Semiconductor memory device having an energy gap for high speed operation

Claim 2

A semiconductor memory device comprising at least one memory cell which is formed on a semiconductor substrate of a first conductivity type and comprises a drain region of a second conductivity type which is formed selectively on a surface location of the semiconductor substrate, an insulating layer which is formed on the semiconductor substrate, overlaying, at least partly, an edge of the drain region, and a gate electrode which is formed on the insulating layer, wherein: an energy gap between the conduction band and the valence band of a semiconductor section including the drain region and the semiconductor substrate is preset to a value not more than an energy gap value corresponding to a first set voltage difference between the drain region and the gate electrode, and either an energy gap between the valence band of the insulating layer and the valence band of the semiconductor section or an energy gap between the conduction band of the insulating layer and the conduction band of the semiconductor section, at the interface between the semiconductor section and the insulating layer, is preset to an energy gap value corresponding to a second set voltage difference between the drain region and the semiconductor substrate which varies, depending on the voltage of the gate electrode, the memory cell is capable of storing information in a nonvolatic manner "1" or "0", in which "1" means a state of holding charges in the insulating layer and "0" means a state of not-holding charges therein, at least one memory cell is previously in the state of "1", and erase means is provided, which imposes between both faces of the insulating layer of the memory cell which holds charges and is in the state of "1" a high electric field to generate a Fowler-Nordheim current to implant charges, which have a reverse polarity with respect to the charges trapped, into the insulating layer thereby shifting the memory cell into the state of "0".

Claim 3

A semiconductor memory device comprising at least one memory cell which is formed on a semiconductor substrate of a first conductivity type and comprises a drain region of a second conductivity type which is formed selectively on a surface location of the semiconductor substrate, an insulating layer which is formed on the semiconductor substrate, overlaying, at least partly, an edge of the drain region, and a gate electrode which is formed on the insulating layer, wherein: an energy gap between the conduction band and the valence band of a semiconductor section including the drain region and the semiconductor substrate is preset to a value not more than an energy gap value corresponding to a first set voltage difference between the drain region and the gate electrode, and either an energy gap between the valence band of the insulating layer and the valence band of the semiconductor section or an energy gap between the semiconductor band of the insulating layer and the conduction band of the semiconductor section and the insulating layer, is reset to an energy gap value corresponding to a second set voltage difference between the drain region and the semiconductor substrate which varies, depending on the voltage of the gate electrode, the memory cell is capable of storing information in a nonvolatic manner "1" or "0", in which "1" means a state of holding charges in the insulating layer and "0" means a state of not-holding charges therein, read means is provided, which applies between the drain region and the gate electrode a voltage not less than the first set voltage difference while applying between the drain region and the semiconductor substrate a voltage lower than the second set voltage difference to read the contents of a memory by sensing a gate induced drain leakage current value, write means is provided, which applies between the drain region and the gate electrode a voltage not less than the first set voltage difference while applying between the drain region and the semiconductor substrate a voltage not less than the second set voltage difference to generate a gate induced drain leakage current thereby causing charges to be trapped in the insulating layer, and erase means is provided, which erases the charge trapped in the insulated layer of the memory cell which is in the state of "1" thereby shifting the memory cell to the state of "0".

Claim 4

A semiconductor memory device comprising at least one memory cell which is formed on a semiconductor substrate of a first conductivity type and comprises a drain region of a second conductivity type which is formed selectively on a surface location of the semiconductor substrate, an insulating layer which is formed on the semiconductor substrate, overlaying, at least partly, an edge of the drain region, and a gate electrode which is formed on the insulating layer, wherein: an energy gap between the conduction band and the valence band of a semiconductor section including the drain region and the semiconductor substrate is preset to a value not more than an energy gap value corresponding to a first set voltage difference between the drain region and the gate electrode, and either an energy gap between the valence band of the insulating layer and the valence band of the semiconductor section or an energy gap between the semiconductor band of the insulating layer and the conduction band of the semiconductor section and the insulating layer, is reset to an energy gap value corresponding to a second set voltage difference between the drain region and the semiconductor substrate which varies, depending on the voltage of the gate electrode, the memory cell is capable of storing information in a nonvolatic manner "1" or "0", in which "1" means a state of holding charges in the insulating layer and "0" means a state of not-holding charges therein, read means is provided, which applies between the drain region and the gate electrode a voltage not less than the first set voltage difference while applying between the drain region and the semiconductor substrate a voltage lower than the second set voltage difference to read the contents of a memory by sensing a gate induced drain leakage current value, write means is provided, which applies between the drain region and the gate electrode a voltage not less than the first set voltage difference while applying between the drain region and the semiconductor substrate a voltage not less than the second set voltage difference to generate a gate induced drain leakage current thereby causing charges to be trapped in the insulating layer, and erase means is provided, which erases the charge trapped in the insulated layer of the memory cell which is in the state of "1" thereby shifting the memory cell to the state of "0".

Claim 5

The semiconductor memory device of claim 2, wherein: each memory cell is previously in the state of "1".

Claim 6

The semiconductor memory device of claim 2, wherein: at least four memory cells are provided, at least two word lines and at least two bit lines are provided in which each word line is connected to the gate electrodes of at least two of the memory cells while each bit line is connected to the drain regions of at least two of the memory cells, and the write means and the read means carry out a selective write operation and a selective read operation respectively, wherein a selective word line voltage Vkcw and a nonselective word line voltage Vknw for a write operation; a selective word line voltage Vycw and a non-selective word line voltage Vynw for a read operation; a selective bit line voltage Vkcb and a non-selective bit line voltage Vknb for a write operation; and a selective bit line voltage Vycb and a non-selective bit line voltage Vynb for a read operation are set either according to Vkcw=Vycw<Vknw=Vynw and Vknb=Vynb<Vycb<Vkcb for a p-type substrate or according to Vkcw=Vycw>Vknw=Vynw and Vknb=Vynb>Vycb>Vkcb for an n-type substrate, and the set voltages of the word lines comprise two values while the set voltages of the bit lines comprise three values.

Claim 7

The semiconductor memory device of claim 2, wherein: at least four memory cells are provided, at least two word lines and at least two bit lines are provided in which each word line is connected to the gate electrodes of at least two of the memory cells while each bit line is connected to the drain regions of at least two of the memory cells, and the write means and the read means carry out a selective write operation and a selective read operation respectively, wherein a selective word line voltage Vkcw and a non-selective word line voltage Vknw for a write operation; a selective word line voltage Vycw and a non-selective word line voltage Vynw for a read operation; a selective bit line voltage Vkcb and a non-selective bit line voltage Vknb for a write operation; and a selective bit line voltage Vycb and a non-selective bit line voltage Vynb for a read operation are set either according to Vkcw<Vknw=Vycw<Vynw and Vknb=Vynb<Vkcb=Vycb for a p-type substrate or according to Vkcw>Vknw=Vycw>Vynw and Vknb=Vynb>Vkcb=Vycb for an n-type substrate, and the set voltages of the word lines comprise three values while the set voltages of the bit lines comprise two values.

Claim 8

The semiconductor memory device of either claim 1 or claim 2, wherein: at least four memory cells are provided, at least two word lines and at least two bit lines are provided in which each word line is connected to the gate electrodes of at least two of the memory cells while each bit line is connected to the drain regions of at least two of the memory cells, and the erase means selectively erases the contents of a memory wherein a selective word line voltage Vscw, a non-selective word line voltage Vsnw, a selective bit line voltage Vscb and a non-selective bit line voltage Vsnb are set either according to Vscw>Vsnw and Vsnb>Vscb for a p-type substrate or according to Vscw<Vsnw and Vsnb<Vscb for an n-type substrate, and the set voltages of the word lines comprise two values while the set voltages of the bit lines comprise two values.

Claim 9

The semiconductor memory device of either claim 2. wherein: at least four memory cells are provided, at least two word lines and at least two bit lines are provided in which each word line is connected to the gate electrodes of at least two of the memory cells while each bit line is connected to the drain regions of at least two of the memory cells, and the write means, the read means and the erase means carry out a selective write operation, a selective read operation and a selective erase operation respectively, wherein a selective word line voltage Vkcw and a non-selective word line voltage Vknw for a write operation; a selective word line voltage Vycw and a non-selective word line voltage Vynw for a read operation; a selective word line voltage Vscw and a non-selective word line voltage Vsnw for an erase operation; a selective bit line voltage Vkcb and a non-selective bit line voltage Vknb for a write operation; a selective bit line voltage Vycb and a non-selective bit line voltage Vynb for a read operation; and a selective bit line voltage Vscb and a non-selective bit line voltage Vsnb for an erase operation are set either according to Vkcw=Vycw<Vknw=Vynw=Vsnw<Vscw and Vknb=Vynb=Vscb<Vycb Vkcb=Vsnb for a p-type substrate or according to Vkcw= Vycw>Vknw=Vynw=Vsnw>Vscw and Vknb=Vynb=Vscb>Vycb>Vkcb=Vsnb for an n-type substrate, and the set voltages of the word lines comprise three values while the set voltages of the bit lines comprise three values.

Claim 10

The semiconductor memory device of claim 2, wherein: at least four memory cells are provided, at least two word lines and at least two bit lines are provided in which each word line is connected to the gate electrodes of at least two of the memory cells while each bit line is connected to the drain regions of at least two of the memory cells, and the write means, the read means and the erase means carry out a selective write operation, a selective read operation and a selective erase operation respectively wherein a selective word line voltage Vkcw and a non-selective word line voltage Vknw for a write operation; a selective word line voltage Vycw and a non-selective word line voltage Vynw for a read operation; a selective word line voltage Vscw and a non-selective word line voltage Vsnw for an erase operation; a selective bit line voltage Vkcb and a non-selective bit line voltage Vknb for a write operation; a selective bit line voltage Vycb and a non-selective bit line voltage Vynb for a read operation; and a selective bit line voltage Vscb and a non-selective bit line voltage Vsnb for an erase operation are set either according to Vkcw<Vknw=Vycw=Vsnw<Vynw<Vscw and Vknb=Vynb=Vscb<Vkcb=Vycb=Vsnb for a p-type substrate or according to Vkcw>Vknw=Vycw=Vsnw>Vynw>Vscw and Vknb=Vynb=Vscb>Vkcb=Vycb=Vsnb for an n-type substrate, and the set voltages of the word lines comprise four values while the set voltages of the bit lines comprise two values.

Claim 11

A semiconductor memory device comprising at least one memory cell which is formed on a semiconductor substrate of a first conductivity type and comprises a drain region of a second conductivity type which is selectively formed on a surface location of the semiconductor substrate, a source region of a second conductivity type which is selectively formed on a surface location of the semiconductor substrate, being spaced a given distance away from the drain region, an insulating layer which is formed on the semiconductor substrate, overlaying, at least partly, an edge of the drain region and extending to an edge of the source region, and a gate electrode which is formed on the insulating layer, wherein: an energy gap between the conduction band and the valence band of a semiconductor section including the drain region and the semiconductor substrate is preset to a value not more than an energy gap value corresponding to a first set voltage difference between the drain region and the gate electrode, and either an energy gap between the valence band of the insulating layer and the valence band of the semiconductor section or an energy gap between the conduction band of the insulating layer and the conduction band of the semiconductor section, at the interface between the semiconductor section and the insulating layer, is preset to an energy gap value corresponding to a second set voltage difference between the drain region and the semiconductor substrate which varies, depending on the voltage of the gate electrode, the memory cell is capable of storing information in a nonvolatic manner "1" or "0", in which "1" means a state of holding charges in the insulating layer and "0" means a state of not-holding charges therein, at least one memory cell is previously in the state of "1", and erase means is provided, which erases the charge trapped in the insulating layer of the memory cell which is in the state of "1" thereby shifting the memory cell into the state of "0".

Claim 12

A semiconductor memory device comprising at least one memory cell which is formed on a semiconductor substrate of a first conductivity type and comprises a drain region of a second conductivity type which is selectively formed on a surface location of the semiconductor substrate, a source region of a second conductivity type which is selectively formed on a surface location of the semiconductor substrate, being spaced a given distance away from the drain region, an insulating layer which is formed on the semiconductor substrate, overlaying, at least partly, an edge of the drain region and extending to an edge of the source region, and a gate electrode which is formed on the insulating layer, wherein: an energy gap between the conduction band and the valence band of a semiconductor section including the drain region and the semiconductor substrate is preset to a value not more than an energy gap value corresponding to a first set voltage difference between the drain region and the gate electrode, and either an energy gap between the valence band of the insulating layer and the valence band of the semiconductor section or an energy gap between the conduction band of the insulating layer and the conduction band of the semiconductor section, at the interface between the semiconductor section and the insulating layer, is preset to an energy gap value corresponding to a second set voltage difference between the drain region and the semiconductor substrate which varies, depending on the voltage of the gate electrode, the memory cell is capable of storing information in a nonvolatic manner "1" or "0", in which "1" means a state of holding charges in the insulating layer and "0" means a state of not-holding charges therein, at least one memory cell is previously in the state of "1", and erase means is provided, which erases the charge trapped in the insulating layer of the memory cell which is in the state of "1" thereby shifting the memory cell into the state of "0".

Claim 13

The semiconductor memory device of claim 9 wherein: write means is provided, which applies between the drain region and the gate electrode a voltage not less than the first set voltage difference while applying between the drain region and the semiconductor substrate a voltage not less than the second set voltage difference to generate a gate induced drain leakage current thereby causing charges to be trapped in the insulating layer that is then shifted to the state of "1", and read means is provided, which applies a given voltage to the gate electrode while applying between the drain region and the semiconductor substrate a voltage lower than the second set voltage difference to read the contents of a memory by sensing a gate induced drain leakage current value.

Claim 14

The semiconductor memory device of claim 9, wherein: erase means is provided, which imposes between both faces of the insulating layer of the memory cell which holds charges and is in the state of "1" a high electric field to generate a Fowler-Nordheim current to implant charges, which have a reverse polarity with respect to the charges trapped, into the insulating layer to shift the memory cell to the state of "0".

Claim 15

The semiconductor memory device of claim 9, wherein: erase means is provided, which applies a given voltage between the drain and source regions, with the voltage of the gate electrode fixed, to generate a drain to source current, resultant hot carriers having a reverse polarity with respect to the charges trapped being implanted into the insulating layer to shift the memory cell to the state of "0".

Claim 16

The semiconductor memory device of claim 9, 11 or 12, wherein: each memory cell is previously in the state of "1".

Claim 17

The semiconductor memory device of claim 10, wherein: at least four memory cells are provided, at least two word lines and at least two bit lines are provided in which each word line is connected to the gate electrodes of at least two of the memory cells while each bit line is connected to the drain regions of at least two of the memory cells, and the write means and the read means carry out a selective write operation and a selective read operation respectively wherein a selective word line voltage Vkcw and a non-selective word line voltage Vknw for a write operation; a selective word line voltage Vycw and a non-selective word line voltage Vynw for a read operation; a selective bit line voltage Vkcb and a non-selective bit line voltage Vknb for a write operation; and a selective bit line voltage Vycb and a non-selective bit line voltage Vynb for a read operation are set either according to Vkcw=Vycw<Vynw=Vynw and Vknb=Vynb<Vycb<Vkcb for a p-type substrate or according to Vkcw=Vycw>Vknw=Vynw and Vknb=Vynb>Vycb>Vkcb for an n-type substrate, and the set voltages of the word lines comprise two values while the set voltages of the bit lines comprise three values.

Claim 18

The semiconductor memory device of claim 10, wherein: at least four memory cells are provided, at least two word lines and at least two bit lines are provided in which each word line is connected to the gate electrodes of at least two of the memory cells while each bit line is connected to the drain regions of at least two of the memory cells, and the write means, the read means and the erase means carry out a selective write operation, a selective read operation and an erase operation for deleting the information of a memory in all of the memory sells sharing a common word line at the same time, respectively wherein a selective word line voltage Vkcw and a non-selective word line voltage Vknw for a write operation; a selective word line voltage Vycw and a non-selective word line voltage Vynw for a read operation; a selective word line voltage Vscw and a non-selective word line voltage Vsnw for an erase operation; a selective bit line voltage Vkcb and a non-selective bit line voltage Vknb for a write operation; a selective bit line voltage Vycb and a non-selective bit line voltage Vynb for a read operation; and a selective bit line voltage Vscb and a non-selective bit line voltage Vsnb for an erase operation are set either according to Vkcw=Vycw<Vknw=Vynw=Vsnw<Vscw and Vknb=Vynb=Vscb=Vsnb<Vycb<Vkcb for a p-type substrate or according to Vkcw=Vycw>Vknw=Vynw=Vsnw>Vscw and Vknb=Vynb=Vscb=Vsnb>Vycb>Vkcb for an n-type substrate, and the set voltages of the word lines comprise three values while the set voltages of the bit lines comprise three values.

Claim 19

The semiconductor memory device of claim 10, wherein: at least four memory cells are provided, at least two word lines and at least two bit lines are provided in which each word line is connected to the gate electrodes of at least two of the memory cells while each bit line is connected to the drain regions of at least two of the memory cells, and the write means, the read means and the erase means carry out a selective write operation, a selective read operation and an erase operation for deleting the contents of a memory in the memory sells connected to each word line, respectively wherein a selective word line voltage Vkcw and a non-selective word line voltage Vknw for a write operation; a selective word line voltage Vycw and a non-selective word line voltage Vynw for a read operation; a selective word line voltage Vscw and a non-selective word line voltage Vsnw for an erase operation; a selective bit line voltage Vkcb and a non-selective bit line voltage Vknb for a write operation; a selective bit line voltage Vycb and a non-selective bit line voltage Vynb for a read operation; and a selective bit line voltage Vscb and a non-selective bit line voltage Vsnb for an erase operation are set either according to Vkcw=Vycw<Vknw=Vsnw=Vynw<Vscw and Vknb=Vynb<Vycb<Vkcb=Vscb=Vsnb for a p-type substrate or according to Vkcw=Vycw>Vknw=Vsnw=Vynw>Vscw and Vknb=Vynb>Vycb>Vkcb=Vscb=Vsnb for an n-type substrate, and the set voltages of the word lines comprise three values while the set voltages of the bit lines comprise three values.

Claim 20

The semiconductor memory device of claim 9, wherein a floating gate electrode is formed in the insulating layer for trapping charges therein.