Independent array grounds for flash EEPROM array with paged erase architechture

Claim 2

In a semiconductor integrated circuit memory device having array means formed of a plurality of half-sectors, each of said plurality of half-sectors (402, 404, . . . ) comprising: a plurality of memory cells arrayed in rows (408-0 . . . 408-i) of word lines and columns (406-0 . . . 406-k) intersecting said rows of word lines, each of said memory cells including a floating gate transistor having a source, a drain, a floating gate, and a control gate; a plurality of half-sector bit line means each (SBL-0 . . . SBL-k) of said half-sector bit line means being connected to the drain of a memory cell in each of said rows so that said memory cells connected to said each half-sector bit line means form a column and said memory cells in said columns are connected to said plurality of half-sector bit line means in parallel; means (410-0 . . . 410-k) operatively coupled to said plurality of half-sector bit line means for selecting a half-sector; said control gates of said memory cells in each of said rows being connected to one of said word lines, said sources of said memory cells being connected to a separate individual ground line (412n); ground line circuit means (322) for generating a half-sector ground line signal (ARVSSnm), the non-selected sectors in said plurality of sectors being unaffected during erase operation on said selected sector; and said separate individual ground line being connected to said ground line circuit means for receiving said half-sector ground line signal.

Claim 3

In a semiconductor integrated circuit memory device as claimed in claim 1, wherein said ground line circuit means is responsive to a half-sector select signal so as to generate the half-sector ground line signal which is at a predetermined positive potential during erase upon selection of said half-sector.

Claim 4

In a semiconductor integrated circuit memory device as claimed in claim 2, wherein said half-sector ground line signal is at a ground potential during erase upon non-selection of said half-sector.

Claim 5

In a semiconductor integrated circuit memory device as claimed in claim 1, wherein said means for selecting a half-sector comprises a plurality of half-sector select transistors, each transistor having a source, a drain, and a gate.

Claim 6

In a semiconductor integrated circuit memory device as claimed in claim 4, wherein each of said half-sector bit line means is connected to a source of one of said half-sector select transistors.

Claim 7

In a semiconductor integrated circuit memory device as claimed in claim 5, wherein said gates of said half-sector select transistors are connected to receive a half-sector select signal.

Claim 8

In a semiconductor integrated circuit memory device as claimed in claim 2, wherein said predetermined positive potential is approximately +5.0 volts.

Claim 9

In a semiconductor integrated circuit memory device as claimed in claim 1, further comprising negative supply means for generating and supplying a relatively negative potential to said control gates of said memory cells in the selected sector during erase.

Claim 10

In a semiconductor integrated circuit memory device as claimed in claim 8, wherein said negative potential is approximately -12.0 volts.

Claim 11

In a semiconductor integrated circuit memory device having array means formed of a plurality of half-sectors (402,404 . . . ), each of said plurality of half-sectors comprising: a plurality of memory cells arrayed in rows (408-0 . . . 408-i) of word lines and columns (406-0 . . . 406-k) intersecting said rows of word lines, each of said memory cells including a floating gate transistor having a source, a drain, a floating gate, and a control gate; a plurality of half-sector bit line means (SBL-0 . . . SBL-k) each of said half-sector bit line means being connected to the drain of a memory cell in each of said rows so that said memory cells connected to said each half-sector bit line means form a column and said memory cells in said columns are connected to said plurality of half-sector bit line means in parallel; means (410-0 . . . 410-k) operatively coupled to said plurality of half-sector bit line means for selecting a half-sector; said control gates of said memory cells in each of said rows being connected to one of said word lines, said sources of said memory cells being connected to a separate individual ground line (412n); a plurality of ground line circuit means (322) for generating multiple half-sector ground line signals (ARVSSnm), the non-selected sectors in said plurality of sectors being unaffected during erase operation on said selected sector; and said separate individual ground line being connected to an associated one of said plurality of ground line circuit means for receiving a corresponding one of said multiple half-sector ground line signals.

Claim 12

In a semiconductor integrated circuit memory device having array means formed of a plurality of half-sectors (402,404 . . . ), each of said plurality of half-sectors comprising: a plurality of memory cells arrayed in rows (408-0 . . . 408-i) of word lines and columns (406-0 . . . 406-k) intersecting said rows of word lines, each of said memory cells including a floating gate transistor having a source, a drain, a floating gate, and a control gate; a plurality of half-sector bit line means (SBL-0 . . . SBL-k) each of said half-sector bit line means being connected to the drain of a memory cell in each of said rows so that said memory cells connected to said each half-sector bit line means form a column and said memory cells in said columns are connected to said plurality of half-sector bit line means in parallel; means (410-0 . . . 410-k) operatively coupled to said plurality of half-sector bit line means for selecting a half-sector; said control gates of said memory cells in each of said rows being connected to one of said word lines, said sources of said memory cells being connected to a separate individual ground line (412n); a plurality of ground line circuit means (322) for generating multiple half-sector ground line signals (ARVSSnm), the non-selected sectors in said plurality of sectors being unaffected during erase operation on said selected sector; and said separate individual ground line being connected to an associated one of said plurality of ground line circuit means for receiving a corresponding one of said multiple half-sector ground line signals.

Claim 13

In a semiconductor integrated circuit memory device as claimed in claim 10, wherein each of said plurality of ground line circuit means is responsive to a corresponding half-sector select signal so as to generate the corresponding one of the multiple half-sector ground line signals which is at a predetermined positive potential during erase upon selection of said half-sector.

Claim 14

In a semiconductor integrated circuit memory device as claimed in claim 11, wherein each of said multiple half-sector ground line signals is at a ground potential during erase upon non-selection of said half-sector.

Claim 15

In a semiconductor integrated circuit memory device as claimed in claim 10, wherein said means for selecting a half-sector comprises a plurality of half-sector select transistors, each transistor having a source, a drain, and a gate.

Claim 16

In a semiconductor integrated circuit memory device as claimed in claim 13, wherein each of said half-sector bit line means is connected to a source of one of said half-sector select transistors.

Claim 17

In a semiconductor integrated circuit memory device as claimed in claim 14, wherein said gates of said half-sector select transistors are connected to receive a half-sector select signal.

Claim 18

In a semiconductor integrated circuit memory device as claimed in claim 11, wherein said predetermined positive potential is approximately +5.0 volts.

Claim 19

In a semiconductor integrated circuit memory device as claimed in claim 10, further comprising negative supply means for generating and supplying a relatively negative potential to said control gates of said memory cells in the selected sector during erase.

Claim 20

In a semiconductor integrated circuit memory device as claimed in claim 17, wherein said negative potential is approximately -12.0 volts.

Claim 21

In a semiconductor integrated circuit memory device having array means formed of a plurality of half-sectors, each of said plurality of half-sectors including a plurality of memory cells arrayed in rows of word lines and columns of bit lines intersecting said rows of word lines, each of said memory cells including a floating gate, a control gate, a source region connected to a separate independent ground line, and a drain region coupled to a respective one of the bit lines, and where each memory cell is programmable predominately by transferring hot electrons into its floating gate and is erasable predominately by tunneling electrons from its floating gate to its source region, each of said plurality of half-sectors comprising: said control gate of each memory cell receiving a relatively negative potential during flash erasure; and ground line circuit means (322) for generating a half-sector ground line signal, (ARVSSnm) said separate independent ground line (412n) being connected to said ground line circuit means for receiving said half-sector ground line signal.

Claim 22

In a semiconductor integrated circuit memory device having array means formed of a plurality of half-sectors, each of said plurality of half-sectors including a plurality of memory cells arrayed in rows of word lines and columns of bit lines intersecting said rows of word lines, each of said memory cells including a floating gate, a control gate, a source region connected to a separate independent ground line, and a drain region coupled to a respective one of the bit lines, and where each memory cell is programmable predominately by transferring hot electrons into its floating gate and is erasable predominately by tunneling electrons from its floating gate to its source region, each of said plurality of half-sectors comprising: said control gate of each memory cell receiving a relatively negative potential during flash erasure; and ground line circuit means (322) for generating a half-sector ground line signal, (ARVSSnm) said separate independent ground line (412n) being connected to said ground line circuit means for receiving said half-sector ground line signal.

Claim 23

In a semiconductor integrated circuit memory device as claimed in claim 19, wherein said half-sector ground line signal is at a predetermined positive potential during erase upon selection of a half-sector and is at a ground potential during erase upon non-selection of said half-sector.