Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
59 words
A word line driver circuit for a memory means, said word line driver circuit having at least one word line driver transistor including a Darlington circuit connected in parallel with said at least one word line driver transistor; an input to said Darlington circuit being connected to an input of said word line driver transistor through a bootstrap capacitor.
Claim 2
Dependent Claim
59 words
A word line driver circuit for a memory means, said word line driver circuit having at least one word line driver transistor including a Darlington circuit connected in parallel with said at least one word line driver transistor; an input to said Darlington circuit being connected to an input of said word line driver transistor through a bootstrap capacitor.
Claim 3
Dependent Claim
31 words
A circuit as recited in claim 1, wherein said bootstrap capacitor is provided with a conductance means; the combination of said capacitor and said conductance forming a time constant producing means.
Claim 4
Dependent Claim
17 words
A circuit as recited in claim 2, wherein said time constant producing means includes a diffusion capacitance.
Claim 5
Dependent Claim
30 words
A circuit as recited in claim 3, wherein a time constant produced by said time constant producing means is in excess of an access cycle time of said memory means.
Claim 6
Dependent Claim
72 words
A word line driver circuit for a memory means, said word line driver circuit having at least one word line driver transistor including a Darlington circuit connected in parallel with said at least one word line driver transistor; an input to said Darlington circuit being connected to an input of said word line driver transistor through a bootstrap capacitor having a capacitance which is variable with a conductance through said bootstrap capacitor.
Claim 7
Dependent Claim
72 words
A word line driver circuit for a memory means, said word line driver circuit having at least one word line driver transistor including a Darlington circuit connected in parallel with said at least one word line driver transistor; an input to said Darlington circuit being connected to an input of said word line driver transistor through a bootstrap capacitor having a capacitance which is variable with a conductance through said bootstrap capacitor.
Claim 8
Dependent Claim
31 words
A circuit as recited in claim 5, wherein said bootstrap capacitor is provided with a conductance means; the combination of said capacitor and said conductance forming a time constant producing means.
Claim 9
Dependent Claim
17 words
A circuit as recited in claim 6, wherein said time constant producing means is a diffusion capacitance.
Claim 10
Dependent Claim
30 words
A circuit as recited in claim 7, wherein a time constant produced by said time constant producing means is in excess of an access cycle time of said memory means.
Claim 11
Dependent Claim
14 words
A circuit as recited in claim 5, wherein said capacitance is a diffusion capacitance.
Claim 12
Dependent Claim
36 words
A word line decoder/driver circuit for a memory device including a half current switch, said half current switch including an adjustable clamp means for clamping a down-level voltage of a drain line of said memory device.
Claim 13
Dependent Claim
36 words
A word line decoder/driver circuit for a memory device including a half current switch, said half current switch including an adjustable clamp means for clamping a down-level voltage of a drain line of said memory device.
Claim 14
Dependent Claim
23 words
A circuit as recited in claim 10, wherein said adjustable clamp means includes means for providing temperature compensation of said half current switch.
Claim 15
Dependent Claim
48 words
A circuit as recited in claim 11, wherein said half current switch includes a transistor and wherein said means for providing temperature compensation of said half current switch comprises a feedback circuit connected to conduct current away from a base of said transistor of said half current switch.