US5292401A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a fine pattern
Assignee: Mitsubishi Electric Corp
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Filing: 1993-04-08
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Granted: 1994-03-08
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Expires: 2013-04-08
Abstract
Abstract A fine pattern forming apparatus includes a stage and an opposed electrode at least one of which is made of a magnetic material. A magnetic field is applied to this stage or opposed electrode to provide a predetermined gap between the stage and the opposed electrode for a fine pattern formation. In consequence, optimum etching conditions (including etching uniformity, etch rate and etching direction) can be assured without generating dust. As a result, damage caused by the plasma can be reduced, and the etch rate can be increased.
Inventors
- 👤 Masahiro Yoneda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:45
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; H01J37/3255; H01J37/32568; H01J2237/00; H01J2237/02; H01J2237/022; H01J2237/20
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
108 words
A fine pattern forming method comprising the steps of: placing a sample on which a fine pattern is to be formed on a stage in a vacuum chamber; evacuating the interior of said vacuum chamber to achieve a predetermined degree of vacuum; supplying a reactive gas into said vacuum chamber; applying a magnetic field to levitate one of said stage and an opposed electrode located in said vacuum chamber to maintain a predetermined gap between said stage and said opposed electrode; and generating a plasma of said reactive gas within said vacuum chamber by said stage and said opposed electrode, thereby forming a fine pattern in said sample.
Claim 2
Dependent Claim
108 words
A fine pattern forming method comprising the steps of: placing a sample on which a fine pattern is to be formed on a stage in a vacuum chamber; evacuating the interior of said vacuum chamber to achieve a predetermined degree of vacuum; supplying a reactive gas into said vacuum chamber; applying a magnetic field to levitate one of said stage and an opposed electrode located in said vacuum chamber to maintain a predetermined gap between said stage and said opposed electrode; and generating a plasma of said reactive gas within said vacuum chamber by said stage and said opposed electrode, thereby forming a fine pattern in said sample.
Claim 3
Dependent Claim
20 words
A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a plasma etching method.
Claim 4
Dependent Claim
21 words
A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a reactive ion etching method.
Claim 5
Dependent Claim
24 words
A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a magnetic field supported reactive ion etching method.
Claim 6
Dependent Claim
22 words
A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a electron cyclotron plasma etching method.
Claim 7
Dependent Claim
21 words
A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a neutral beam etching method.
Claim 8
Dependent Claim
21 words
A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a light excited etching method.
Claim 9
Dependent Claim
21 words
A fine pattern forming method according to claim 1, wherein said fine pattern forming method is a light supported etching method.
Claim 10
Dependent Claim
20 words
A fine pattern forming method according to claim 1 wherein said fine pattern forming method is a sputter etching method.
References Cited (Backward Citations)
US4351805A
Cited
JPS5817018A
Cited
JPS5994422A
Cited
EP0132538A1
Cited
US4563240A
Cited
JPS6062460A
Cited
JPS60195938A
Cited
JPS6187884A
Cited
JPS61227169A
Cited
JPS6257214A
Cited
JPS63219137A
Cited
JPH01107539A
Cited
JPH01279783A
Cited
JPH02229442A
Cited
DE3914065A1
Cited
DE3935189A1
Cited
DE4128780A1
Cited
DE4128779A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-07 | 1997-09-06 | 1998-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-07 | 2001-09-06 | 2002-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-07 | 2005-09-06 | 2006-03-08 | $7700.00 | Window Closed / Lapsed |