Patent US5182425A successfully refreshed from Google Patents.
US5182425A
Expired / Lapsed
US
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Thick metal microwave susceptor
Assignee: Pillsbury Co
•
Filing: 1990-11-06
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Granted: 1993-01-26
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Expires: 2010-11-06
Abstract
Abstract A microwave susceptor structure includes a first thick metal layer, and a second matching layer coupled to the thick metal layer. The matching layer is chosen to couple a desired amount of power into the thick metal layer.
Inventors
- 👤 Peter S. Pesheck
- 👤 Ronald R. Lentz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:31
CPC Classifications
A; A23; A23B; A23B2/00; A23B2/05; A23B2/08; B; B65; B65D; B65D81/00; B65D81/34; B65D81/3446; B65D2581/00; B65D2581/34; B65D2581/3437; B65D2581/3439; B65D2581/344; B65D2581/3441; B65D2581/3471; B65D2581/3472; B65D2581/3483; B65D2581/3486; B65D2581/3487; Y; Y10; Y10S; Y10S99/00; Y10S99/14
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
76 words
An apparatus for converting microwave energy in a microwave oven into thermal energy, the microwave energy being conveyed by microwaves having a wave impedance, the apparatus comprising: a thick metal having a thickness of at least approximately three skin depths; and matching means, coupled to the thick metal, for matching a first impedance corresponding to the thick metal with the wave impedance sufficiently that the thick metal accordingly absorbs a controlled amount of incident microwave energy.
Claim 2
Independent Claim
76 words
An apparatus for converting microwave energy in a microwave oven into thermal energy, the microwave energy being conveyed by microwaves having a wave impedance, the apparatus comprising: a thick metal having a thickness of at least approximately three skin depths; and matching means, coupled to the thick metal, for matching a first impedance corresponding to the thick metal with the wave impedance sufficiently that the thick metal accordingly absorbs a controlled amount of incident microwave energy.
Claim 3
Dependent Claim
13 words
The apparatus of claim 1 wherein the matching means comprises: a dielectric material.
Claim 4
Dependent Claim
25 words
The apparatus of claim 2 wherein the thick metal comprises: a generally planar thick metal layer having a generally planar surface and an electrical conductivity.
Claim 5
Dependent Claim
59 words
The apparatus of claim 3 wherein the dielectric material comprises: a generally planar dielectric material having a generally planar surface, a dielectric constant and a thickness, and being coupled to the generally planar thick metal so that the generally planar surface of the thick metal layer is adjacent to, and faces the generally planar surface of the dielectric material.
Claim 6
Dependent Claim
41 words
The apparatus of claim 4 wherein the electrical conductivity of the thick metal, the dielectric constant and the thickness of the dielectric material have values sufficient to cause the controlled amount of microwave energy to be absorbed by the thick metal.
Claim 7
Dependent Claim
26 words
The apparatus of claim 3 wherein the dielectric material has a relative dielectric constant with a real part in a range of approximately 500 to 2000.
Claim 8
Dependent Claim
22 words
The apparatus of claim 3 wherein the dielectric material has a thickness in a range of approximately 0.010 cm to 0.20 cm.
Claim 9
Dependent Claim
12 words
The apparatus of claim 3 wherein the dielectric material comprises: Barium Titanate.
Claim 10
Dependent Claim
12 words
The apparatus of claim 3 wherein the dielectric material comprises: Calcium Titanate.
Claim 11
Dependent Claim
15 words
The apparatus of claim 3 wherein the dielectric material comprises: a metal flake artificial dielectric.
Claim 12
Dependent Claim
56 words
The apparatus of claim 1 wherein the matching means comprises: temperature dependent matching means for matching the first impedance with the wave impedance until the thick metal has a temperature which reaches a threshold level, and for mismatching the first impedance and the wave impedance when the temperature of the thick metal exceeds the threshold level.
Claim 13
Dependent Claim
24 words
The apparatus of claim 11 wherein the temperature dependent matching means comprises: a dielectric material having a relative dielectric constant which is temperature dependent.
Claim 14
Dependent Claim
25 words
The apparatus of claim 1 wherein the thick metal has an electrical conductivity in a range of approximately 10 3 /ohm-cm to 10 6 /ohm-cm.
Claim 15
Dependent Claim
72 words
A microwave susceptor suitable for use in a microwave oven, the microwave oven being capable of generating microwaves and transmitting microwave energy having a wave impedance, the microwave susceptor comprising: a thick metal having a thickness of at least approximately three skin depths; and matching means, coupled to the thick metal, for impedance matching incident microwave energy into the thick metal to couple a controlled amount of power into the thick metal.
Claim 16
Dependent Claim
72 words
A microwave susceptor suitable for use in a microwave oven, the microwave oven being capable of generating microwaves and transmitting microwave energy having a wave impedance, the microwave susceptor comprising: a thick metal having a thickness of at least approximately three skin depths; and matching means, coupled to the thick metal, for impedance matching incident microwave energy into the thick metal to couple a controlled amount of power into the thick metal.
Claim 17
Dependent Claim
48 words
The microwave susceptor of claim 14 wherein the matching means comprises: a dielectric material, coupled to the thick metal, having a dielectric impedance value, the dielectric impedance value chosen so that the susceptor structure absorbs the controlled amount of the incident microwave energy transmitted by the microwave oven.
Claim 18
Dependent Claim
16 words
A microwave susceptor of claim 15 wherein the dielectric material is a generally planar dielectric material.
Claim 19
Dependent Claim
21 words
The microwave susceptor of claim 16 wherein the thick metal is a generally planar thick metal layer having an electrical conductivity.
Claim 20
Dependent Claim
53 words
The microwave susceptor of claim 17 wherein the dielectric material has a dielectric constant and a thickness, and wherein the electrical conductivity of the thick metal, the dielectric constant and the thickness of the dielectric material have values sufficient to cause a controlled amount of power to be absorbed by the thick metal.
Claim 21
Dependent Claim
27 words
The microwave susceptor of claim 15 wherein the dielectric material has a relative dielectric constant with a real part in a range of approximately 500 to 2000.
Claim 22
Dependent Claim
23 words
The microwave susceptor of claim 15 wherein the dielectric material has a thickness in a range of approximately 0.010 cm to 0.20 cm.
Claim 23
Dependent Claim
12 words
The apparatus of claim 15 wherein the dielectric material comprises: barium Titanate.
Claim 24
Dependent Claim
12 words
The apparatus of claim 15 wherein the dielectric material comprises: calcium titanate.
Claim 25
Dependent Claim
15 words
The apparatus of claim 15 wherein the dielectric material comprises: a metal flake artificial dielectric.
Claim 26
Dependent Claim
66 words
The microwave susceptor of claim 14 wherein the matching means comprises: temperature dependent matching means for impedance matching incident microwave energy into the thick metal until the amount of power coupled into the thick metal causes the temperature of the thick metal to reach a threshold level, and for impedance mismatching the incident microwave energy when the temperature of the thick metal exceeds the threshold level.
Claim 27
Dependent Claim
25 words
The microwave susceptor of claim 20 wherein the temperature dependent matching means comprises: a dielectric material having a relative dielectric constant which is temperature dependent.
Claim 28
Dependent Claim
26 words
The microwave susceptor of claim 14 wherein the thick metal has an electrical conductivity in a range of approximately 10 3 /ohms-cm to 10 6 /ohms-cms.
Claim 29
Dependent Claim
88 words
A microwave susceptor structure, comprising: an electrically thick metal layer having a thickness of at least approximately three skin depths; and a dielectric layer, coupled to the electrically thick metal layer, the dielectric layer having an impedance that sufficiently matches a first impedance corresponding to the electrically thick metal layer to a wave impedance corresponding to a microwave having a frequency in a range of 2300 to 2600 Megahertz so that a controlled amount of power transmitted by the microwave is coupled into the electrically thick metal layer.
Claim 30
Dependent Claim
88 words
A microwave susceptor structure, comprising: an electrically thick metal layer having a thickness of at least approximately three skin depths; and a dielectric layer, coupled to the electrically thick metal layer, the dielectric layer having an impedance that sufficiently matches a first impedance corresponding to the electrically thick metal layer to a wave impedance corresponding to a microwave having a frequency in a range of 2300 to 2600 Megahertz so that a controlled amount of power transmitted by the microwave is coupled into the electrically thick metal layer.
Claim 31
Dependent Claim
80 words
The microwave susceptor structure of claim 27 wherein the electrically thick metal layer has a conductivity and wherein the dielectric layer has a thickness and a relative dielectric constant with a real portion, and wherein the conductivity of the thick metal layer, the thickness of the dielectric layer, and the real portion of the relative dielectric constant have values sufficient to cause the controlled amount of power transmitted by the microwaves to be coupled into the electrically thick metal layer.
Claim 32
Dependent Claim
28 words
The microwave susceptor structure of claim 28 wherein the real portion of the relative dielectric constant has a value that varies as temperature of the dielectric layer varies.
Claim 33
Dependent Claim
31 words
The microwave susceptor structure of claim 28 wherein the conductivity of the electrically thick metal layer is in a range of approximately 10 3 per ohms-cm to 10 6 per ohms-cm.
Claim 34
Dependent Claim
25 words
The microwave susceptor structure of claim 29 wherein the thickness of the dielectric layer is in a range of approximately 0.010 cm to 0.20 cm.
Claim 35
Dependent Claim
28 words
The microwave susceptor structure of claim 27 wherein the dielectric material has a relative dielectric constant with a real part in a range of approximately 500 to 2000.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-01-26 | 1996-07-27 | 1997-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-01-26 | 2000-07-27 | 2001-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-01-26 | 2004-07-27 | 2005-01-26 | $7700.00 | Window Closed / Lapsed |