US5301144A
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US
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Semiconductor memory device having a decoding circuit for reducing electric field stress applied to memory cells
Assignee: NEC Electronics Corp
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Filing: 1991-07-16
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Granted: 1994-04-05
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Expires: 2011-07-16
Abstract
Abstract Electric field stress applied to memory cells is relieved in a semiconductor memory device. For this purpose, an X-decoder circuit applies a low level signal to a selected memory cell in a selected memory cell block of a selected memory cell matrix, and a high level signal to non-selected memory cells in the selected memory cell block, while the X-decoder circuit applies the low level signal to memory cells of non-selected memory cell blocks of the selected memory cell matrix and memory cells of non-selected memory cell matrices.
Inventors
- 👤 Takaki Kohno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:12
CPC Classifications
G; G11; G11C; G11C17/00; G11C17/08; G11C17/10; G11C17/12; G11C17/123
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
291 words
A semiconductor memory device comprising: a memory cell unit comprising a plurality of memory cell groups, each of said memory cell groups comprising a plurality of memory cell blocks, each of said memory cell blocks comprising a predetermined number of memory cells which are respectively connected to a predetermined number of word lines and serially connected between a digit line and a fixed potential, each of said predetermined number of memory cells including a transistor for storing information according to first and second threshold voltages, said first threshold voltage being higher than said second threshold voltage; first means for selecting one memory cell group from said plurality of memory cell groups according to an address signal; second means for selecting one memory cell block from said plurality of memory cell blocks in said one memory cell group according to said address signal; and third means for selecting one memory cell from said predetermined number of memory cells in said one memory cell block according to said address signal wherein, in an active mode, said third means applies a first voltage to said one memory cell and a second voltage to said predetermined number of memory cells excluding said one memory cell in said one memory cell block, said first voltage being lower than said first threshold voltage and higher than said second threshold voltage and said second voltage being higher than said first threshold voltage, and said third means applies said first voltage to memory cells in said plurality of memory cell blocks excluding said one memory cell block and in said plurality of memory cell groups excluding said one memory cell group, and, in a standby mode, said third means applies the first voltage to all of said memory cells.
Claim 2
Dependent Claim
291 words
A semiconductor memory device comprising: a memory cell unit comprising a plurality of memory cell groups, each of said memory cell groups comprising a plurality of memory cell blocks, each of said memory cell blocks comprising a predetermined number of memory cells which are respectively connected to a predetermined number of word lines and serially connected between a digit line and a fixed potential, each of said predetermined number of memory cells including a transistor for storing information according to first and second threshold voltages, said first threshold voltage being higher than said second threshold voltage; first means for selecting one memory cell group from said plurality of memory cell groups according to an address signal; second means for selecting one memory cell block from said plurality of memory cell blocks in said one memory cell group according to said address signal; and third means for selecting one memory cell from said predetermined number of memory cells in said one memory cell block according to said address signal wherein, in an active mode, said third means applies a first voltage to said one memory cell and a second voltage to said predetermined number of memory cells excluding said one memory cell in said one memory cell block, said first voltage being lower than said first threshold voltage and higher than said second threshold voltage and said second voltage being higher than said first threshold voltage, and said third means applies said first voltage to memory cells in said plurality of memory cell blocks excluding said one memory cell block and in said plurality of memory cell groups excluding said one memory cell group, and, in a standby mode, said third means applies the first voltage to all of said memory cells.
Claim 3
Dependent Claim
58 words
A semiconductor memory device according to claim 1 wherein said third means includes a plurality of serially connected first and second transistors respectively coupled to said word lines and alternately turned on and off according to said address signal and a chip enable signal, said first and second transistors being respectively coupled to said first and second voltages.
Claim 4
Dependent Claim
46 words
A semiconductor memory device according to claim 1 wherein said third means includes a voltage control circuit respectively coupled between the first and second transistors and said word lines for controlling said second voltage to be lower than a power supply voltage to a predetermined extent.
Claim 5
Dependent Claim
226 words
A semiconductor memory device comprising: a plurality of memory cell blocks, each memory cell block including a plurality of memory cell transistors serially coupled between a digit line and a fixed potential, each memory cell transistor having a control input and storing information according to first and second voltage thresholds; a memory cell block selecting means coupled to the digit line for selecting one of the plurality of memory cell blocks; and an address decoding circuit responsive to a plurality of address signals and a chip enable signal and having a plurality outputs respectively coupled to the control input of the memory cell transistors for decoding the plurality of address signals including: a standby mode, responsive to the chip enable signal being inactive, for maintaining all of the control inputs at a first voltage potential, and an active mode, responsive to the chip enable signal being active, for maintaining the control input of one memory cell transistor from one memory cell block at the first voltage potential, maintaining the control input of the other memory cell transistors from the one memory cell block at a second voltage potential and maintaining the control input of the memory cell transistors from the other memory cell blocks excluding the one memory cell block at the first voltage potential, the second voltage potential being higher than the first voltage potential.
Claim 6
Dependent Claim
226 words
A semiconductor memory device comprising: a plurality of memory cell blocks, each memory cell block including a plurality of memory cell transistors serially coupled between a digit line and a fixed potential, each memory cell transistor having a control input and storing information according to first and second voltage thresholds; a memory cell block selecting means coupled to the digit line for selecting one of the plurality of memory cell blocks; and an address decoding circuit responsive to a plurality of address signals and a chip enable signal and having a plurality outputs respectively coupled to the control input of the memory cell transistors for decoding the plurality of address signals including: a standby mode, responsive to the chip enable signal being inactive, for maintaining all of the control inputs at a first voltage potential, and an active mode, responsive to the chip enable signal being active, for maintaining the control input of one memory cell transistor from one memory cell block at the first voltage potential, maintaining the control input of the other memory cell transistors from the one memory cell block at a second voltage potential and maintaining the control input of the memory cell transistors from the other memory cell blocks excluding the one memory cell block at the first voltage potential, the second voltage potential being higher than the first voltage potential.
Claim 7
Dependent Claim
251 words
The semiconductor memory device of claim 4 wherein the plurality of address signals include first and second address signals and wherein each memory cell block includes first to fourth memory cell transistors and a block selection transistor, the first to fourth memory cell transistors and the block selection transistor being serially connected between the digit line and the fixed potential, wherein in the active mode: when the first and second address signals are inactive, the control input of the first memory cell transistor is at the first voltage potential and the control inputs of the second to fourth memory cell transistors are at the second voltage level, when the first address signal is active and the second address signal is inactive, the control input of the second memory cell transistor is at the first voltage potential and the control inputs of the first, third, and fourth memory cell transistors are at the second voltage level, when the first address signal is inactive and the second address signal is active, the control input of the third memory cell transistor is at the first voltage potential and the control inputs of the first, second, and fourth memory cell transistors are at the second voltage level, and when the first address signal is active and the second address signal is active, the control input of the fourth memory cell transistor is at the first voltage potential and the control inputs of the first to third memory cell transistors are at the second voltage level.
Claim 8
Dependent Claim
59 words
The semiconductor memory device of claim 4 wherein the address decoding circuit includes a voltage control circuit connected to the control inputs of the plurality of memory cell transistors for controlling the second voltage to be lower than a power supply voltage and higher than a threshold voltage of an N-channel MOS enhancement transistor for reducing electric field stress.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-04 | 1997-10-04 | 1998-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-04 | 2001-10-04 | 2002-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-04 | 2005-10-04 | 2006-04-05 | $7700.00 | Window Closed / Lapsed |