Patent US5318877A successfully refreshed from Google Patents.
US5318877A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bilayer resist and process for preparing same
Assignee: Cornell Research Foundation Inc
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Filing: 1993-11-22
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Granted: 1994-06-07
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Expires: 2013-11-22
Abstract
Abstract A resist pattern on a substrate is formed using an imageable resist layer on the surface of a substrate. The imageable resist layer comprises a silicon-incorporated polystyrene-diene block copolymer having a silicon weight percent of at least about 5 percent. The imageable layer is prepared by reacting a polystyrene-diene block copolymer with a silicon-containing compound in the presence of a platinum catalyst. In a preferred embodiment, the poly(styrene)-diene block copolymers are hydrosilylated by hydrosiloxanes using a platinum-divinyl tetramethyl disiloxane catalyst.
Inventors
- 👤 Christopher K. Ober
- 👤 Allen H. Gabor
- 👤 Eric A. Lehner
- 👤 Guoping Mao
- 👤 Lizabeth A. Schneggenburger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:15
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
64 words
A microelectronic device comprising: a semiconductor substrate having a face; an imageable layer on said face, the imageable layer comprising a silicon-incorporated polystyrene-diene block copolymer having silicon present in the block copolymer in an amount sufficient to form silicon oxides in the presence of a gas plasma in an amount sufficient to resist etching of the block copolymer upon exposure to the gas plasma.
Claim 2
Dependent Claim
64 words
A microelectronic device comprising: a semiconductor substrate having a face; an imageable layer on said face, the imageable layer comprising a silicon-incorporated polystyrene-diene block copolymer having silicon present in the block copolymer in an amount sufficient to form silicon oxides in the presence of a gas plasma in an amount sufficient to resist etching of the block copolymer upon exposure to the gas plasma.
Claim 3
Dependent Claim
22 words
The device according to claim 1 wherein the silicon weight percent of the silicon-incorporated block copolymer is a least about 5 percent.
Claim 4
Dependent Claim
21 words
The device according to claim 1 further comprising an intermediate planarizing layer between said imageable resist layer and said substrate face.
Claim 5
Dependent Claim
23 words
The device according to claim 1 wherein said polystyrene-diene block copolymer is selected from the group consisting of polystyrene-butadiene and polystyrene-isoprene block copolymers.
Claim 6
Dependent Claim
37 words
A microelectronic device comprising: a semiconductor substrate having a face; a planarizing layer on said face; and an imageable layer comprising a silicon-incorporated polystyrene-diene block copolymer having a silicon weight percent of at least about 5 percent.
Claim 7
Dependent Claim
37 words
A microelectronic device comprising: a semiconductor substrate having a face; a planarizing layer on said face; and an imageable layer comprising a silicon-incorporated polystyrene-diene block copolymer having a silicon weight percent of at least about 5 percent.
Claim 8
Dependent Claim
77 words
A process for preparing a silicon-incorporated polymer which is particularly useful as an imageable layer in microelectronic device fabrication, the process comprising: reacting a polystyrene-diene block copolymer with a silicon-containing compound in the presence of a platinum catalyst, wherein the amount of silicon used is sufficient to form a silicon-incorporated polystyrene-diene block copolymer that upon exposure to gas plasma forms silicon oxides in an amount sufficient to resist etching of the block copolymer in the gas plasma.
Claim 9
Dependent Claim
77 words
A process for preparing a silicon-incorporated polymer which is particularly useful as an imageable layer in microelectronic device fabrication, the process comprising: reacting a polystyrene-diene block copolymer with a silicon-containing compound in the presence of a platinum catalyst, wherein the amount of silicon used is sufficient to form a silicon-incorporated polystyrene-diene block copolymer that upon exposure to gas plasma forms silicon oxides in an amount sufficient to resist etching of the block copolymer in the gas plasma.
Claim 10
Dependent Claim
33 words
The process according to claim 6 wherein the amount of silicon used is an amount that will provide a silicon weight percent of at least 5 percent in the resulting silicon-incorporated block copolymer.
Claim 11
Dependent Claim
31 words
The process according to claim 6 wherein the reacting step comprises reacting a polystyrene-diene block copolymer selected from the group consisting of polystyrene-butadiene and polystyrene-isoprene block copolymers with a silicon-containing compound.
Claim 12
Dependent Claim
20 words
The process according to claim 6 wherein the reacting step comprises reacting a polystyrene-diene block copolymer with a hydrosiloxane compound.
Claim 13
Dependent Claim
30 words
The process according to claim 9 wherein the reacting step comprises reacting a polystyrene-diene block copolymer with a hydrosiloxane compound selected from the group consisting of pentamethyldisiloxane, 1,1,1,3,5,5,5-heptamethyltrisiloxane, and 1,1,1,3,3,5,5-heptamethyltrisiloxane.
Claim 14
Dependent Claim
19 words
The process according to claim 6 wherein the reacting step comprises hydrosilylating the block copolymer with the silicon-containing compound.
Claim 15
Dependent Claim
17 words
The process according to claim 6 wherein the platinum catalyst is a platinum divinyl tetramethyl disiloxane complex.
Claim 16
Dependent Claim
49 words
An imageable resist composition comprising a silicon-incorporated polystyrene-diene block copolymer having silicon present in the block copolymer in an amount sufficient to form silicon oxides in the presence of a gas plasma in an amount sufficient to resist etching of the block copolymer upon exposure to the gas plasma.
Claim 17
Dependent Claim
49 words
An imageable resist composition comprising a silicon-incorporated polystyrene-diene block copolymer having silicon present in the block copolymer in an amount sufficient to form silicon oxides in the presence of a gas plasma in an amount sufficient to resist etching of the block copolymer upon exposure to the gas plasma.
Claim 18
Dependent Claim
21 words
The composition according to claim 13 wherein the silicon weight of the silicon-incorporated block copolymer is at least about five percent.
Claim 19
Dependent Claim
17 words
The composition according to claim 13 wherein said silicon-incorporated polystyrene-diene block copolymer is a hydrosilylation reaction product.
Claim 20
Dependent Claim
23 words
The composition according to claim 13 wherein said polystyrene-diene block copolymer is selected from the group consisting of polystyrene-butadiene and polystyrene-isoprene block copolymers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-06 | 1997-12-06 | 1998-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-06 | 2001-12-06 | 2002-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-06 | 2005-12-06 | 2006-06-07 | $7700.00 | Window Closed / Lapsed |