deposition (CVD) for depositing metal within the hole of the insulating film through the use of a source gas; and supplying the source gas as at least a metal halide, SiH 4 and one fluoro-silane.
Claim 50
Dependent Claim
21 words
A method according to claim 46, including controlling selectivety by controlling the addition of the SiF 4 in the source gas.
Claim 51
Dependent Claim
23 words
A method according to claim 46, wherein said conducting selective CVD is conducted at a reaction temperature of 200° C. to 800° C.
Claim 52
Dependent Claim
13 words
A method according to claim 48, wherein the metal halide is tungsten hexafluoride.
Claim 53
Dependent Claim
13 words
A method according to claim 48, wherein the metal halide is molybdenum hexafluoride.
Claim 54
Dependent Claim
23 words
A method according to claim 46, wherein said conducting selective CVD is conducted at a reaction temperature of 300° C. to 500° C.
Claim 55
Dependent Claim
27 words
A method according to claim 46, wherein said fluoro-silane is one of SiH 3 F, SiH 2 F 2 , SiHF 3 , and SiF 4 .
Claim 56
Dependent Claim
15 words
A method according to claim 46, including diluting the source gas with a carrier gas.
Claim 57
Dependent Claim
13 words
A method according to claim 46, wherein the metal halide is tungsten hexafloride.
Claim 58
Dependent Claim
13 words
A method according to claim 46, wherein the metal halide is molybdenum hexafloride.
Claim 59
Dependent Claim
50 words
A method according to claim 46, further comprising the step of forming a hole in said insulating film prior to said steps of conducting and depositing so that said depositing at least partly fills the hole, and the step of forming a conductive adhesion layer in the hole after said
Claim 60
Dependent Claim
18 words
A method according to claim 56, wherein said conductive adhesion layer is one of TiW, TiN or W.
References Cited (Backward Citations)
US3697343A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-29 | 1996-06-29 | 1996-12-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-29 | 2000-06-29 | 2000-12-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-29 | 2004-06-29 | 2004-12-29 | $7700.00 | Window Closed / Lapsed |