US5253199A
Expired / Lapsed
US
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JJ-MOS read access circuit for MOS memory
Assignee: Microelectronics and Computer Technology Corp
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Filing: 1991-06-17
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Granted: 1993-10-12
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Expires: 2011-06-17
Abstract
Abstract Apparatus for selecting memory cells in a MOS memory array and reading data contained therein. Superconducting Josephson junction devices switch between a superconducting and voltage gap mode for rapid selection of an addressed memory cell row and column, and then read out of the selected memory cell data contained therein.
Inventors
- 👤 David A. Gibson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:58
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/44
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
390 words
An electrical circuit for selecting memory cells in a memory array and reading data contained in a selected memory cell, said memory cells selected by a memory array row and a memory array column, said electrical circuit using superconducing junction devices that are switched between a superconducting and voltage gap mode, said memory cells not using such superconducting junction devices, said circuit comprising: a first superconducting junction device for selecting a memory array row; a second superconducting device for selecting a memory array column; third and fourth superconducting devices each having a control loop for modifying the amount of critical current required to switch modes; a fifth superconducting device having first and second control loops, wherein the difference between the currents in said first and second control loops controls the amount of critical current required to switch modes in said fifth junction device; first clock means connected to said first junction, said first clock means having a current signal that switches said first junction into the voltage gap mode thereby generating a memory array row select signal; means for providing the row select signal to said third junction device control loop when the memory cell contains a logic one and to said fourth junction device control loop when the memory cell contains a logic zero; means for providing the output voltage of said third and fourth devices as an input control signal to said first and second control loops of said fifth junction device, respectively; second clock means connected to said second junction, said second clock means having a current signal that switches said second junction into the voltage gap mode thereby generating a memory array column select signal; means for providing the column select signal to said third and fourth junction devices, wherein the column select signal switches said third or fourth junction into the voltage gap mode when the respective control loop is connected to the row select signal; and third clock means connected to said fifth junction, said third clock means having a current signal that switches said fifth junction into the voltage gap mode when the current resulting from the column select signal is less in the first control loop than in the second control loop of said fifth junction, causing the data contents of the memory cell to be presented at the fifth junction mode.
Claim 2
Dependent Claim
390 words
An electrical circuit for selecting memory cells in a memory array and reading data contained in a selected memory cell, said memory cells selected by a memory array row and a memory array column, said electrical circuit using superconducing junction devices that are switched between a superconducting and voltage gap mode, said memory cells not using such superconducting junction devices, said circuit comprising: a first superconducting junction device for selecting a memory array row; a second superconducting device for selecting a memory array column; third and fourth superconducting devices each having a control loop for modifying the amount of critical current required to switch modes; a fifth superconducting device having first and second control loops, wherein the difference between the currents in said first and second control loops controls the amount of critical current required to switch modes in said fifth junction device; first clock means connected to said first junction, said first clock means having a current signal that switches said first junction into the voltage gap mode thereby generating a memory array row select signal; means for providing the row select signal to said third junction device control loop when the memory cell contains a logic one and to said fourth junction device control loop when the memory cell contains a logic zero; means for providing the output voltage of said third and fourth devices as an input control signal to said first and second control loops of said fifth junction device, respectively; second clock means connected to said second junction, said second clock means having a current signal that switches said second junction into the voltage gap mode thereby generating a memory array column select signal; means for providing the column select signal to said third and fourth junction devices, wherein the column select signal switches said third or fourth junction into the voltage gap mode when the respective control loop is connected to the row select signal; and third clock means connected to said fifth junction, said third clock means having a current signal that switches said fifth junction into the voltage gap mode when the current resulting from the column select signal is less in the first control loop than in the second control loop of said fifth junction, causing the data contents of the memory cell to be presented at the fifth junction mode.
Claim 3
Dependent Claim
18 words
The circuit of claim 1, wherein the first superconducting junction device comprises at least one Josephson tunnel junction.
Claim 4
Dependent Claim
18 words
The circuit of claim 1, wherein the second superconducting junction device comprises at least one Josephson tunnel junction.
Claim 5
Dependent Claim
13 words
The circuit of claim 1, wherein the superconducting devices are made of niobium.
Claim 6
Dependent Claim
14 words
The circuit of claim 1, wherein the superconducting devices are made of niobium nitride.
Claim 7
Dependent Claim
22 words
The circuit of claim 1, wherein the superconducting devices each have first and second terminals adapted for connection in an integrated circuit.
Claim 8
Dependent Claim
16 words
The circuit of claim 1, wherein the means for providing a signal comprises field effect transistors.
Claim 9
Dependent Claim
16 words
The circuit of claim 1, wherein the means for providing a signal comprises bipolar junction transistors.
Claim 10
Dependent Claim
17 words
The circuit of claim 1, wherein the means for providing a signal comprises complementary field effect transistors.
Claim 11
Dependent Claim
17 words
The circuit of claim 1, wherein the means for providing a signal comprises superconducting field effect transistors.
Claim 12
Dependent Claim
31 words
The circuit of claim 1, further comprising a means for converting the voltage gap signal level from said fifth junction to a voltage signal level compatible with field effect transistor logic.
Claim 13
Dependent Claim
34 words
The circuit of claim 1, further comprising means for selecting the next memory cell row and column while reading said fifth junction mode representative of the data contents of the presently selected memory cell.
Claim 14
Dependent Claim
352 words
An electrical circuit for selecting memory cells in a memory array and reading data contained in a selected memory cell, said memory cells selected by a memory array row and a memory array column, said electrical circuit using superconducting junction devices that are switched between a superconducting and voltage gap mode, said memory cells not using such superconducting junction devices, said circuit comprising: a first superconducting junction device for selecting a memory array row; a second superconducting device for selecting a memory array column; a third and fourth superconducting device having a control loop for modifying the amount of critical current required switch modes; a fourth superconducting device having a control loop for modifying the amount of critical required to switch modes; first clock means connected to said first junction, said first clock means having a current signal that switches said first junction into the voltage gap mode thereby generating a memory array row select signal; means for providing the row select signal to said third junction device control loop only when the memory cell contains a logic one; means for providing the output voltage of said third junction device as an input control signal to said control loop of said fourth junction device; second clock means connected to said second junction, said second clock means having a current signal that switches said second junction into the voltage gap mode thereby generating a memory array column select signal; means for providing the column select signal to said third junction device, wherein the column select signal switches said third junction into the voltage gap mode when the respective control loop of said third junction is connected to the row select signal; and third clock means connected to said fourth junction, said third clock means having a current signal that switches said fourth junction into the voltage gap mode when the critical current of said fourth junction is reduced below said third clock means signal current by the fourth junction control loop resulting from the column select signal, causing the data contents of the memory cell to be presented at said fourth junction mode.
Claim 15
Dependent Claim
352 words
An electrical circuit for selecting memory cells in a memory array and reading data contained in a selected memory cell, said memory cells selected by a memory array row and a memory array column, said electrical circuit using superconducting junction devices that are switched between a superconducting and voltage gap mode, said memory cells not using such superconducting junction devices, said circuit comprising: a first superconducting junction device for selecting a memory array row; a second superconducting device for selecting a memory array column; a third and fourth superconducting device having a control loop for modifying the amount of critical current required switch modes; a fourth superconducting device having a control loop for modifying the amount of critical required to switch modes; first clock means connected to said first junction, said first clock means having a current signal that switches said first junction into the voltage gap mode thereby generating a memory array row select signal; means for providing the row select signal to said third junction device control loop only when the memory cell contains a logic one; means for providing the output voltage of said third junction device as an input control signal to said control loop of said fourth junction device; second clock means connected to said second junction, said second clock means having a current signal that switches said second junction into the voltage gap mode thereby generating a memory array column select signal; means for providing the column select signal to said third junction device, wherein the column select signal switches said third junction into the voltage gap mode when the respective control loop of said third junction is connected to the row select signal; and third clock means connected to said fourth junction, said third clock means having a current signal that switches said fourth junction into the voltage gap mode when the critical current of said fourth junction is reduced below said third clock means signal current by the fourth junction control loop resulting from the column select signal, causing the data contents of the memory cell to be presented at said fourth junction mode.
Claim 16
Dependent Claim
16 words
The circuit of claims 1 or 13 wherein the memory cells are one-bit binary semiconducting devices.
Claim 17
Dependent Claim
12 words
The circuit of claim 14 wherein the memory cells contain MOS transistors.
Claim 18
Dependent Claim
14 words
The circuit of claim 14 wherein the memory cells do not contain Josephson junctions.
Claim 19
Dependent Claim
24 words
The circuit of claim 14 wherein the read and write operations for the memory cells require voltage swings of from 2 to 5 volts.
Claim 20
Dependent Claim
11 words
The circuit of claim 14 wherein memory cells have static configuration.
Claim 21
Dependent Claim
12 words
The circuit of claim 14 wherein the memory cells have dynamic configuration.
Claim 22
Dependent Claim
10 words
The circuit of claim 14, further comprising the memory cell.
Claim 23
Dependent Claim
23 words
The circuit of claim 14 wherein the means for providing the column select signal to the third junction device includes a MOS transistor.
Claim 24
Dependent Claim
44 words
The circuit of claim 14 wherein a voltage swing of from 2 to 5 volts is applied to the control loop of the third superconducting device in order to modify the amount of critical current required to switch modes in the third superconducting device.
Claim 25
Dependent Claim
27 words
The circuit of claim 14 wherein the means for providing the output voltage of the third junction device as an input control signal includes a MOS transistor.
Claim 26
Dependent Claim
26 words
The circuit of claim 23 wherein a voltage swing of from 2 to 5 volts is applied by the MOS transistor as the input control signal.
References Cited (Backward Citations)
US4130893A
Cited
US4509146A
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JPS59139198A
Cited
US4785426A
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JPS6387697A
Cited
US4979205A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-11 | 1997-04-12 | 1997-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-11 | 2001-04-12 | 2001-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-11 | 2005-04-12 | 2005-10-12 | $7700.00 | Window Closed / Lapsed |