Word line driving circuit of a semiconductor memory device

Claim 2

A word line driving circuit for use in a semiconductor memory device having a first supply voltage to which a pumping voltage higher than a supply voltage supplied from the exterior of the memory device is applied, and a second supply voltage to which a ground voltage is applied, said word line driving circuit comprising: decoding means connected between said first supply voltage and said second supply voltage, for receiving row address signals; transfer means coupled to an output node of said decoding means and to a word line boosting signal; word line driving circuit output means connected between said first supply voltage and said second supply voltage, and coupled to an output node of said transfer means, for driving a word line, in response to an output signal of said transfer means; and, wherein said second supply voltage connected to said word line driving circuit output means is coupled to a pad connected to a ground voltage pin of the semiconductor memory device and is only connected to said word line driving circuit.

Claim 3

The word line driving circuit as claimed in claim 1, further comprising precharge means connected to said output node of said decoding means, for precharging said output node of said decoding means.

Claim 4

The word line driving circuit as claimed in claim 2, wherein said precharge means comprises a pull-down transistor having a first electrode connected to said output node of said decoding means and is controlled by a word line reset signal.

Claim 5

A word line driving circuit for use in a semiconductor memory device having a first supply voltage to which a pumping voltage is applied and a second supply voltage to which a ground voltage is applied, said word line driving circuit comprising: decoding means connected between said first supply voltage and said second supply voltage, for receiving decoded row address signals; precharge means connected to an output terminal of said decoding means, for precharging said output terminal of said decoding means; transfer means connected to said output terminal of said decoding means, said transfer means including a pull-down transistor controlled by a word line boosting signal; and, latch output means connected between said first supply voltage and said second supply voltage, and coupled to an output terminal of said transfer means, said latch output means including a pull-up transistor for supplying said first supply voltage to a word line.

Claim 6

A word line driving circuit for use in a semiconductor memory device having a first supply voltage to which a pumping voltage is applied and a second supply voltage to which a ground voltage is applied, said word line driving circuit comprising: decoding means connected between said first supply voltage and said second supply voltage, for receiving decoded row address signals; precharge means connected to an output terminal of said decoding means, for precharging said output terminal of said decoding means; transfer means connected to said output terminal of said decoding means, said transfer means including a pull-down transistor controlled by a word line boosting signal; and, latch output means connected between said first supply voltage and said second supply voltage, and coupled to an output terminal of said transfer means, said latch output means including a pull-up transistor for supplying said first supply voltage to a word line.

Claim 7

The word line driving circuit as claimed in claim 4, wherein said second supply voltage connected to said latch output means branches off from a lead frame connected to a ground voltage pin of the semiconductor memory device and is connected only to said word line driving circuit, said lead frame being positioned within the semiconductor memory device.

Claim 8

The word line driving circuit as claimed in claim 4, wherein said decoding means comprises: a first pull-up transistor having a first electrode connected to said first supply voltage; a second pull-up transistor having a first electrode connected to said first supply voltage, and a gate electrode coupled to a second electrode of said first pull-up transistor; driving transistors serially connected between said second electrode of said first pull-up transistor and said second supply voltage, said driving transistors being driven by said decoded row address signals; and, a first pull-down transistor having a first electrode connected to a second electrode of said second pull-up transistor and a gate electrode connected to said second electrode of said first pull-up transistor.

Claim 9

A word line driving circuit for use in a semiconductor memory device having a first supply voltage to which a pumping voltage is applied and a second supply voltage to which a ground voltage is applied, said word line driving circuit comprising: decoding means connected between said first supply voltage and said second supply voltage, for receiving decoded row address signals; control means connected to an output node of said decoding means, said control means receiving said decoded row address signals, wherein said control means and said decoding means are complementarily switched by said decoded row address signals; and, precharge means connected to said output node of said decoding means, for precharging said output node of said decoding means.

Claim 10

A word line driving circuit for use in a semiconductor memory device having a first supply voltage to which a pumping voltage is applied and a second supply voltage to which a ground voltage is applied, said word line driving circuit comprising: decoding means connected between said first supply voltage and said second supply voltage, for receiving decoded row address signals; control means connected to an output node of said decoding means, said control means receiving said decoded row address signals, wherein said control means and said decoding means are complementarily switched by said decoded row address signals; and, precharge means connected to said output node of said decoding means, for precharging said output node of said decoding means.

Claim 11

The word line driving circuit as claimed in claim 7, wherein said decoding means includes a plurality of NMOS transistors and said control means includes a plurality of PMOS transistors.

Claim 12

A word line driving circuit for use in a semiconductor memory device having a first supply voltage to which a pumping voltage higher than a supply voltage supplied from the exterior of the memory device is applied and a second supply voltage to which a ground voltage is applied, said word line driving circuit comprising: a decoder circuit including a first pull-up transistor having a first electrode connected to said first supply voltage, a second pull-up transistor having a first electrode connected to said first supply voltage and a gate electrode connected to a second electrode of said first pull-up transistor, a plurality of driving transistors serially connected between said second electrode of said first pull-up transistor and said second supply voltage, said driving transistors being driven by decoded row address signals, and a first pull-down transistor having a first electrode connected to said second electrode of said second pull-up transistor and a gate electrode connected to said second electrode of said first pull-up transistor; a transfer circuit including a CMOS inverter having an input terminal connected to an output node of said decoder circuit, and a third pull-down transistor connected between an NMOS transistor of said CMOS inverter and said second supply voltage and controlled by a word line boosting signal; and, a word line output circuit including a third pull-up transistor having a first electrode connected to said first supply voltage, a fourth pull-up transistor having a first electrode connected to said first supply voltage, a second electrode connected to a word line, and a gate electrode connected to a second electrode of said third pull-up transistor, and a fourth pull-down transistor having a first electrode connected to a second electrode of said fourth pull-up transistor and a gate electrode connected to an output node of said transfer circuit.

Claim 13

A word line driving circuit for use in a semiconductor memory device having a first supply voltage to which a pumping voltage higher than a supply voltage supplied from the exterior of the memory device is applied and a second supply voltage to which a ground voltage is applied, said word line driving circuit comprising: a decoder circuit including a first pull-up transistor having a first electrode connected to said first supply voltage, a second pull-up transistor having a first electrode connected to said first supply voltage and a gate electrode connected to a second electrode of said first pull-up transistor, a plurality of driving transistors serially connected between said second electrode of said first pull-up transistor and said second supply voltage, said driving transistors being driven by decoded row address signals, and a first pull-down transistor having a first electrode connected to said second electrode of said second pull-up transistor and a gate electrode connected to said second electrode of said first pull-up transistor; a transfer circuit including a CMOS inverter having an input terminal connected to an output node of said decoder circuit, and a third pull-down transistor connected between an NMOS transistor of said CMOS inverter and said second supply voltage and controlled by a word line boosting signal; and, a word line output circuit including a third pull-up transistor having a first electrode connected to said first supply voltage, a fourth pull-up transistor having a first electrode connected to said first supply voltage, a second electrode connected to a word line, and a gate electrode connected to a second electrode of said third pull-up transistor, and a fourth pull-down transistor having a first electrode connected to a second electrode of said fourth pull-up transistor and a gate electrode connected to an output node of said transfer circuit.