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US5378647A
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Method of making a bottom gate mask ROM device
Assignee: United Microelectronics Corp
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Filing: 1993-10-25
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Granted: 1995-01-03
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Expires: 2013-10-25
Abstract
Abstract The process comprises a sequence of steps initiated by forming a word line mask on the surface of a substrate of a first conductivity type. Ions are implanted to form word lines covered by a dielectric layer. A polysilicon layer doped with a given conductivity type on the dielectric layer is formed on a second dielectric layer on the polysilicon layer. Bit lines are formed with a different conductivity type in the polysilicon layer. Forming a code mask above the polysilicon layer with openings above predetermined regions, etched through the mask to remove predetermined regions in the first polysilicon layer, whereby the ROM is encoded. Preferably, a combined silicon dioxide and silicon nitride layer is formed above the polysilicon layer before forming the code mask. Preferably, the silicon dioxide is deposited first, patterned and used as a mask for forming dopant patterns in the polysilicon layer through openings therein. Preferably, a layer of silicon nitride is deposited upon the silicon dioxide to a greater thickness than the silicon dioxide and is then planarized. Preferably, the dielectric layer formed above the word lines comprises a gate oxide layer.
Inventors
- 👤 Gary Hong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:15
CPC Classifications
H; H10; H10B; H10B20/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
181 words
A method of manufacturing a ROM semiconductor device, which comprises the steps of (a) forming a word line mask with a word line pattern therein on the surface of a work piece comprising a P- semiconductor substrate of a first conductivity type, (b) performing an ion implantation into the surface of said substrate through said word line pattern in said mask to form doped word lines in said substrate of N+ ions, (c) forming a first dielectric layer on said substrate above said word lines, (d) forming a polysilicon layer doped with a P conductivity type on said dielectric layer, (e) forming a second dielectric layer on said polysilicon layer, (f) forming an ion implant mask over said dielectric layer patterned by a bit line mask and then ion implanting N ions through said ion implant mask to form bit lines with an N conductivity type in said polysilicon layer, (g) forming a code mask above said polysilicon layer with openings therethrough, and (h) etching through said mask to remove code regions in said polysilicon layer, whereby said ROM is encoded.
Claim 2
Independent Claim
181 words
A method of manufacturing a ROM semiconductor device, which comprises the steps of (a) forming a word line mask with a word line pattern therein on the surface of a work piece comprising a P- semiconductor substrate of a first conductivity type, (b) performing an ion implantation into the surface of said substrate through said word line pattern in said mask to form doped word lines in said substrate of N+ ions, (c) forming a first dielectric layer on said substrate above said word lines, (d) forming a polysilicon layer doped with a P conductivity type on said dielectric layer, (e) forming a second dielectric layer on said polysilicon layer, (f) forming an ion implant mask over said dielectric layer patterned by a bit line mask and then ion implanting N ions through said ion implant mask to form bit lines with an N conductivity type in said polysilicon layer, (g) forming a code mask above said polysilicon layer with openings therethrough, and (h) etching through said mask to remove code regions in said polysilicon layer, whereby said ROM is encoded.
Claim 3
Dependent Claim
25 words
The method of claim 1 wherein a combined silicon dioxide and silicon nitride layer is formed above said polysilicon layer before forming said code mask.
Claim 4
Dependent Claim
29 words
The method of claim 2 wherein said silicon dioxide is deposited first, patterned and used as a mask for forming dopant patterns in said polysilicon layer through openings therein.
Claim 5
Dependent Claim
29 words
The method of claim 3 wherein a layer of silicon nitride is deposited upon said silicon dioxide to a greater thickness than said silicon dioxide and is then planarized.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein said first dielectric layer formed above said word lines comprises a gate oxide layer.
Claim 7
Dependent Claim
25 words
The method of claim 5 wherein a combined silicon dioxide and silicon nitride layer is formed above said polysilicon layer before forming said code mask.
Claim 8
Dependent Claim
29 words
The method of claim 6 wherein said silicon dioxide is deposited first, patterned and used as a mask for forming dopant patterns in said polysilicon layer through openings therein.
Claim 9
Dependent Claim
29 words
The method of claim 7 wherein a layer of silicon nitride is deposited upon said silicon dioxide to a greater thickness than said silicon dioxide and is then planarized.
Claim 10
Independent Claim
236 words
A method of manufacturing a ROM semiconductor device, which comprises the steps of (a) forming in the surface of a semiconductor substrate of a P conductivity type, word lines of an N conductivity type, (c) forming a first dielectric layer on said substrate above said word lines, (d) forming a polysilicon layer on said first dielectric layer, (e) performing a first uniform ion implantation into said polysilicon layer with a P conductivity type, (f) forming a second dielectric layer on said polysilicon layer, (g) forming a bit line mask on said first dielectric layer, (h) etching to form openings through said second dielectric layer to said polysilicon layer, (i) performing a second ion implantation through said openings into said polysilicon layer to form bit lines in said polysilicon layer with an N conductivity type, (i) removing said bit line mask, (j) forming an insulating layer on said second dielectric layer and into said openings therein into contact with said polysilicon layer, (k) planarizing said insulating layer to expose the surface of said second dielectric layer leaving an alternating of said insulating layer and said second dielectric layer, (l) forming a glass layer on said insulating layer and said second dielectric layer, (m) forming a code mask on said glass layer with openings above said second dielectric layer, and (n) etching through said mask to remove code regions in said polysilicon layer, whereby said ROM is encoded.
Claim 11
Independent Claim
236 words
A method of manufacturing a ROM semiconductor device, which comprises the steps of (a) forming in the surface of a semiconductor substrate of a P conductivity type, word lines of an N conductivity type, (c) forming a first dielectric layer on said substrate above said word lines, (d) forming a polysilicon layer on said first dielectric layer, (e) performing a first uniform ion implantation into said polysilicon layer with a P conductivity type, (f) forming a second dielectric layer on said polysilicon layer, (g) forming a bit line mask on said first dielectric layer, (h) etching to form openings through said second dielectric layer to said polysilicon layer, (i) performing a second ion implantation through said openings into said polysilicon layer to form bit lines in said polysilicon layer with an N conductivity type, (i) removing said bit line mask, (j) forming an insulating layer on said second dielectric layer and into said openings therein into contact with said polysilicon layer, (k) planarizing said insulating layer to expose the surface of said second dielectric layer leaving an alternating of said insulating layer and said second dielectric layer, (l) forming a glass layer on said insulating layer and said second dielectric layer, (m) forming a code mask on said glass layer with openings above said second dielectric layer, and (n) etching through said mask to remove code regions in said polysilicon layer, whereby said ROM is encoded.
Claim 12
Dependent Claim
10 words
The method of claim 9 wherein said glass comprises BPSG.
References Cited (Backward Citations)
US3914855A
Cited
US5002896A
Cited
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