US5183972A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Copper/epoxy structures
Assignee: Microelectronics and Computer Technology Corp
•
Filing: 1991-02-04
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Granted: 1993-02-02
•
Expires: 2011-02-04
Abstract
Abstract A high density, high performance circuit fabricated with a copper/epoxy structure. The circuit is well suited for an integrated circuit interconnect device. Fluorene-containing epoxy resins may be used to obtain certain material and processing advantages over copper/polyimide structures. The circuit structure resides on a substrate which may be ceramic, a semiconductor such as silicon, or, advantageously, a cured epoxy resin.
Inventors
- 👤 Diana C. Duane
- 👤 Eric L. Zilley
- 👤 Robert C. Jordan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:45
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H05; H05K; H05K3/00; H05K3/46; H05K3/4644; H05K3/4647; H05K3/4682; H10W70/611; H10W70/67; H10W70/68; H10W70/685; H10W70/69; H10W70/695; H05K2201/00; H05K2201/02; H05K2201/0203; H05K2201/0242; H05K2201/0254; H05K2201/09; H05K2201/09209; H05K2201/095; H05K2201/096; H05K2203/00; H05K2203/07; H05K2203/0703; H05K2203/0733; H05K3/10; H05K3/108; H05K3/20; H05K3/205; H05K3/22; H05K3/24; H05K3/243; H05K3/38; H05K3/388
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
85 words
A multilayer circuit comprising: a substrate; a first cured epoxy resin dielectric layer on said substrate wherein the thermal coefficient of expansion of said first cured epoxy resin dielectric layer and said substrate are matched; at least two high density circuit pattern layers located above said first cured epoxy resin dielectric layer wherein said circuit pattern layers exhibit a conductor line density of greater than 300 lines per inch per level; and a second cured epoxy resin dielectric layer located between said circuit pattern layers.
Claim 2
Dependent Claim
85 words
A multilayer circuit comprising: a substrate; a first cured epoxy resin dielectric layer on said substrate wherein the thermal coefficient of expansion of said first cured epoxy resin dielectric layer and said substrate are matched; at least two high density circuit pattern layers located above said first cured epoxy resin dielectric layer wherein said circuit pattern layers exhibit a conductor line density of greater than 300 lines per inch per level; and a second cured epoxy resin dielectric layer located between said circuit pattern layers.
Claim 3
Dependent Claim
14 words
A circuit according to claim 1 wherein said circuit pattern layers are copper layers.
Claim 4
Dependent Claim
36 words
A circuit according to claim 1, further comprising a circuit power layer located above said circuit pattern layers; and an additional cured epoxy resin dielectric layer separating said circuit power layer from said circuit pattern layers.
Claim 5
Dependent Claim
26 words
A circuit according to claim 1 further comprising at least one interconnection extending through said second cured epoxy resin dielectric layer between said circuit pattern layers.
Claim 6
Dependent Claim
14 words
A circuit according to claim 1 wherein said substrate is a cured epoxy resin.
Claim 7
Dependent Claim
32 words
A circuit according to claim 5 wherein the thermal coefficient of expansion of said cured epoxy resin substrate and said first cured epoxy resin dielectric layer is about 60×10 -6 /° C.
Claim 8
Dependent Claim
25 words
A circuit according to claim 5 wherein said cured epoxy resin substrate and said first cured epoxy resin dielectric layer are the same epoxy resin.
Claim 9
Dependent Claim
19 words
A circuit according to claim 7 wherein said second cured epoxy resin dielectric layer is said same epoxy resin.
Claim 10
Dependent Claim
19 words
A circuit according to claim 1 wherein said conductor line density is over 500 lines per inch per level.
Claim 11
Dependent Claim
60 words
A high density interconnect device, comprising: a substrate; a high density interconnect circuit pattern located on said substrate wherein said circuit pattern exhibits a conductor line density of over 300 lines per inch per level; and a cured epoxy resin dielectric surrounding said circuit pattern wherein said cured epoxy resin has a glass transition temperature of at least 175° C.
Claim 12
Dependent Claim
60 words
A high density interconnect device, comprising: a substrate; a high density interconnect circuit pattern located on said substrate wherein said circuit pattern exhibits a conductor line density of over 300 lines per inch per level; and a cured epoxy resin dielectric surrounding said circuit pattern wherein said cured epoxy resin has a glass transition temperature of at least 175° C.
Claim 13
Dependent Claim
69 words
A device according to claim 10 wherein said circuit pattern comprises a first set of essentially parallel wire segments arranged in a first layer; a second set of essentially parallel wire segments perpendicular to said first set and arranged in a second layer; and a plurality of interconnections between said first set and said second set; wherein said cured epoxy resin dielectric separates said wire segments and said layers.
Claim 14
Dependent Claim
13 words
A device according to claim 10 wherein said circuit pattern comprises copper lines.
Claim 15
Dependent Claim
14 words
A device according to claim 10 wherein the substrate is a cured epoxy resin.
Claim 16
Dependent Claim
19 words
A device according to claim 11 wherein said conductor line density is over 500 lines per inch per level.
Claim 17
Dependent Claim
41 words
The invention according to claims 1 or 2 or 3 or 4 or 5 or 6 or 7 or 8 or 9 or 10 or 11 or 12 or 13 or 14 wherein the cured epoxy resin contains a fluorene-containing polyepoxide.
Claim 18
Dependent Claim
14 words
The invention according to claim 15 wherein the cured epoxy resin contains an adjuvant.
Claim 19
Dependent Claim
21 words
The invention according to claim 15 wherein the cured epoxy resin has a glass transition temperature of at least 175° C.
Claim 20
Dependent Claim
25 words
The invention according to claim 15 wherein the cured epoxy resin dielectric contains a plurality of hollow glass microspheres which reduce the dielectric constant thereof.
Claim 21
Dependent Claim
54 words
A high density interconnect device, comprising: a substrate; a high density interconnect circuit pattern located on said substrate wherein said circuit pattern exhibits a conductor line density of over 300 lines per inch per level; and a cured epoxy resin dielectric surrounding said circuit pattern wherein said cured epoxy resin contains a fluorene-containing polyepoxide.
Claim 22
Dependent Claim
54 words
A high density interconnect device, comprising: a substrate; a high density interconnect circuit pattern located on said substrate wherein said circuit pattern exhibits a conductor line density of over 300 lines per inch per level; and a cured epoxy resin dielectric surrounding said circuit pattern wherein said cured epoxy resin contains a fluorene-containing polyepoxide.
Claim 23
Dependent Claim
53 words
A high density interconnect device, comprising: a substrate; a high density interconnect circuit pattern located on said substrate wherein said circuit pattern exhibits a conductor line density of over 300 lines per inch per level; and a cured epoxy resin dielectric surrounding said circuit pattern wherein said cured epoxy resin contains an adjuvant.
Claim 24
Dependent Claim
53 words
A high density interconnect device, comprising: a substrate; a high density interconnect circuit pattern located on said substrate wherein said circuit pattern exhibits a conductor line density of over 300 lines per inch per level; and a cured epoxy resin dielectric surrounding said circuit pattern wherein said cured epoxy resin contains an adjuvant.
Claim 25
Dependent Claim
26 words
A device according to claim 20 wherein said adjuvant is a plurality of hollow glass microspheres which reduce the dielectric constant of the cured epoxy resin.
Claim 26
Dependent Claim
45 words
A high density interconnect device, comprising: a substrate; a high density interconnect circuit pattern located on said substrate wherein said circuit pattern exhibits a conductor line density of over 300 lines per inch per level; and a cured epoxy resin dielectric surrounding said circuit pattern.
Claim 27
Dependent Claim
45 words
A high density interconnect device, comprising: a substrate; a high density interconnect circuit pattern located on said substrate wherein said circuit pattern exhibits a conductor line density of over 300 lines per inch per level; and a cured epoxy resin dielectric surrounding said circuit pattern.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-02 | 1996-08-03 | 1997-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-02 | 2000-08-03 | 2001-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-02 | 2004-08-03 | 2005-02-02 | $7700.00 | Window Closed / Lapsed |