US5213658A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma processing method
Assignee: Mitsubishi Electric Corp
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Filing: 1991-01-23
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Granted: 1993-05-25
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Expires: 2011-01-23
Abstract
Abstract In a plasma processing method and a plasma processing apparatus, plasma is processed by floating a focus ring by the repulsion between a magnet mounted in the focus ring and another electromagnet and adjusting the height of the focus ring to an optimal height by the current flowing to the electromagnet. Therefore, it is possible to set an optimal height of the focus ring for each layer in the laminated film etching, to enhance the uniformity of the laminated film etching, and to achieve a precise etching.
Inventors
- 👤 Tomoaki Ishida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:25
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/3266; H01J37/32697
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
91 words
A plasma processing method comprising: placing a substrate to be processed on a high frequency electrode disposed in a processing container; exhausting gas from said processing container and introducing reactive gas into said processing container; generating a plasma in said processing container by applying high frequency electric power to said high frequency electrode, thereby processing the substrate; and while generating a plasma, levitating a focus ring having a magnet therein and surrounding the substrate to a predetermined height above the high frequency electrode with a magnetic field produced by another magnet.
Claim 2
Dependent Claim
91 words
A plasma processing method comprising: placing a substrate to be processed on a high frequency electrode disposed in a processing container; exhausting gas from said processing container and introducing reactive gas into said processing container; generating a plasma in said processing container by applying high frequency electric power to said high frequency electrode, thereby processing the substrate; and while generating a plasma, levitating a focus ring having a magnet therein and surrounding the substrate to a predetermined height above the high frequency electrode with a magnetic field produced by another magnet.
Claim 3
Dependent Claim
42 words
A plasma processing method according to claim 1 including processing said substrate by etching a laminated film comprising a plurality of layers and disposed on said substrate and adjusting the height of said focus ring during etching of each of said layers.
Claim 4
Dependent Claim
28 words
A plasma processing method according to claim 1 including processing said substrate by etching a single layer film disposed on said substrate in more than one etching step.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-24 | 1996-11-23 | 1997-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-24 | 2000-11-23 | 2001-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-24 | 2004-11-23 | 2005-05-25 | $7700.00 | Window Closed / Lapsed |