US5250468A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor device including interlaying insulating film
Assignee: Mitsubishi Electric Corp
•
Filing: 1992-03-25
•
Granted: 1993-10-05
•
Expires: 2012-03-25
Abstract
Abstract The method of forming an interlayer insulating film insulating first and second layers of conductor patterns in a semiconductor device includes the steps of preparing a reaction gas including at least ozone and silicon alkoxide, wherein the ratio of ozone with respect to silicon alkoxide is adjusted to be not less than 5 within the reaction gas, and forming an insulating film by CVD reacting the reaction gas at atmospheric pressure at the temperature of 350° C.- 450° C., whereupon the interlayer insulating film includes at least the insulating film formed by atmospheric pressure CVD reaction.
Inventors
- 👤 Masazumi Matsuura
- 👤 Hideo Kotani
- 👤 Atsuhiro Fujii
- 👤 Shigeo Nagao
- 👤 Hideki Genjo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:29
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/093; H10W20/097; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
102 words
A method of forming an interlayer insulating film for mutually insulating a first layer and a second layer of conductor patterns in a semiconductor device, said method comprising the steps of: preparing a reaction gas including at least ozone and silicon alkoxide, with the ratio of ozone with respect to said silicon alkoxide in said reaction gas adjusted to be not less than 5, and forming an insulating film by CVD reacting said reaction gas at atmospheric pressure at a temperature of 350°-450° C., wherein said interlayer insulating film includes at least the insulating film formed by said atmospheric pressure CVD reaction.
Claim 2
Independent Claim
102 words
A method of forming an interlayer insulating film for mutually insulating a first layer and a second layer of conductor patterns in a semiconductor device, said method comprising the steps of: preparing a reaction gas including at least ozone and silicon alkoxide, with the ratio of ozone with respect to said silicon alkoxide in said reaction gas adjusted to be not less than 5, and forming an insulating film by CVD reacting said reaction gas at atmospheric pressure at a temperature of 350°-450° C., wherein said interlayer insulating film includes at least the insulating film formed by said atmospheric pressure CVD reaction.
Claim 3
Dependent Claim
15 words
The method according to claim 1, wherein said reaction gas has gas including phosphorus added.
Claim 4
Dependent Claim
16 words
The method according to claim 2, wherein said reaction gas has gas including boron further added.
Claim 5
Dependent Claim
16 words
The method according to claim 1, wherein said first layer conductor pattern is formed with aluminum.
Claim 6
Dependent Claim
16 words
The method according to claim 1, wherein said second layer conductor pattern is formed with aluminum.
References Cited (Backward Citations)
US4826786A
Cited
US4729006A
Cited
EP0272140A2
Cited
US4872947A
Cited
US4960488A
Cited
US5000113A
Cited
JPS63226065A
Cited
US4937645A
Cited
US4984055A
Cited
US5063655A
Cited
US5094984A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-04 | 1997-04-05 | 1997-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-04 | 2001-04-05 | 2001-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-04 | 2005-04-05 | 2005-10-05 | $7700.00 | Window Closed / Lapsed |