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US5213995A
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Method of making an article comprising a periodic heteroepitaxial semiconductor structure
Assignee: Nokia Bell Labs
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Filing: 1992-04-16
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Granted: 1993-05-25
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Expires: 2012-04-16
Abstract
Abstract A novel method of making articles that comprise a periodic heteroepitaxial semiconductor structure is disclosed. The method pertains to growth of the periodic structure by MBE, CVD or similar growth techniques, and involves periodically changing the substrate temperature. For instance, a periodic multilayer GaAs/AlGaAs is grown by MBE, with the substrate temperature cycled between 600° C. and 700° C. The novel method can produce multilayer structures of uniformly high material quality.
Inventors
- 👤 Young-Kai Chen
- 👤 Minghwei Hong
- 👤 Joseph P. Mannaerts
- 👤 Ming-Chiang Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:45
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/20; H10H20/01; H10H20/011; H10H20/013; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; H01S5/2004; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32316; H01S5/34; H01S5/343; H01S5/34313; H01S5/3432; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
171 words
Method of making an article that comprises a periodic heteroepitaxial structure that comprises at least two pairs of semiconductor layers, a given pair comprising a first signal crystal semiconductor layer of a first composition in contact with a second single crystal semiconductor layer of a second composition that differs from the first composition, the method comprising a) providing a substrate; b) exposing the substrate to a growth medium of a first composition such that the first semiconductor layer is formed on a major surface of the substrate; c) exposing the substrate with the first semiconductor layer thereon to a growth medium of a second composition such that the second semiconductor region is formed on the first semiconductor region; and d) repeating steps b) and c) at least once; characterized in that e) during at least a part of step b) the substrate is maintained at a first temperature, and during at least a part of step c) the substrate is maintained at a second temperature that differs from the first temperature.
Claim 2
Dependent Claim
171 words
Method of making an article that comprises a periodic heteroepitaxial structure that comprises at least two pairs of semiconductor layers, a given pair comprising a first signal crystal semiconductor layer of a first composition in contact with a second single crystal semiconductor layer of a second composition that differs from the first composition, the method comprising a) providing a substrate; b) exposing the substrate to a growth medium of a first composition such that the first semiconductor layer is formed on a major surface of the substrate; c) exposing the substrate with the first semiconductor layer thereon to a growth medium of a second composition such that the second semiconductor region is formed on the first semiconductor region; and d) repeating steps b) and c) at least once; characterized in that e) during at least a part of step b) the substrate is maintained at a first temperature, and during at least a part of step c) the substrate is maintained at a second temperature that differs from the first temperature.
Claim 3
Dependent Claim
43 words
The method according to claim 1, wherein associated with the semiconductors of the first and second composition are, respectively, first and second optical growth temperature ranges, with said first and second temperatures being within the first and second optical growth temperature ranges, respectively.
Claim 4
Dependent Claim
15 words
The method of claim 1, wherein the periodic heteroepitaxial structure is a III-V heteroepitaxial structure.
Claim 5
Dependent Claim
25 words
The method of claim 1, wherein said first and second growth media are first and second particle fluxes, and the method comprises molecular beam epitaxy.
Claim 6
Dependent Claim
18 words
The method of claim 1, wherein said article comprises an opto-electronic device that comprises said periodic heteroepitaxial structure.
Claim 7
Dependent Claim
12 words
The method of claim 5, wherein the opto-electronic device is a laser.
Claim 8
Dependent Claim
35 words
The method of claim 6, wherein the first composition is GaAs and the second composition comprises Al and As, and wherein the first and second temperatures are about 600° C. and about 700° C., respectively.
References Cited (Backward Citations)
US4900372A
Cited
US5079616A
Cited
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