Patent US5352291A successfully refreshed from Google Patents.
US5352291A
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Method of annealing a semiconductor
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1993-08-11
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Granted: 1994-10-04
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Expires: 2013-08-11
Abstract
Abstract A process for crystallizing an amorphous semiconductor by irradiating a laser beam thereto, which comprises thermally annealing the amorphous semiconductor prior to the crystallization thereof in vacuum or in an inactive gas atmosphere at a temperature not higher than the crystallization temperature of the amorphous semiconductor, and then irradiating a laser beam to the thermally annealed amorphous semiconductor in vacuum or in an inactive gas atmosphere to crystallize the amorphous semiconductor. The process provides a uniform polycrystalline silicon film having high crystallinity, which has less dependence on the energy density of the laser beam which is irradiated thereto for crystallization, and hence useful for thin film devices such as insulated gate field effect transistors.
Inventors
- 👤 Hongyong Zhang
- 👤 Naoto Kusumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:59
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B1/023; C30B29/00; C30B29/02; C30B29/06; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
63 words
A method for forming a crystalline semiconductor comprising the steps of: forming an amorphous semiconductor: heat treating said amorphous semiconductor at a temperature not higher than a crystallization temperature of said amorphous semiconductor in order to discharge hydrogen contained in said amorphous semiconductor; and then irradiating said amorphous semiconductor with a laser after heat treating said amorphous semiconductor to crystallize said amorphous semiconductor.
Claim 2
Independent Claim
63 words
A method for forming a crystalline semiconductor comprising the steps of: forming an amorphous semiconductor: heat treating said amorphous semiconductor at a temperature not higher than a crystallization temperature of said amorphous semiconductor in order to discharge hydrogen contained in said amorphous semiconductor; and then irradiating said amorphous semiconductor with a laser after heat treating said amorphous semiconductor to crystallize said amorphous semiconductor.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein said laser light is an excimer laser light.
Claim 4
Dependent Claim
24 words
The method of claim 1 wherein the step of heat treating said amorphous semiconductor is performed in a vacuum or in an inactive atmosphere.
Claim 5
Dependent Claim
18 words
The method of claim 3 wherein said inactive atmosphere of said heating treating step comprises N 2 .
Claim 6
Dependent Claim
15 words
The method of claim 1 wherein said amorphous semiconductor is formed by a CVD method.
Claim 7
Dependent Claim
13 words
The method of claim 1 wherein said amorphous semiconductor is formed by sputtering.
Claim 8
Dependent Claim
21 words
The method of claim 1 wherein the step of heat treating said semiconductor is carried out by using an infrared light.
Claim 9
Independent Claim
96 words
A method for forming a crystalline semiconductor comprising the steps of: thermally annealing an amorphous semiconductor in vacuum or inactive atmosphere in a first chamber at a temperature not higher than a crystallization temperature of said amorphous semiconductor in order to discharge hydrogen contained in said amorphous semiconductor; transferring said amorphous semiconductor from said first chamber to a second chamber connected to said first chamber without exposing said amorphous semiconductor to an air; and then irradiating said amorphous semiconductor with a laser in vacuum or inactive atmosphere in said second chamber to crystallize said amorphous semiconductor.
Claim 10
Independent Claim
96 words
A method for forming a crystalline semiconductor comprising the steps of: thermally annealing an amorphous semiconductor in vacuum or inactive atmosphere in a first chamber at a temperature not higher than a crystallization temperature of said amorphous semiconductor in order to discharge hydrogen contained in said amorphous semiconductor; transferring said amorphous semiconductor from said first chamber to a second chamber connected to said first chamber without exposing said amorphous semiconductor to an air; and then irradiating said amorphous semiconductor with a laser in vacuum or inactive atmosphere in said second chamber to crystallize said amorphous semiconductor.
Claim 11
Dependent Claim
14 words
The method of claim 8 wherein said laser light is an excimer laser light.
Claim 12
Dependent Claim
18 words
The method of claim 8 wherein said inactive atmosphere of said thermally annealing step comprises N 2 .
Claim 13
Independent Claim
52 words
A method for forming a crystalline semiconductor comprising the steps of: forming an amorphous semiconductor; heat treating said amorphous semiconductor at a temperature not higher than a crystalline temperature of said amorphous semiconductor in order to discharge hydrogen contained in said amorphous semiconductor; and then crystallizing said amorphous semiconductor after heat treating.
Claim 14
Independent Claim
52 words
A method for forming a crystalline semiconductor comprising the steps of: forming an amorphous semiconductor; heat treating said amorphous semiconductor at a temperature not higher than a crystalline temperature of said amorphous semiconductor in order to discharge hydrogen contained in said amorphous semiconductor; and then crystallizing said amorphous semiconductor after heat treating.
Claim 15
Independent Claim
51 words
A method for forming a crystalline semiconductor comprising the steps of: forming an amorphous semiconductor; heat treating said amorphous semiconductor in order to form dangling bonds in said amorphous semiconductor at a sufficiently low temperature not to initiate a crystallization of said film; and then crystallizing said amorphous semiconductor after heat.
Claim 16
Independent Claim
51 words
A method for forming a crystalline semiconductor comprising the steps of: forming an amorphous semiconductor; heat treating said amorphous semiconductor in order to form dangling bonds in said amorphous semiconductor at a sufficiently low temperature not to initiate a crystallization of said film; and then crystallizing said amorphous semiconductor after heat.
Claim 17
Dependent Claim
19 words
The method of claim 12 wherein said step of crystallizing said is performed by irradiating said with a laser.
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