Patent US5200733A successfully refreshed from Google Patents.
US5200733A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Resistor structure and method of fabrication
Assignee: Intersil Corp
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Filing: 1991-10-01
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Granted: 1993-04-06
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Expires: 2011-10-01
Abstract
Abstract A resistor in an integrated circuit having a conductive shield layer between the resistor and an insulative layer. The contacts of the resistor may also contact the conductive shield layer. The shield layer may be formed during a single or double level polysilicon bipolar transistor fabrication process.
Inventors
- 👤 Christopher K. Davis
- 👤 Thomas L. Carndell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:57
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; H10D84/00; H10D84/201; H10D84/204; H10D84/209; H10W; H10W42/00; H10W42/60
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
38 words
An integrated circuit including a resistor comprising: a semiconductor resistor region over an integrated circuit; a conductive shield layer in contact with and over a substantial portion of said resistor region; and an insulator over said shield layer.
Claim 2
Dependent Claim
38 words
An integrated circuit including a resistor comprising: a semiconductor resistor region over an integrated circuit; a conductive shield layer in contact with and over a substantial portion of said resistor region; and an insulator over said shield layer.
Claim 3
Dependent Claim
23 words
An integrated circuit according to claim 1 including resistor contacts extending through openings in said insulator and spaced from said conductive shield layer.
Claim 4
Dependent Claim
22 words
An integrated circuit according to claim 1 including resistor contacts extending through openings in said insulator and contacting said conductive shield layer.
Claim 5
Dependent Claim
20 words
An integrated circuit according to claim 1 wherein said conductive shield layer has a higher resistance than said resistor region.
Claim 6
Dependent Claim
26 words
An integrated circuit according to claim 4 wherein said conductive shield layer has a resistance at least one order of magnitude higher than said resistor region.
Claim 7
Dependent Claim
16 words
An integrated circuit according to claim 1 wherein said conductive shield layer is a metallic material.
Claim 8
Dependent Claim
17 words
An integrated circuit according to claim 1 wherein said conductive shield layer is a polycrystalline semiconductor material.
Claim 9
Dependent Claim
20 words
An integrated circuit according to claim 1 wherein said resistor region is a doped region in a monocrystalline semiconductor layer.
Claim 10
Dependent Claim
35 words
An integrated circuit according to claim 1 including a bipolar transistor having a base region similar to the resistor region, an emitter region and an emitter contact which is similar to the conductive shield layer.
Claim 11
Dependent Claim
23 words
An integrated circuit according to claim 9 wherein said conductive shield layer and said emitter contact are of a common polysilicon semiconductor material.
Claim 12
Dependent Claim
77 words
An integrated circuit including a resistor comprising: a doped resistor region in a monocrystalline semiconductor layer of an integrated circuit; a polycrystalline semiconductor shield layer in contact with and over a substantial portion of said resistor region; a pair of polycrystalline semiconductor contacts on said resistor region and adjacent opposed sides of said shield layer; an insulator over said shield layer and said contacts; a pair of conductors extending through openings in said insulator to said contacts.
Claim 13
Dependent Claim
77 words
An integrated circuit including a resistor comprising: a doped resistor region in a monocrystalline semiconductor layer of an integrated circuit; a polycrystalline semiconductor shield layer in contact with and over a substantial portion of said resistor region; a pair of polycrystalline semiconductor contacts on said resistor region and adjacent opposed sides of said shield layer; an insulator over said shield layer and said contacts; a pair of conductors extending through openings in said insulator to said contacts.
Claim 14
Dependent Claim
17 words
An integrated circuit according to claim 11, including an insulator between said shield layer and said contacts.
Claim 15
Dependent Claim
18 words
An integrated circuit according to claim 11, wherein said shield and said contacts are a common continuous layer.
Claim 16
Dependent Claim
37 words
An integrated circuit according to claim 13, wherein said shield portion of said common layer is undoped and said contact portion of said common layer is doped with the same conductivity type impurities as said resistor region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-05 | 1996-10-05 | 1997-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-05 | 2000-10-05 | 2001-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-05 | 2004-10-05 | 2005-04-06 | $7700.00 | Window Closed / Lapsed |