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Surface treatment method and apparatus for a semiconductor wafer

Assignee: Matrix Inc
•
Filing: 1991-06-14
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Granted: 1993-11-09
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Expires: 2011-06-14
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Abstract

Abstract A wafer surface treatment apparatus and method used in the apparatus including a treatment tank with a cylindrical inside with a bottom, a circular recess formed in the bottom of the tank, a plurality of lower fluid holes opened in the recess, and a horizontally long opening provided at lower part of the side wall of the tank. A movable wall is tightly but slidably installed in the cylindrical inside of the tank so that the movable wall forms a closed room with the recess when it comes into contact with the bottom of the tank. Also, a plurality of upper fluid holes are provided so as to communicate with the closed room, and a rinsing water and washing liquid supply/discharge device is connected to the upper and lower fluid holes. Surfaces of a semiconductor wafer is treated by placing one wafer in the recess, closing the opening, and then spouting a fluid (washing liquid and rinsing water) onto the both sides of the wafer repeatedly while the wafer is floating and rotated by a spouting force of the fluid in the closed room. The fluid used in the treatment is discharged from the tank while the treatment is being performed.

Inventors

  • 👤 Junichi Tuchida
  • 👤 Toshiyuki Takamatsu

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 09:38
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; H10P72/0411; H10P72/0416; Y; Y10; Y10S; Y10S134/00; Y10S134/902

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 286 words
A surface treatment apparatus for a semiconductor wafer comprising: a treatment tank body made of anti-corrosion material having a cylindrical inside with a vertical axis line, a circular recess substantially coaxial with the cylindrical inside and formed on upper surface of the bottom wall of the treatment tank body, a plurality of lower fluid holes opened in the recess and a horizontally long opening provided at a lower part of side wall of the treatment tank body, an anti-corrosion movable wall which is tightly and slidably inserted in the cylindrical inside of the treatment tank body, forming a closed room with the recess when contacting with the bottom wall of the treatment tank body and is provided with a plurality of upper fluid holes communicated with said closed room, an actuation means for moving the movable wall, at least three support pins vertically penetrating the bottom wall of the treatment tank body for horizontally supporting the wafer inserted in the recess, a first passage member through which the support pin slidably penetrates at near the top end and secured in the lower fluid holes, a second passage member secured at near the bottom end of the support pin, a lift body in a form of a short cylinder secured to the second passage member, a bellows made of anti-corrosion material and provided between the lift body and near the lower fluid holes of the treatment tank body, a connecting member for lifting as one body fitted onto outer surface of the lift body, a lifting means connected to the center of horizontal bottom surface of the connecting member, and a treatment fluid supply/discharge means connected to upper fluid holes and lower end of the lift body.
Claim 2
Dependent Claim 286 words
A surface treatment apparatus for a semiconductor wafer comprising: a treatment tank body made of anti-corrosion material having a cylindrical inside with a vertical axis line, a circular recess substantially coaxial with the cylindrical inside and formed on upper surface of the bottom wall of the treatment tank body, a plurality of lower fluid holes opened in the recess and a horizontally long opening provided at a lower part of side wall of the treatment tank body, an anti-corrosion movable wall which is tightly and slidably inserted in the cylindrical inside of the treatment tank body, forming a closed room with the recess when contacting with the bottom wall of the treatment tank body and is provided with a plurality of upper fluid holes communicated with said closed room, an actuation means for moving the movable wall, at least three support pins vertically penetrating the bottom wall of the treatment tank body for horizontally supporting the wafer inserted in the recess, a first passage member through which the support pin slidably penetrates at near the top end and secured in the lower fluid holes, a second passage member secured at near the bottom end of the support pin, a lift body in a form of a short cylinder secured to the second passage member, a bellows made of anti-corrosion material and provided between the lift body and near the lower fluid holes of the treatment tank body, a connecting member for lifting as one body fitted onto outer surface of the lift body, a lifting means connected to the center of horizontal bottom surface of the connecting member, and a treatment fluid supply/discharge means connected to upper fluid holes and lower end of the lift body.
Claim 3
Dependent Claim 54 words
A surface treatment apparatus for a semiconductor wafer as claimed in claim 1 wherein: at least a part of the upper and lower fluid holes incline to the bottom surface of the recess so that a circumferential component of a force is generated on the wafer due to a rapid flow of the fluid.
Claim 4
Dependent Claim 52 words
A surface treatment apparatus for a semiconductor wafer as claimed in claim 1 further comprising: a another bellows made of anti-corrosion material provided between a circumferential edge of the movable wall and a top edge of the treatment tank body, and a cover tightly fitted on top of the treatment tank body.
Claim 5
Dependent Claim 42 words
A surface treatment apparatus for a semiconductor wafer as claimed in claim 1 further comprising: a another bellows made of anti-corrosion material provided between near lower end of the support pin and near the lower fluid holes of the treatment tank body.

References Cited (Backward Citations)

US4736758A Cited
US4777970A Cited
JPH01270933A Cited
US4922277A Cited
US5169408A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-11-08 1997-05-10 1997-11-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-11-08 2001-05-10 2001-11-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-11-08 2005-05-10 2005-11-09 $7700.00 Window Closed / Lapsed

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