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US5269852A
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US
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Crystalline solar cell and method for producing the same
Assignee: Canon Inc
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Filing: 1992-05-26
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Granted: 1993-12-14
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Expires: 2012-05-26
Abstract
Abstract A crystalline solar cell is formed by growing single crystals on respective plural nucleation areas provided on a non-nucleation surface in such a manner that the neighboring single crystals do not have a crystal grain boundary therebetween. The solar cell comprises an insulation layer having an aperture formed on each of said single crystals. A semiconductor junction is formed at each single crystal at the respective aperture.
Inventors
- 👤 Shoji Nishida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:50
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; H10F19/00; H10F19/20; H10F71/00; H10F71/121; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
72 words
A crystalline solar cell formed by growing single crystals of one conductivity type on respective plural nucleation areas provided on a non-nucleation surface of a substrate in such a manner that the neighboring single crystals do not have a crystal grain boundary therebetween, wherein: an insulation layer having an aperture is formed on each of said single crystals; and a semiconductor junction is formed with each single crystal at the respective aperature.
Claim 2
Dependent Claim
72 words
A crystalline solar cell formed by growing single crystals of one conductivity type on respective plural nucleation areas provided on a non-nucleation surface of a substrate in such a manner that the neighboring single crystals do not have a crystal grain boundary therebetween, wherein: an insulation layer having an aperture is formed on each of said single crystals; and a semiconductor junction is formed with each single crystal at the respective aperature.
Claim 3
Dependent Claim
22 words
A crystalline solar cell according to claim 1, wherein said nucleation areas are arranged in a regular manner in said non-nucleation surface.
Claim 4
Dependent Claim
21 words
A crystalline solar cell according to claim 1, wherein facets of said single crystals stand at sharp angles to said substrate.
Claim 5
Dependent Claim
23 words
A crystalline solar cell according to claim 1, wherein said insulation layer is composed of SiO 2 or Si 3 N 4 .
Claim 6
Dependent Claim
23 words
A crystalline solar cell according to claim 1, wherein said insulation layer has a thickness in the range of 50 to 200 Å.
Claim 7
Dependent Claim
26 words
A crystalline solar cell according claim 1, wherein the dopant impurity used for forming said semiconductor junction is P, As, Sb, B, Al, In, or Ga.
Claim 8
Dependent Claim
21 words
A crystalline solar cell according to claim 1, wherein said semiconductor junction is formed at the surface of said single crystals.
Claim 9
Dependent Claim
27 words
A crystalline solar cell according to claim 1, wherein a semiconductor layer constituting said semiconductor junction has a thickness in the range of 0.05 to 3 μm.
Claim 10
Dependent Claim
24 words
A crystalline solar cell according to claim 1, wherein said single crystals have a grain size in the range of 10 to 500 μm.
Claim 11
Independent Claim
117 words
A method for producing a crystalline solar cell, comprising steps of: forming a plurality of spaced apart nucleation areas in a non-nucleation surface on a substrate; generating and growing semiconductor single crystals of one conductivity type on said nucleation areas by selective crystal growth; terminating the growth of said single crystals before the formation of crystal grain boundaries by mutual contact of the neighboring single crystals; forming an insulation layer on the surface of said single crystals; forming an aperature in said insulation layer at each said single crystal and then forming a semiconductor junction with each single crystal at each said aperture; and successively forming a transparent conductive layer and a current-collecting electrode in said aperatures.
Claim 12
Independent Claim
117 words
A method for producing a crystalline solar cell, comprising steps of: forming a plurality of spaced apart nucleation areas in a non-nucleation surface on a substrate; generating and growing semiconductor single crystals of one conductivity type on said nucleation areas by selective crystal growth; terminating the growth of said single crystals before the formation of crystal grain boundaries by mutual contact of the neighboring single crystals; forming an insulation layer on the surface of said single crystals; forming an aperature in said insulation layer at each said single crystal and then forming a semiconductor junction with each single crystal at each said aperture; and successively forming a transparent conductive layer and a current-collecting electrode in said aperatures.
Claim 13
Dependent Claim
33 words
A method for producing a crystalline solar cell according to claim 10, wherein said step of forming the nucleation areas in the non-nucleation surface comprises forming said nucleation areas in a regular arrangement.
Claim 14
Dependent Claim
33 words
A method for producing a crystalline solar cell according to claim 10, wherein said step of growing the semiconductor single crystals comprises forming the single crystals standing at sharp angles to the substrate.
Claim 15
Dependent Claim
27 words
A method for producing a crystalline solar cell according to claim 10, wherein said insulation layer is composed of SiO 2 or Si 3 N 4 .
Claim 16
Dependent Claim
27 words
A method for producing a crystalline solar cell according to claim 10, wherein said insulation layer has a thickness in the range of 50 to 200 Å.
Claim 17
Dependent Claim
36 words
A method for producing a crystalline solar cell according to claim 10, wherein said step of forming the semiconductor junction is performed by thermal diffusion or ion implantation of an impurity, or by heterogeneous junction formation.
Claim 18
Dependent Claim
30 words
A method for producing a crystalline solar cell according to claim 15, wherein the impurity employed for forming said semiconductor junction is P, As, Sb, B, Al, In, or Ga.
Claim 19
Dependent Claim
32 words
A method for producing a crystalline solar cell according to claim 10, wherein said step of forming the semiconductor junctions comprises forming the semiconductor junction at the surface of said single crystals.
Claim 20
Dependent Claim
31 words
A method for producing a crystalline solar cell according to claim 10, wherein a semiconductor layer constituting said semiconductor junction has a thickness within the range of 0.05 to 3 μm.
Claim 21
Dependent Claim
28 words
A method for producing a crystalline solar cell according to claim 10, wherein said single crystals have a grain size within the range of 10 to 500 μm.
References Cited (Backward Citations)
JPS63182872A
Cited
US5087296A
Cited
JPS6451671A
Cited
JPH01149483A
Cited
US5094697A
Cited
US5098850A
Cited
US5103851A
Cited
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