Semiconductor element having a resistance state transition region of two-layer structure

Claim 2

A semiconductor element formed on a semiconductor substrate and comprising: a lower electrode disposed on said substrate; a resistance-state transition region disposed on said lower electrode, and an upper electrode disposed on said resistance-state transition region, wherein said resistance-state transistor region comprises a silicon oxide insulation film and an amorphous silicon body forming a two-layer structure between said electrodes, with said film interposed between said body and one of said electrodes, said silicon oxide insulation film is a deposited film discrete from each electrode and from said amorphous silicon body, said amorphous silicon body is a deposited body discrete from each said electrode and from said silicon oxide insulation film and said resistance-state transition region is of a composition capable of undergoing a transition, upon exposure to electrical current from a voltage applied between said lower and upper electrodes, from a high resistance state to a lower resistance state, wherein said silicon oxide insulation film is disposed on said lower electrode and said amorphous silicon body is interposed between said silicon insulation film and said upper electrode, and wherein said amorphous silicon body contains an impurity element selected from Group III or V of the Periodic Table.

Claim 3

The semiconductor element according to claim 1 wherein said lower electrode is formed in said semiconductor substrate and is composed of an impurity diffusion layer.

Claim 4

The semiconductor element according to claim 1 wherein at least one of said lower and upper electrodes is composed of polycrystalline silicon.

Claim 5

The semiconductor element according to claim 1 wherein said lower electrode is composed of polycrystalline silicon.

Claim 6

A semiconductor element formed on a semiconductor substrate and comprising: a lower electrode disposed on said substrate; a resistance-state transition region disposed on said lower electrode, and an upper electrode disposed on said resistance-state transistor region, wherein said resistance-state transition region comprises a silicon oxide insulation film and an amorphous silicon body forming a two-layer structure between said electrodes, with said film interposed between said body and one of said electrodes, said silicon oxide insulation film is a deposited film discrete from each electrode and from said amorphous silicon body, said amorphous silicon body is a deposited body discrete from each said electrode and from said silicon oxide insulation film and said resistance-state transition region is of a composition capable of undergoing a transition, upon exposure to electrical current from a voltage applied between said lower and upper electrodes, from a high resistance state to a lower resistance state, wherein said amorphous silicon body is disposed on said lower electrode and said silicon oxide insulation film is disposed between said amorphous silicon body and said upper electrode, and wherein said amorphous silicon body contains an impurity element selected from the Group III or V of the Periodic Table.

Claim 7

A semiconductor element formed on a semiconductor substrate and comprising: a lower electrode disposed on said substrate; a resistance-state transition region disposed on said lower electrode, and an upper electrode disposed on said resistance-state transistor region, wherein said resistance-state transition region comprises a silicon oxide insulation film and an amorphous silicon body forming a two-layer structure between said electrodes, with said film interposed between said body and one of said electrodes, said silicon oxide insulation film is a deposited film discrete from each electrode and from said amorphous silicon body, said amorphous silicon body is a deposited body discrete from each said electrode and from said silicon oxide insulation film and said resistance-state transition region is of a composition capable of undergoing a transition, upon exposure to electrical current from a voltage applied between said lower and upper electrodes, from a high resistance state to a lower resistance state, wherein said amorphous silicon body is disposed on said lower electrode and said silicon oxide insulation film is disposed between said amorphous silicon body and said upper electrode, and wherein said amorphous silicon body contains an impurity element selected from the Group III or V of the Periodic Table.

Claim 8

The semiconductor element according to claim 5 wherein said lower electrode is formed in said semiconductor substrate and is composed of an impurity diffusion layer.

Claim 9

The semiconductor element according to claim 1 wherein said silicon oxide insulation film is a thin film which will be broken upon exposure to the electrical current from the voltage applied between said lower and upper electrodes.

Claim 10

The semiconductor element according to claim 5 wherein said silicon oxide insulation film is a thin film which will be broken upon exposure to the electrical current from the voltage applied between said lower and upper electrodes.