US5221425A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for reducing foreign matter on a wafer etched in a reactive ion etching process
Assignee: International Business Machines Corp
•
Filing: 1991-08-21
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Granted: 1993-06-22
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Expires: 2011-08-21
Abstract
Abstract A system for reducing the concentration of foreign material on a wafer etched in a reactive ion etch chamber is disclosed. As a radio frequency voltage is applied within the etch chamber, the pressure within the etch chamber may be reduced to a base pressure. Also, the flow of gas into the etch chamber may be maintained. This may include minimizing the flow of high reactive gas into the etch chamber while maintaining the flow of low reactive gas therein. The system further includes deactivating the radio frequency voltage. Deactivating the radio frequency voltage may be accomplished by gradually reducing the voltage to a minimum voltage. The gradual reduction may be accomplished by incrementally reducing the voltage in a series of steps. If reactive ion etching occurs with magnetic enhancements, the magnetic field applied to the etch chamber may be deactivated, typically prior to the reduction of the radio frequency voltage.
Inventors
- 👤 Gary W. Blanchard
- 👤 Charles R. Bossi
- 👤 Edward H. Payne
- 👤 Thomas W. Weeks
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:33
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J2237/00; H01J2237/02; H01J2237/022; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3341
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
86 words
A method of reducing the concentration of foreign material on a wafer etched in a reactive ion etch chamber by transmitting radio frequency voltage within the etch chamber and flowing gas therein, the method comprising: in the presence of a radio frequency voltage, reducing the pressure within the etch chamber to a base pressure while maintaining a flow of low reactive gas into the chamber and minimizing a flow of high reactive gas into the chamber after the wafer has been etched to a certain degree.
Claim 2
Independent Claim
86 words
A method of reducing the concentration of foreign material on a wafer etched in a reactive ion etch chamber by transmitting radio frequency voltage within the etch chamber and flowing gas therein, the method comprising: in the presence of a radio frequency voltage, reducing the pressure within the etch chamber to a base pressure while maintaining a flow of low reactive gas into the chamber and minimizing a flow of high reactive gas into the chamber after the wafer has been etched to a certain degree.
Claim 3
Dependent Claim
22 words
The method of claim 1 further comprising subsequently deactivating a radio frequency voltage being applied to a cathode within the etch chamber.
Claim 4
Dependent Claim
25 words
The method of claim 2 wherein the step of deactivating a radio frequency voltage comprises gradually reducing the radio frequency voltage to a minimum voltage.
Claim 5
Dependent Claim
24 words
The method of claim 3 wherein the step of deactivating the radio frequency voltage comprises incrementally reducing the voltage in a series of steps.
Claim 6
Dependent Claim
16 words
The method of claim 3 further comprising deactivating a magnetic field applied to the etch chamber.
Claim 7
Independent Claim
91 words
A method of reducing the concentration of foreign material on a wafer etched in a reactive ion etch chamber by transmitting a radio frequency voltage within the etch chamber and flowing gas therein, the method comprising: reducing the pressure within the etch chamber to a base pressure; minimizing a flow of high reactive gas into the chamber while maintaining a flow of low reactive gas into the chamber; thereafter, deactivating a radio frequency voltage applied to a cathode within the etch chamber by gradually reducing the voltage to a minimum voltage.
Claim 8
Independent Claim
91 words
A method of reducing the concentration of foreign material on a wafer etched in a reactive ion etch chamber by transmitting a radio frequency voltage within the etch chamber and flowing gas therein, the method comprising: reducing the pressure within the etch chamber to a base pressure; minimizing a flow of high reactive gas into the chamber while maintaining a flow of low reactive gas into the chamber; thereafter, deactivating a radio frequency voltage applied to a cathode within the etch chamber by gradually reducing the voltage to a minimum voltage.
Claim 9
Dependent Claim
38 words
The method of claim 6 further comprising deactivating a magnetic field applied to the etch chamber after minimizing the flow of high reactive gas in the chamber while maintaining the flow of low reactive gas into the chamber.
Claim 10
Independent Claim
101 words
A method of reactive ion etching a wafer within a reactive ion etch chamber comprising: evacuating the reactive ion etch chamber to an operating pressure; flowing gas into the etch chamber while the etch chamber is maintained at said operating pressure; applying a radio frequency voltage to a cathode within the etch chamber; reducing the pressure in the etch chamber to a base pressure while the radio frequency voltage is applied to the cathode; and maintaining the etch chamber at said base pressure and flowing low reactive gas into the etch chamber while minimizing the flow of high reactive gas therein.
Claim 11
Independent Claim
101 words
A method of reactive ion etching a wafer within a reactive ion etch chamber comprising: evacuating the reactive ion etch chamber to an operating pressure; flowing gas into the etch chamber while the etch chamber is maintained at said operating pressure; applying a radio frequency voltage to a cathode within the etch chamber; reducing the pressure in the etch chamber to a base pressure while the radio frequency voltage is applied to the cathode; and maintaining the etch chamber at said base pressure and flowing low reactive gas into the etch chamber while minimizing the flow of high reactive gas therein.
Claim 12
Dependent Claim
17 words
The method of claim 8 further comprising subsequently deactivating the radio frequency voltage applied to the cathode.
Claim 13
Dependent Claim
22 words
The method of claim 9 wherein deactivating the radio frequency voltage comprises gradually reducing the radio frequency voltage to a minimum voltage.
Claim 14
Dependent Claim
20 words
The method of claim 10 wherein deactivating the radio frequency comprises incrementally reducing the voltage in a series of steps.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-21 | 1996-12-21 | 1997-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-21 | 2000-12-21 | 2001-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-21 | 2004-12-21 | 2005-06-22 | $7700.00 | Window Closed / Lapsed |