US5246745A
Expired / Lapsed
US
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Laser-induced chemical vapor deposition of thin-film conductors
Assignee: International Business Machines Corp
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Filing: 1991-12-23
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Granted: 1993-09-21
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Expires: 2011-12-23
Abstract
Abstract Control of the local environment during pulsed laser removal of thin film circuit metallurgy is used to change the nature of the top surfaces. Interconnecting such laser treated surfaces with LCVD films results in different growth morphologies, dependent on the nature of the surface created and the debris generated during the ablation process. Flowing helium across the surface during the ablation process results in improved growth morphologies for the same laser writing conditions. A low power laser scan is used to induce metal deposition on the substrate without surface damage. This is followed by several scans at an intermediate laser power to deposit the desired thickness of metal (e.g., about 8 mu m). Lastly, a high power laser scan is used, either at the points of intersection between the existing metallurgy and the metal repair or across the entire deposit area. Thermal spreading or blooming is reduced by modulating the intensity of the laser source.
Inventors
- 👤 Thomas H. Baum
- 👤 Paul B. Comita
- 👤 John R. Lankard Sr.
- 👤 Thoams F. Redmond
- 👤 Thomas A. Wassick
- 👤 Robert L. Jackson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:04
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/22; H05K3/225; C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/067; H10W20/068; H10W70/00; H10W70/01; H10W70/05; H10W70/092; H05K2203/00; H05K2203/10; H05K2203/107; H05K2203/13; H05K2203/1333; H05K2203/1338; H05K2203/17; H05K2203/173
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
138 words
A laser-induced chemical vapor deposition process for interconnecting two points on a thin-film electrical circuit formed on a substrate, comprising the steps of: first scanning a laser beam at a low beam intensity along said dielectric surface between said two points to deposit a conductor on said surface extending between said two points by laser-induced chemical vapor deposition; next scanning a laser beam at a higher beam intensity between said two points to deposit a conductor extending between said two points by laser-induced chemical vapor deposition from a organo-metallic precursor; and modulating the intensity of said laser beam at said higher beam intensity by alternately blocking said laser beam from said surface and transmitting said laser beam to said surface at a frequency that attenuates the transmission of heat along said thin-film surface generated by said scanning laser.
Claim 2
Dependent Claim
138 words
A laser-induced chemical vapor deposition process for interconnecting two points on a thin-film electrical circuit formed on a substrate, comprising the steps of: first scanning a laser beam at a low beam intensity along said dielectric surface between said two points to deposit a conductor on said surface extending between said two points by laser-induced chemical vapor deposition; next scanning a laser beam at a higher beam intensity between said two points to deposit a conductor extending between said two points by laser-induced chemical vapor deposition from a organo-metallic precursor; and modulating the intensity of said laser beam at said higher beam intensity by alternately blocking said laser beam from said surface and transmitting said laser beam to said surface at a frequency that attenuates the transmission of heat along said thin-film surface generated by said scanning laser.
Claim 3
Dependent Claim
61 words
A laser-induced chemical vapor deposition process as in claim 1, wherein said substrate surface is a polyimide material, said beam intensity is varied in range extending from a low beam intensity of 0.5 mW to a high beam intensity of 150 mW and said beam is scanned at a speed that varies in a range between 1.0 μm/sec and 25.0 μm/sec.
Claim 4
Dependent Claim
61 words
A laser-induced chemical vapor deposition process as in claim 1, wherein said substrate surface is a glass-ceramic material, said beam intensity is varied in range extending from a low beam intensity of 250 mW to a high beam intensity of 1000 mW and said beam is scanned at a speed that varies in a range between 5.0 μm/sec and 25.0 μm/sec.
Claim 5
Dependent Claim
62 words
A laser-induced chemical vapor deposition process as in claim 1, wherein said substrate surface is an alumina ceramic material, said beam intensity is varied in range extending from a low beam intensity of 350 mW to a high beam intensity of 2000 mW and said beam is scanned at a speed that varies in a range between 5.0 μm/sec and 25.0 μm/sec.
Claim 6
Dependent Claim
135 words
A laser-induced chemical vapor deposition process for interconnecting two points on a thin-film electrical circuit formed on a polyimide substrate, comprising the steps of: first scanning a laser beam at a low beam intensity along a surface on said polyimide substrate between said two points to deposit a conductor on said surface extending between said two points by laser-induced chemical vapor deposition; next scanning a laser beam at a higher beam intensity between said two points to deposit a conductor extending between said two points by laser-induced chemical vapor deposition from a organo-metallic precursor; varying the beam intensity in a range extending from a low-beam intensity of 0.5 mW to a high beam intensity of 150 mW; and scanning said beam at a speed that varies in a range between 1.0 μm/sec and 25.0 μm/sec.
Claim 7
Dependent Claim
135 words
A laser-induced chemical vapor deposition process for interconnecting two points on a thin-film electrical circuit formed on a polyimide substrate, comprising the steps of: first scanning a laser beam at a low beam intensity along a surface on said polyimide substrate between said two points to deposit a conductor on said surface extending between said two points by laser-induced chemical vapor deposition; next scanning a laser beam at a higher beam intensity between said two points to deposit a conductor extending between said two points by laser-induced chemical vapor deposition from a organo-metallic precursor; varying the beam intensity in a range extending from a low-beam intensity of 0.5 mW to a high beam intensity of 150 mW; and scanning said beam at a speed that varies in a range between 1.0 μm/sec and 25.0 μm/sec.
Claim 8
Dependent Claim
135 words
A laser-induced chemical vapor deposition process for interconnecting two points on a thin-film electrical circuit formed on a glass-ceramic substrate, comprising the steps of: first scanning a laser beam at a low beam intensity along a surface on said glass-ceramic substrate between said two points to deposit a conductor on said surface extending between said two points by laser-induced chemical vapor deposition; next scanning a laser beam at a higher beam intensity between said two points to deposit a conductor extending between said two points by laser-induced chemical vapor deposition from a organo-metallic precursor; varying the beam intensity in a range extending from a low-beam intensity of 250 mW to a high beam intensity of 1000 mW; and scanning said beam at a speed that varies in a range between 5.0 μm/sec and 25.0 μm/sec.
Claim 9
Dependent Claim
135 words
A laser-induced chemical vapor deposition process for interconnecting two points on a thin-film electrical circuit formed on a glass-ceramic substrate, comprising the steps of: first scanning a laser beam at a low beam intensity along a surface on said glass-ceramic substrate between said two points to deposit a conductor on said surface extending between said two points by laser-induced chemical vapor deposition; next scanning a laser beam at a higher beam intensity between said two points to deposit a conductor extending between said two points by laser-induced chemical vapor deposition from a organo-metallic precursor; varying the beam intensity in a range extending from a low-beam intensity of 250 mW to a high beam intensity of 1000 mW; and scanning said beam at a speed that varies in a range between 5.0 μm/sec and 25.0 μm/sec.
Claim 10
Dependent Claim
137 words
A laser-induced chemical vapor deposition process for interconnecting two points on a thin-film electrical circuit formed on a alumina ceramic substrate, comprising the steps of: first scanning a laser beam at a low beam intensity along a surface on said alumina ceramic substrate between said two points to deposit a conductor on said surface extending between said two points by laser-induced chemical vapor deposition; next scanning a laser beam at a higher beam intensity between said two points to deposit a conductor extending between said two points by laser-induced chemical vapor deposition from a organo-metallic precursor; varying the beam intensity in a range extending from a low-beam intensity of 350 mW to a high beam intensity of 2000 mW; and scanning said beam at a speed that varies in a range between 5.0 μm/sec and 25.0 μm/sec.
Claim 11
Dependent Claim
137 words
A laser-induced chemical vapor deposition process for interconnecting two points on a thin-film electrical circuit formed on a alumina ceramic substrate, comprising the steps of: first scanning a laser beam at a low beam intensity along a surface on said alumina ceramic substrate between said two points to deposit a conductor on said surface extending between said two points by laser-induced chemical vapor deposition; next scanning a laser beam at a higher beam intensity between said two points to deposit a conductor extending between said two points by laser-induced chemical vapor deposition from a organo-metallic precursor; varying the beam intensity in a range extending from a low-beam intensity of 350 mW to a high beam intensity of 2000 mW; and scanning said beam at a speed that varies in a range between 5.0 μm/sec and 25.0 μm/sec.
References Cited (Backward Citations)
US4711790A
Cited
US4880959A
Cited
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