US5404029A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrically programmable antifuse element
Assignee: Microsemi SoC Corp
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Filing: 1991-11-12
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Granted: 1995-04-04
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Expires: 2011-11-12
Abstract
Abstract An antifuse according to the present invention includes a lower electrode formed from a first metal interconnect layer in an integrated circuit or the like. The lower electrode is disposed on an insulating surface. An inter-metal dielectric including an antifuse aperture disposed there lies over the inter-metal dielectric layer. The antifuse aperture extends through the inter-metal dielectric layer and also extends completely through the lower electrode. An antifuse material is disposed in the antifuse aperture. An upper electrode formed from a first metal interconnect layer is disposed over the antifuse material.
Inventors
- 👤 John D. Husher
- 👤 Abdul R. Forouhi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/49; H10W20/491; Y; Y10; Y10S; Y10S148/00; Y10S148/055
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
84 words
An electrically programmable antifuse, including: a lower electrode comprising a layer chosen from the group of AlSi and AlSiCu; a field dielectric layer disposed over said lower electrode; an antifuse aperture extending completely through said field dielectric and said lower electrode; an antifuse material disposed in said antifuse aperture, said antifuse material comprising a multilayer structure including at least a layer of silicon nitride and a layer of amorphous silicon; and an upper electrode disposed above said field dielectric layer and said antifuse material.
Claim 2
Dependent Claim
84 words
An electrically programmable antifuse, including: a lower electrode comprising a layer chosen from the group of AlSi and AlSiCu; a field dielectric layer disposed over said lower electrode; an antifuse aperture extending completely through said field dielectric and said lower electrode; an antifuse material disposed in said antifuse aperture, said antifuse material comprising a multilayer structure including at least a layer of silicon nitride and a layer of amorphous silicon; and an upper electrode disposed above said field dielectric layer and said antifuse material.
Claim 3
Dependent Claim
15 words
The electrically programmable antifuse of claim 1 wherein said layer of amorphous silicon is hydrogenated.
Claim 4
Dependent Claim
15 words
The electrically programmable antifuse of claim 2 wherein said layer of amorphous silicon is doped.
Claim 5
Dependent Claim
28 words
The electrically programmable antifuse of claim 2 wherein said layer of amorphous silicon has a thickness in the range of from about 1,000 Å to about 5,000 Å.
Claim 6
Dependent Claim
28 words
The electrically programmable antifuse of claim 2 wherein the hydrogen content of said layer of amorphous silicon is in the range of from about 5% to about 40%.
Claim 7
Dependent Claim
20 words
The electrically programmable antifuse of claim 2 wherein the hydrogen content of said layer of amorphous silicon is about 10%.
Claim 8
Dependent Claim
15 words
The electrically programmable antifuse of claim 1 wherein said layer of amorphous silicon is doped.
Claim 9
Dependent Claim
28 words
The electrically programmable antifuse of claim 1 wherein said layer of amorphous silicon has a thickness in the range of from about 1,000 Å to about 5,000 Å.
Claim 10
Dependent Claim
86 words
An electrically programmable antifuse, including: a lower electrode comprising a multilayer structure chosen from the group consisting of TiW/AlSi and TiW/AlSi/Ti-W; a field dielectric layer disposed over said lower electrode; an antifuse aperture extending completely through said field dielectric and said lower electrode; an antifuse material disposed in said antifuse aperture, said antifuse material comprising a multilayer structure including at least a layer of silicon nitride and a layer of amorphous silicon; and an upper electrode disposed above said field dielectric layer and said antifuse material.
Claim 11
Dependent Claim
86 words
An electrically programmable antifuse, including: a lower electrode comprising a multilayer structure chosen from the group consisting of TiW/AlSi and TiW/AlSi/Ti-W; a field dielectric layer disposed over said lower electrode; an antifuse aperture extending completely through said field dielectric and said lower electrode; an antifuse material disposed in said antifuse aperture, said antifuse material comprising a multilayer structure including at least a layer of silicon nitride and a layer of amorphous silicon; and an upper electrode disposed above said field dielectric layer and said antifuse material.
Claim 12
Dependent Claim
15 words
The electrically programmable antifuse of claim 9 wherein said layer of amorphous silicon is doped.
Claim 13
Dependent Claim
15 words
The electrically programmable antifuse of claim 9 wherein said layer of amorphous silicon is hydrogenated.
Claim 14
Dependent Claim
15 words
The electrically programmable antifuse of claim 11 wherein said layer of amorphous silicon is doped.
Claim 15
Dependent Claim
102 words
An electrically programmable antifuse, including: a lower electrode comprising a multilayer structure chosen from the group consisting of TiW/AlSi and TiW/AlSi/TiW; a field dielectric layer disposed over said lower electrode; an antifuse aperture extending completely through said field dielectric and said lower electrode; an antifuse material disposed in said antifuse aperture, said antifuse material comprising said antifuse material is a multilayer structure including a first dielectric layer, a layer of amorphous silicon over said first dielectric layer, and a second dielectric layer over said layer of amorphous silicon; and an upper electrode disposed above said field dielectric layer and said antifuse material.
Claim 16
Dependent Claim
102 words
An electrically programmable antifuse, including: a lower electrode comprising a multilayer structure chosen from the group consisting of TiW/AlSi and TiW/AlSi/TiW; a field dielectric layer disposed over said lower electrode; an antifuse aperture extending completely through said field dielectric and said lower electrode; an antifuse material disposed in said antifuse aperture, said antifuse material comprising said antifuse material is a multilayer structure including a first dielectric layer, a layer of amorphous silicon over said first dielectric layer, and a second dielectric layer over said layer of amorphous silicon; and an upper electrode disposed above said field dielectric layer and said antifuse material.
Claim 17
Dependent Claim
28 words
The electrically programmable antifuse of claim 13 wherein said first and second dielectric layers are formed from a silicon nitride of the formula Si x N y :H.
Claim 18
Dependent Claim
21 words
The electrically programmable antifuse of claim 14 wherein the hydrogen content of said first and second dielectric layers is about 10%.
Claim 19
Dependent Claim
11 words
The electrically programmable antifuse of claim 14 wherein x=3 and y=4.
Claim 20
Dependent Claim
27 words
The electrically programmable antifuse of claim 14 wherein x is an integer between 1 and 3 inclusive, and y is an integer between 0 and 4 inclusive.
Claim 21
Dependent Claim
27 words
The electrically programmable antifuse of claim 13 wherein said first and second dielectric layers are formed from silicon nitride of the formula Si 3 N 4 .
Claim 22
Dependent Claim
28 words
The electrically programmable antifuse of claim 13 wherein said first and second dielectric layers have a thickness in the range of from about 50 to about 300 Å.
Claim 23
Dependent Claim
29 words
The electrically programmable antifuse of claim 14 wherein the hydrogen content of said first and second dielectric layers is in the range of from about 5% to about 40%.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |