Patent US2615397A successfully refreshed from Google Patents.
Patent US5368684A successfully refreshed from Google Patents.
US5368684A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etching method for a silicon-containing layer using hydrogen bromide
Assignee: Tokyo Electron Ltd
•
Filing: 1992-12-18
•
Granted: 1994-11-29
•
Expires: 2012-12-18
Abstract
Abstract A magnetron discharge is generated by a high-frequency electric field and a magnetic field perpendicular to the electric field to generate a plasma of an etching gas, and an object to be processed having a silicon-containing layer represented by a polysilicon layer is exposed in the plasma to etch the silicon-containing layer. In this case, the etching gas mainly contains an HBr gas, a gas mixture of HBr and Cl 2 gases, a gas mixture of HBr and HCl gases, or a gas obtained by adding an oxygen-containing gas such as an O 2 gas to each of these gases.
Inventors
- 👤 Yoshio Ishikawa
- 👤 Hiroshi Kojima
- 👤 Masahito Hiratuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:24
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
101 words
A method of etching a silicon-containing layer in an object to be processed having said silicon-containing layer, comprising the steps of: generating a magnetron discharge by a high-frequency electric field and a magnetic field perpendicular to the high-frequency electric field to generate a plasma of an etching gas; and exposing said object in the plasma to etch said silicon-containing layer, wherein the etching gas mainly contains a gas mixture of HBr and Cl 2 gases, and wherein a ratio of a flow rate of the HBr gas to a flow rate of the Cl 2 gas is not less than 40/60.
Claim 2
Independent Claim
101 words
A method of etching a silicon-containing layer in an object to be processed having said silicon-containing layer, comprising the steps of: generating a magnetron discharge by a high-frequency electric field and a magnetic field perpendicular to the high-frequency electric field to generate a plasma of an etching gas; and exposing said object in the plasma to etch said silicon-containing layer, wherein the etching gas mainly contains a gas mixture of HBr and Cl 2 gases, and wherein a ratio of a flow rate of the HBr gas to a flow rate of the Cl 2 gas is not less than 40/60.
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein said silicon-containing layer is a polysilicon layer.
References Cited (Backward Citations)
US4450042A
Cited
US4521275A
Cited
US4521275B1
Cited
US4490209A
Cited
US4490209B1
Cited
US4490209B2
Cited
US4799991A
Cited
US4983253A
Cited
US5007982A
Cited
JPH03241829A
Cited
US5106767A
Cited
US5242536A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-28 | 1998-05-30 | 1998-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-28 | 2002-05-30 | 2002-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-28 | 2006-05-30 | 2006-11-29 | $7700.00 | Window Closed / Lapsed |