US5368684A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etching method for a silicon-containing layer using hydrogen bromide
Assignee: Tokyo Electron Ltd
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Filing: 1992-12-18
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Granted: 1994-11-29
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Expires: 2012-12-18
Abstract
Abstract A magnetron discharge is generated by a high-frequency electric field and a magnetic field perpendicular to the electric field to generate a plasma of an etching gas, and an object to be processed having a silicon-containing layer represented by a polysilicon layer is exposed in the plasma to etch the silicon-containing layer. In this case, the etching gas mainly contains an HBr gas, a gas mixture of HBr and Cl 2 gases, a gas mixture of HBr and HCl gases, or a gas obtained by adding an oxygen-containing gas such as an O 2 gas to each of these gases.
Inventors
- 👤 Yoshio Ishikawa
- 👤 Hiroshi Kojima
- 👤 Masahito Hiratuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:39
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
101 words
A method of etching a silicon-containing layer in an object to be processed having said silicon-containing layer, comprising the steps of: generating a magnetron discharge by a high-frequency electric field and a magnetic field perpendicular to the high-frequency electric field to generate a plasma of an etching gas; and exposing said object in the plasma to etch said silicon-containing layer, wherein the etching gas mainly contains a gas mixture of HBr and Cl 2 gases, and wherein a ratio of a flow rate of the HBr gas to a flow rate of the Cl 2 gas is not less than 40/60.
Claim 2
Independent Claim
101 words
A method of etching a silicon-containing layer in an object to be processed having said silicon-containing layer, comprising the steps of: generating a magnetron discharge by a high-frequency electric field and a magnetic field perpendicular to the high-frequency electric field to generate a plasma of an etching gas; and exposing said object in the plasma to etch said silicon-containing layer, wherein the etching gas mainly contains a gas mixture of HBr and Cl 2 gases, and wherein a ratio of a flow rate of the HBr gas to a flow rate of the Cl 2 gas is not less than 40/60.
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein said silicon-containing layer is a polysilicon layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-28 | 1998-05-30 | 1998-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-28 | 2002-05-30 | 2002-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-28 | 2006-05-30 | 2006-11-29 | $7700.00 | Window Closed / Lapsed |