US5372958A
Expired / Lapsed
US
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Process for fabricating a thin film semiconductor device
Assignee: Seiko Epson Corp
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Filing: 1991-11-15
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Granted: 1994-12-13
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Expires: 2011-11-15
Abstract
Abstract There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600° C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
Inventors
- 👤 Mitsutoshi Miyasaka
- 👤 Thomas W. Little
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 04:20
CPC Classifications
H; H10; H10D; H10D89/00; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P; H10P95/00; H10P95/94; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/122; Y10S148/15; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
117 words
A process for fabricating a semiconductor device comprising: a first step of forming a silicon film on a substrate having at least a surface formed of an insulative material; a second step of heat-treating the silicon film formed on the substrate at a temperature below 600° C. after said first step; a third step of forming a silicon oxide film on the heat-treated silicon film by electron cyclotron resonance CVD after said second step; and a fourth step of implanting a dopant as donor or acceptor into the silicon film by a bucket type ion implantation system of non-mass separation type, using a mixed gas of a hydride of the dopant and hydrogen after said third step.
Claim 2
Dependent Claim
117 words
A process for fabricating a semiconductor device comprising: a first step of forming a silicon film on a substrate having at least a surface formed of an insulative material; a second step of heat-treating the silicon film formed on the substrate at a temperature below 600° C. after said first step; a third step of forming a silicon oxide film on the heat-treated silicon film by electron cyclotron resonance CVD after said second step; and a fourth step of implanting a dopant as donor or acceptor into the silicon film by a bucket type ion implantation system of non-mass separation type, using a mixed gas of a hydride of the dopant and hydrogen after said third step.
Claim 3
Dependent Claim
56 words
A process for fabricating a semiconductor device according to claim 1, wherein the fourth step is to form a gate electrode on the silicon oxide film which will be a gate insulating film of a thin film transistor, and is to form a source region and a drain region with the gate electrode being a mask.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-12 | 1998-06-13 | 1998-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-12 | 2002-06-13 | 2002-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-12 | 2006-06-13 | 2006-12-13 | $7700.00 | Window Closed / Lapsed |