Patent US5401678A successfully refreshed from Google Patents.
US5401678A
Expired / Lapsed
US
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Transistor and method for fabricating the same
Assignee: SK Hynix Inc
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Filing: 1993-12-02
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Granted: 1995-03-28
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Expires: 2013-12-02
Abstract
Abstract An LDD transistor, preventive of the weakening of source/drain junction breakdown voltage and the increase of junction leakage current, and a method for the fabrication of the same. The LDD transistor is comprised of: a field oxide film formed on a predetermined portion of a semiconductor having a low density ion-implanted region therein, the field oxide film having a damaged portion; a gate electrode formed over the field oxide film; an insulating film formed over the gate electrode; a gate polyoxide film resulting from the oxidation of the side wall of the gate electrode; a spacer insulating film formed at the side wall provided by the gate polyoxide film and the insulating film atop the gate polyoxide film; a pad polysilicon film deposited over the insulating film, spacer oxide film, the low density ion-implanted region and the field oxide film; and a high density ion-implanted region formed below the pad polysilicon film, being confined within the low density ion-implanted region.
Inventors
- 👤 Jae G. Jeong
- 👤 Youn J. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/601; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/017; H10D84/0184; H10D84/0191
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
200 words
In a method for fabricating a transistor wherein a semiconductor substrate is sectioned into an operational region and a device separation region by the formation of a field oxide with a bird's beak and has in said operational region a low density ion-implanted region which a high density ion-implanted region is confined within, so as not to contact said high density ion-implanted region with said semiconductor substrate when forming a source or drain region, the improvement which comprises the steps of: forming a gate electrode on said field oxide film said gate electrode being insulated by an insulating film formed thereon and a gate polyoxide film resulting from the oxidation of its side wall; forming a spacer insulating film at the side wall provided by said insulating film and said gate polyoxide film; depositing a pad polysilicon film entirely over the resulting structure so as to implant high density impurity ions in said pad polysilicon film; etching said pad polysilicon film so as to leave said pad polysilicon film atop said operational region and said spacer insulating film; and applying a thermal process to form one of said source region and said drain region within said low density ion-implanted region.
Claim 2
Dependent Claim
200 words
In a method for fabricating a transistor wherein a semiconductor substrate is sectioned into an operational region and a device separation region by the formation of a field oxide with a bird's beak and has in said operational region a low density ion-implanted region which a high density ion-implanted region is confined within, so as not to contact said high density ion-implanted region with said semiconductor substrate when forming a source or drain region, the improvement which comprises the steps of: forming a gate electrode on said field oxide film said gate electrode being insulated by an insulating film formed thereon and a gate polyoxide film resulting from the oxidation of its side wall; forming a spacer insulating film at the side wall provided by said insulating film and said gate polyoxide film; depositing a pad polysilicon film entirely over the resulting structure so as to implant high density impurity ions in said pad polysilicon film; etching said pad polysilicon film so as to leave said pad polysilicon film atop said operational region and said spacer insulating film; and applying a thermal process to form one of said source region and said drain region within said low density ion-implanted region.
Claim 3
Dependent Claim
50 words
A method according to claim 1, further comprising the steps of: forming an interlayer insulating film over said pad polysilicon film; and etching said pad polysilicon film to form a contact hole, through which said high density ion-implanted region formed in said low density ion-implanted region can be electrically connected.
Claim 4
Dependent Claim
27 words
A method according to claim 1, wherein said low density ion-implanted region has an impurity ion concentration of approximately 1×10 17 to 1×10 19 atoms/cm 3 .
Claim 5
Dependent Claim
27 words
A method according to claim 1, wherein said high density ion-implanted region has an impurity ion concentration of not less than approximately 1×10 20 atoms/cm 3 .
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-03-27 | 1998-09-26 | 1999-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-27 | 2002-09-26 | 2003-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-27 | 2006-09-26 | 2007-03-28 | $7700.00 | Window Closed / Lapsed |