Patent US5374578A successfully refreshed from Google Patents.
US5374578A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ozone gas processing for ferroelectric memory circuits
Assignee: Ramtron International Corp
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Filing: 1993-05-19
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Granted: 1994-12-20
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Expires: 2013-05-19
Abstract
Abstract A method for forming a ferroelectric capacitor for use an integrated circuit establishing one layer over another and then annealing the structure, using an oxygen or ozone anneal, after each layer is established. In particular, an ozone anneal is used after the establishment of a layer of ferroelectric material.
Inventors
- 👤 Divyesh N. Patel
- 👤 Douglas Sheldon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:10
CPC Classifications
H; H10; H10B; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/003
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
254 words
A method for forming a ferroelectric memory circuit comprising the steps of: establishing a bottom electrode structure on a substrate; establishing a layer of ferroelectric material over said bottom electrode structure; performing a first anneal on said layer of ferroelectric material, said first anneal being an ozone anneal; establishing a top electrode layer over said layer of ferroelectric material: patterning said top electrode layer to form a patterned top electrode; performing a second anneal on said patterned top electrode, said layer of ferroelectric material and said bottom electrode structure: patterning said layer of ferroelectric material to form a patterned ferroelectric material: patterning said bottom electrode structure to form a patterned bottom electrode; performing a third anneal on said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; establishing a layer of glass over said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; opening contact windows in said layer of glass to said patterned top electrode and said patterned bottom electrode; performing a fourth anneal on said layer of glass, said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; defining another contact window in said layer of glass to said substrate; establishing a metal interconnect layer over said layer of glass and in said contact windows; patterning said metal interconnect layer to form a patterned metal interconnect; and performing a fifth anneal on said patterned metal interconnect, said layer of glass, said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode.
Claim 2
Independent Claim
254 words
A method for forming a ferroelectric memory circuit comprising the steps of: establishing a bottom electrode structure on a substrate; establishing a layer of ferroelectric material over said bottom electrode structure; performing a first anneal on said layer of ferroelectric material, said first anneal being an ozone anneal; establishing a top electrode layer over said layer of ferroelectric material: patterning said top electrode layer to form a patterned top electrode; performing a second anneal on said patterned top electrode, said layer of ferroelectric material and said bottom electrode structure: patterning said layer of ferroelectric material to form a patterned ferroelectric material: patterning said bottom electrode structure to form a patterned bottom electrode; performing a third anneal on said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; establishing a layer of glass over said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; opening contact windows in said layer of glass to said patterned top electrode and said patterned bottom electrode; performing a fourth anneal on said layer of glass, said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; defining another contact window in said layer of glass to said substrate; establishing a metal interconnect layer over said layer of glass and in said contact windows; patterning said metal interconnect layer to form a patterned metal interconnect; and performing a fifth anneal on said patterned metal interconnect, said layer of glass, said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode.
Claim 3
Dependent Claim
54 words
The method of claim 1 further comprising the steps of establishing an inter-metal dielectric over said patterned metal interconnect and said layer of glass and performing a sixth anneal on said inter-metal dielectric, said patterned metal interconnect, said layer of glass, said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode.
Claim 4
Dependent Claim
17 words
The method of claim 1 wherein said first anneal is done by a rapid thermal annealing process.
Claim 5
Dependent Claim
34 words
The method of claim 3 wherein said rapid thermal annealing process is done at a temperature in the range of 650° C. to 850° C. for a period of between 5 and 30 seconds.
Claim 6
Dependent Claim
34 words
The method of claim 1 wherein said first anneal is a combination of two anneals, one first anneal being an ozone rapid thermal anneal and another said first anneal being an oxygen furnace anneal.
Claim 7
Dependent Claim
34 words
The method of claim 1 wherein said first anneal is a combination of two anneals, one first anneal being an ozone furnace anneal and another said first anneal being an oxygen rapid thermal anneal.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein said second anneal is a furnace anneal.
Claim 9
Dependent Claim
26 words
The method of claim 7 wherein said furnace anneal is at a temperature of between 650° C. and 750° C. in oxygen for approximately one hour.
Claim 10
Dependent Claim
34 words
The method of claim 1 wherein said second anneal is a rapid thermal anneal in ozone at a temperature over 750° C. followed by a furnace anneal at 750° C. for approximately one hour.
Claim 11
Dependent Claim
31 words
The method of claim 1 wherein said third anneal is a furnace anneal at a temperature in the range of 450° C. to 750° C. in oxygen for approximately one hour.
Claim 12
Dependent Claim
46 words
The method of claim 1 further comprising the step of exposing the patterned top electrode, the patterned ferroelectric material and the patterned bottom electrode to ozone at a temperature of between 400° C. to 450° C. for approximately 30 minutes prior to performing the third anneal.
Claim 13
Dependent Claim
26 words
The method of claim 1 wherein said fourth anneal is a furnace anneal at a temperature of about 550° C. in oxygen for approximately one hour.
Claim 14
Dependent Claim
46 words
The method of claim 1 further comprising the step of exposing the patterned top electrode, the patterned ferroelectric material and the patterned bottom electrode to ozone at a temperature of between 400° C. and 450° C. for approximately 30 minutes prior to performing the fourth anneal.
Claim 15
Dependent Claim
26 words
The method of claim 1 wherein said fifth anneal is a furnace anneal at a temperature of about 550° C. in oxygen for approximately one hour.
Claim 16
Dependent Claim
46 words
The method of claim 1 further comprising the step of exposing the patterned top electrode, the patterned ferroelectric material and the patterned bottom electrode to ozone at a temperature of between 400° C. to 450° C. for approximately 30 minutes prior to performing the fifth anneal.
Claim 17
Dependent Claim
13 words
The method of claim 2 wherein said sixth anneal is a furnace anneal.
Claim 18
Dependent Claim
24 words
The method of claim 16 wherein said furnace anneal is at a temperature of less than 450° C. for no more than 30 minutes.
Claim 19
Dependent Claim
39 words
The method of claim 1 further comprising the step of performing a preliminary anneal of the bottom electrode structure by a furnace anneal or a rapid thermal anneal prior to the step of establishing the layer of ferroelectric material.
Claim 20
Independent Claim
88 words
A method for forming a ferroelectric capacitor comprising the steps of: establishing a bottom electrode structure; establishing a layer of ferroelectric material over said bottom electrode structure; performing a first anneal on said layer of ferroelectric material, said first anneal being an ozone anneal; establishing a top electrode layer over said layer of ferroelectric material and patterning said top electrode layer to form a patterned top electrode; and performing a second ozone anneal on said patterned top electrode, said layer of ferroelectric material and said bottom electrode structure.
Claim 21
Independent Claim
88 words
A method for forming a ferroelectric capacitor comprising the steps of: establishing a bottom electrode structure; establishing a layer of ferroelectric material over said bottom electrode structure; performing a first anneal on said layer of ferroelectric material, said first anneal being an ozone anneal; establishing a top electrode layer over said layer of ferroelectric material and patterning said top electrode layer to form a patterned top electrode; and performing a second ozone anneal on said patterned top electrode, said layer of ferroelectric material and said bottom electrode structure.
Claim 22
Dependent Claim
25 words
The method of claim 19 wherein said first anneal is performed after establishing the layer of ferroelectric material and before establishing the top electrode layer.
Claim 23
Independent Claim
256 words
A method of forming a ferroelectric memory circuit comprising the steps of: establishing a bottom electrode structure in an active region of a substrate; establishing a layer of ferroelectric material over said bottom electrode Structure; performing a first anneal on said layer of ferroelectric material, said first anneal being an ozone anneal; establishing a top electrode layer over said layer of ferroelectric material; patterning said top electrode layer to form a patterned top electrode; performing a second anneal on said patterned top electrode, said patterned ferroelectric material and said bottom electrode structure; patterning said layer of ferroelectric material to form a patterned ferroelectric material: patterning said bottom electrode Structure to form a patterned bottom electrode; performing a third anneal on said patterned top electrode, said patterned material and said patterned bottom electrode; establishing a layer of glass over said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; defining contact windows in said layer of glass to said patterned top electrode and said patterned bottom electrode; performing a fourth anneal on said layer of glass, said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; defining another contact window in said layer of glass to said substrate; establishing a metal interconnect layer over said layer of glass and in said contact windows; patterning said metal interconnect layer to form a patterned metal interconnect; and performing a fifth anneal on said metal interconnect, On said layer of glass, said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode.
Claim 24
Independent Claim
256 words
A method of forming a ferroelectric memory circuit comprising the steps of: establishing a bottom electrode structure in an active region of a substrate; establishing a layer of ferroelectric material over said bottom electrode Structure; performing a first anneal on said layer of ferroelectric material, said first anneal being an ozone anneal; establishing a top electrode layer over said layer of ferroelectric material; patterning said top electrode layer to form a patterned top electrode; performing a second anneal on said patterned top electrode, said patterned ferroelectric material and said bottom electrode structure; patterning said layer of ferroelectric material to form a patterned ferroelectric material: patterning said bottom electrode Structure to form a patterned bottom electrode; performing a third anneal on said patterned top electrode, said patterned material and said patterned bottom electrode; establishing a layer of glass over said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; defining contact windows in said layer of glass to said patterned top electrode and said patterned bottom electrode; performing a fourth anneal on said layer of glass, said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; defining another contact window in said layer of glass to said substrate; establishing a metal interconnect layer over said layer of glass and in said contact windows; patterning said metal interconnect layer to form a patterned metal interconnect; and performing a fifth anneal on said metal interconnect, On said layer of glass, said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode.
Claim 25
Independent Claim
168 words
A method of forming a ferroelectric memory structure comprising the steps of: establishing a bottom electrode structure, a layer of ferroelectric material thereover, and a top electrode layer over said layer of ferroelectric material; patterning said bottom electrode structure, said layer of ferroelectric material, and said top electrode layer to form a patterned top electrode, a patterned ferroelectric material and a patterned bottom electrode; establishing a dielectric layer over said patterned top electrode, said patterned ferroelectric material, and said patterned bottom electrode, opening at least one contact window in said dielectric layer, and establishing an electrically conductive interconnect layer over said dielectric layer and in said contact window for making electrical connection to one or more of said electrodes; performing a series of anneal steps during said preceding anneal steps being an ozone anneal after said layer of ferroelectric material is established over said bottom electrode structure; wherein at least one of said anneal steps comprises separately performing an anneal in ozone and performing an anneal in oxygen.
Claim 26
Independent Claim
168 words
A method of forming a ferroelectric memory structure comprising the steps of: establishing a bottom electrode structure, a layer of ferroelectric material thereover, and a top electrode layer over said layer of ferroelectric material; patterning said bottom electrode structure, said layer of ferroelectric material, and said top electrode layer to form a patterned top electrode, a patterned ferroelectric material and a patterned bottom electrode; establishing a dielectric layer over said patterned top electrode, said patterned ferroelectric material, and said patterned bottom electrode, opening at least one contact window in said dielectric layer, and establishing an electrically conductive interconnect layer over said dielectric layer and in said contact window for making electrical connection to one or more of said electrodes; performing a series of anneal steps during said preceding anneal steps being an ozone anneal after said layer of ferroelectric material is established over said bottom electrode structure; wherein at least one of said anneal steps comprises separately performing an anneal in ozone and performing an anneal in oxygen.
Claim 27
Dependent Claim
15 words
The method of claim 22 wherein said oxygen anneal step follows said ozone anneal step.
Claim 28
Independent Claim
187 words
A method of forming a ferroelectric memory structure comprising the steps of: establishing a bottom electrode structure, a layer of ferroelectric material thereover, and a top electrode layer over said layer of ferroelectric material; patterning said bottom electrode structure, said layer said top electrode layer to form a patterned top electrode, a patterned ferroelectric material and a patterned bottom electrode; establishing a dielectric layer over said patterned top electrode, said patterned ferroelectric material, and said patterned bottom electrode, opening at least one contact window in said dielectric layer, and establishing an electrically conductive interconnect layer over said dielectric layer and in said contact window for making electrical connection to one or more of said electrodes; performing a series of anneal steps during said preceding steps, at least one of said anneal steps being an ozone anneal after said layer of ferroelectric material is established over said bottom electrode structure; wherein at least one of said anneal steps comprises exposing the ferroelectric memory structure to an ozone atmosphere at a temperature in the range substantially of 400° to 450° C. and then performing a furnace anneal in oxygen.
Claim 29
Independent Claim
187 words
A method of forming a ferroelectric memory structure comprising the steps of: establishing a bottom electrode structure, a layer of ferroelectric material thereover, and a top electrode layer over said layer of ferroelectric material; patterning said bottom electrode structure, said layer said top electrode layer to form a patterned top electrode, a patterned ferroelectric material and a patterned bottom electrode; establishing a dielectric layer over said patterned top electrode, said patterned ferroelectric material, and said patterned bottom electrode, opening at least one contact window in said dielectric layer, and establishing an electrically conductive interconnect layer over said dielectric layer and in said contact window for making electrical connection to one or more of said electrodes; performing a series of anneal steps during said preceding steps, at least one of said anneal steps being an ozone anneal after said layer of ferroelectric material is established over said bottom electrode structure; wherein at least one of said anneal steps comprises exposing the ferroelectric memory structure to an ozone atmosphere at a temperature in the range substantially of 400° to 450° C. and then performing a furnace anneal in oxygen.
Claim 30
Independent Claim
384 words
A method for forming a ferroelectric memory circuit comprising the steps of: (1) forming a bottom electrode structure on a substrate; (2) depositing a layer of ferroelectric material over said bottom electrode structure; (3) performing a first anneal on said layer of ferroelectric material, said first anneal being an ozone anneal; (4) depositing a top electrode layer over said layer of ferroelectric material; (5) depositing a first photoresist pattern over said top electrode layer; (6) removing a portion of said top electrode layer not covered by said first photoresist pattern to form a patterned top electrode; (7) removing said first photoresist pattern; (8) performing a second anneal on said patterned top electrode, said layer of ferroelectric material and said bottom electrode structure; (9) depositing a second photoresist pattern over said patterned top electrode and said layer of ferroelectric material; (10) removing a portion of said layer of ferroelectric material not covered by said second photoresist pattern to form a patterned ferroelectric material; (11) removing said second photoresist pattern; (12) depositing a third photoresist pattern over said patterned top electrode, said patterned ferroelectric material and said bottom electrode structure; (14) removing a portion of said bottom electrode structure not covered by said third photoresist pattern to form a patterned bottom electrode; (15) removing said third photoresist pattern; (16) performing a third anneal on said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; (17) depositing a layer of glass over said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; (18) opening respective contact windows in said layer of glass to said patterned top electrode and said patterned bottom electrode; (19) performing a fourth anneal on said patterned top electrode, said patterned of ferroelectric material and said patterned bottom electrode; (20) opening another contact window in said layer of glass to said substrate; (21) depositing a metal interconnect layer over said layer of glass and in said contact windows; (22) depositing a fourth photoresist pattern over said metal interconnect layer; (23) removing a portion of said metal interconnect layer to form a patterned metal interconnect; (24) removing said fourth photoresist pattern; and (25) performing a fifth anneal on said patterned metal interconnect, said layer of glass, said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode.
Claim 31
Independent Claim
384 words
A method for forming a ferroelectric memory circuit comprising the steps of: (1) forming a bottom electrode structure on a substrate; (2) depositing a layer of ferroelectric material over said bottom electrode structure; (3) performing a first anneal on said layer of ferroelectric material, said first anneal being an ozone anneal; (4) depositing a top electrode layer over said layer of ferroelectric material; (5) depositing a first photoresist pattern over said top electrode layer; (6) removing a portion of said top electrode layer not covered by said first photoresist pattern to form a patterned top electrode; (7) removing said first photoresist pattern; (8) performing a second anneal on said patterned top electrode, said layer of ferroelectric material and said bottom electrode structure; (9) depositing a second photoresist pattern over said patterned top electrode and said layer of ferroelectric material; (10) removing a portion of said layer of ferroelectric material not covered by said second photoresist pattern to form a patterned ferroelectric material; (11) removing said second photoresist pattern; (12) depositing a third photoresist pattern over said patterned top electrode, said patterned ferroelectric material and said bottom electrode structure; (14) removing a portion of said bottom electrode structure not covered by said third photoresist pattern to form a patterned bottom electrode; (15) removing said third photoresist pattern; (16) performing a third anneal on said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; (17) depositing a layer of glass over said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode; (18) opening respective contact windows in said layer of glass to said patterned top electrode and said patterned bottom electrode; (19) performing a fourth anneal on said patterned top electrode, said patterned of ferroelectric material and said patterned bottom electrode; (20) opening another contact window in said layer of glass to said substrate; (21) depositing a metal interconnect layer over said layer of glass and in said contact windows; (22) depositing a fourth photoresist pattern over said metal interconnect layer; (23) removing a portion of said metal interconnect layer to form a patterned metal interconnect; (24) removing said fourth photoresist pattern; and (25) performing a fifth anneal on said patterned metal interconnect, said layer of glass, said patterned top electrode, said patterned ferroelectric material and said patterned bottom electrode.
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