US5334544A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making thin film transistors
Assignee: Panasonic Holdings Corp
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Filing: 1993-07-30
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Granted: 1994-08-02
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Expires: 2013-07-30
Abstract
Abstract A method of making thin film transistors such that the first conductive layer of a thin film transistor is formed with an aluminum system metal having a low electric resistance, and another metal capable of anodic oxidation is deposited to prevent the aluminum system metal from producing hillocks. The metal capable of anodic oxidation and part of the aluminum system metal are changed into an insulator by an anodic oxidation treatment. In all, the gate insulator of the thin film transistor comprises three layers of aluminum oxide, an oxide of the metal capable of anodic oxidation, and silicon nitride. The method makes it possible to form the lower-layer wiring and gate electrode having a low electric resistance and a flawless gate insulator having excellent insulative quality.
Inventors
- 👤 Tomizo Matsuoka
- 👤 Mamoru Takeda
- 👤 Ikunori Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:45
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/00; H10D64/01; H10D64/013; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136286; G02F1/136295; Y; Y10; Y10S; Y10S148/00; Y10S148/118
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
195 words
A manufacturing method of a thin film transistor which comprises a first conductive layer composed of a conductive material selectively deposited on a transparent insulative substrate, an insulating layer covering the exposed surface of said substrate and said first conductive layer, a semiconductive layer covering a particular surface of said insulating layer, a pair of second conductive layers formed overlapping said semiconductive layer partially, and a transparent conductive layer electrically contacting with one of said second conductive layers, being characterized by forming a first thin film of an aluminum system metal on said transparent insulative substrate as said first conductive layer, forming a second thin film of a metal other than said aluminum system metal on said first conductive layer, said metal being anodic-oxidizable, anodic-oxidizing said thin film of a metal other than said aluminum system and part of said aluminum system metal and, thereby, forming a first insulating layer on said first conductive layer, and depositing a thin film of silicon nitride as a second insulating layer on said first insulating layer, said first and second insulating layers forming said insulating layer covering the exposed surface of said substrate and said first conductive layer.
Claim 2
Dependent Claim
195 words
A manufacturing method of a thin film transistor which comprises a first conductive layer composed of a conductive material selectively deposited on a transparent insulative substrate, an insulating layer covering the exposed surface of said substrate and said first conductive layer, a semiconductive layer covering a particular surface of said insulating layer, a pair of second conductive layers formed overlapping said semiconductive layer partially, and a transparent conductive layer electrically contacting with one of said second conductive layers, being characterized by forming a first thin film of an aluminum system metal on said transparent insulative substrate as said first conductive layer, forming a second thin film of a metal other than said aluminum system metal on said first conductive layer, said metal being anodic-oxidizable, anodic-oxidizing said thin film of a metal other than said aluminum system and part of said aluminum system metal and, thereby, forming a first insulating layer on said first conductive layer, and depositing a thin film of silicon nitride as a second insulating layer on said first insulating layer, said first and second insulating layers forming said insulating layer covering the exposed surface of said substrate and said first conductive layer.
Claim 3
Dependent Claim
36 words
The manufacturing method of a thin film transistor as defined in claim 1 wherein said second thin film is made of a metal chosen from the group consisting of Ta, Ti, Zr, Nb, W, and Mo.
Claim 4
Dependent Claim
39 words
The manufacturing method of a thin film transistor as defined in claim 1 wherein said first thin film is made of a metal selected from the group consisting of pure aluminum and aluminum containing a small amount of silicon.
Claim 5
Dependent Claim
28 words
The manufacturing method of a thin film transistor as defined in claim 1 wherein the thickness of said second thin film ranges from 30 nm to 100 nm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-01 | 1998-01-31 | 1998-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-01 | 2002-01-31 | 2002-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-01 | 2006-01-31 | 2006-08-02 | $7700.00 | Window Closed / Lapsed |