Patent US5415718A successfully refreshed from Google Patents.
US5415718A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reactive ion etching device
Assignee: Frontec Inc
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Filing: 1991-09-20
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Granted: 1995-05-16
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Expires: 2011-09-20
Abstract
Abstract An object of this invention is to provide an RIE apparatus, for instance, with which conditions for an etching process such as an etching speed can be set easily, precisely, and with repeatability, by, for instance, introducing a novel concept that is the flow rate of charged particles which can directly be measured as a quantity proportional to the quantity of bombarded ions. Accordingly, this invention is characterized in that said reactive ion etching apparatus has an electrode potential detecting means which detects the electric potential of said electrodes, a high-frequency power detecting means which detects an output from said high frequency power supply, a first computing means which computes an ion energy of said ions produced in a process of reactive ion etching based on said electric potential, a second computing means which computes the flow rate of charged particles related to said ions based on said detected output, and a control means which controls at least one of the following; the quantity of a gas led into said reaction chamber, an exhaust speed in said reaction chamber, and output from said high-frequency power supply, and the frequency of said high-frequency power, based on the result of an output from at least one of the aforesaid first computing means and said second computing means.
Inventors
- 👤 Tadahiro Ohmi
- 👤 Yasuhiko Kasama
- 👤 Hirobumi Fukui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:59
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32917; H01J37/32935; H01J37/3299; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3341
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
283 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on a value of self-bias formed on said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; second computing means for computing a second value representing a flux of charged particles related to said ions based on said output; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said control means controls said high-frequency power so that said high-frequency power increases if said ion energy is smaller than a set value, and said high-frequency power decreases if said ion energy is larger than said set value.
Claim 2
Dependent Claim
283 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on a value of self-bias formed on said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; second computing means for computing a second value representing a flux of charged particles related to said ions based on said output; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said control means controls said high-frequency power so that said high-frequency power increases if said ion energy is smaller than a set value, and said high-frequency power decreases if said ion energy is larger than said set value.
Claim 3
Dependent Claim
315 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on a value of self-bias formed on said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; second computing means for computing a second value representing a flux of charged particles related to said ions based on said output; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said control means controls pressure in said reaction chamber so that said exhaust speed from said reaction chamber increases or said quantity of a gas fed into said reaction chamber decreases if said flux is larger than a set value, and said exhaust speed from said reaction chamber decreases or said quantity of a gas fed into said reaction chamber increases if said flux is smaller than said set value.
Claim 4
Dependent Claim
315 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on a value of self-bias formed on said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; second computing means for computing a second value representing a flux of charged particles related to said ions based on said output; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said control means controls pressure in said reaction chamber so that said exhaust speed from said reaction chamber increases or said quantity of a gas fed into said reaction chamber decreases if said flux is larger than a set value, and said exhaust speed from said reaction chamber decreases or said quantity of a gas fed into said reaction chamber increases if said flux is smaller than said set value.
Claim 5
Dependent Claim
39 words
The reactive ion etching device according to claim 2, wherein said control means controls said frequency of said high-frequency electric power so that said frequency increases if the pressure in said reaction chamber is larger than a set value.
Claim 6
Dependent Claim
284 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on said electric potential; second computing means for computing a second value representing a flux of charged particle ions based on a value of the high-frequency electric power supplied to said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said control means controls said high-frequency power so that said high-frequency power increases if said ion energy is smaller than a set value, and said high-frequency power decreases if said ion energy is larger than said set value.
Claim 7
Dependent Claim
284 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on said electric potential; second computing means for computing a second value representing a flux of charged particle ions based on a value of the high-frequency electric power supplied to said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said control means controls said high-frequency power so that said high-frequency power increases if said ion energy is smaller than a set value, and said high-frequency power decreases if said ion energy is larger than said set value.
Claim 8
Dependent Claim
305 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on said electric potential; second computing means for computing a second value representing a flux of charged particle ions based on a value of the high-frequency electric power supplied to said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said exhaust speed from said reaction chamber increases or said quantity of a gas fed into said reaction chamber decreases if said flux is larger than a set value, and said exhaust speed from said reaction chamber decreases or said quantity of a gas fed into said reaction chamber increases if said flux is smaller than said set value.
Claim 9
Dependent Claim
305 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on said electric potential; second computing means for computing a second value representing a flux of charged particle ions based on a value of the high-frequency electric power supplied to said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said exhaust speed from said reaction chamber increases or said quantity of a gas fed into said reaction chamber decreases if said flux is larger than a set value, and said exhaust speed from said reaction chamber decreases or said quantity of a gas fed into said reaction chamber increases if said flux is smaller than said set value.
Claim 10
Dependent Claim
39 words
The reactive ion etching device according to claim 5, wherein said control means controls said frequency of said high-frequency electric power so that said frequency increases if the pressure of said reaction chamber is larger than a set value.
Claim 11
Dependent Claim
309 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on a value of self-bias formed on said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; second computing means for computing a second value representing a flux of charged particles related to said ions based on said output; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said frequency of said high-frequency electric power increases if said ion energy is larger than a set value for said ion energy or said flux is smaller than a set value for said flux, and said frequency decreases if said ion energy is smaller than said set value for said ion energy or said flux is larger than said set value for said flux.
Claim 12
Dependent Claim
309 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on a value of self-bias formed on said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; second computing means for computing a second value representing a flux of charged particles related to said ions based on said output; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said frequency of said high-frequency electric power increases if said ion energy is larger than a set value for said ion energy or said flux is smaller than a set value for said flux, and said frequency decreases if said ion energy is smaller than said set value for said ion energy or said flux is larger than said set value for said flux.
Claim 13
Dependent Claim
310 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on said electric potential; second computing means for computing a second value representing a flux of charged particles ions based on a value of the high-frequency electric power supplied to said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said frequency of said high-frequency electric power increases if said ion energy is larger than a set value for said ion energy or said flux is smaller than a set value for said flux, and said frequency decreases if said ion energy is smaller than said set value for said ion energy or said flux is larger than said set value for said flux.
Claim 14
Dependent Claim
310 words
A reactive ion etching device comprising: a reaction chamber having a gas inlet and an exhaust outlet; at least two electrodes disposed in said reaction chamber; a high-frequency power supply connected to one of said electrodes to generate plasma in a space between said electrodes, wherein ions in said plasma are bombarded onto an object placed on said one electrode to be processed; a high-frequency power detecting means for detecting an output from said high-frequency power supply; an electrode potential detecting means for detecting an electric potential of said one electrode; first computing means for computing a first value representing an ion energy of said ions produced in a process of reactive ion etching based on said electric potential; second computing means for computing a second value representing a flux of charged particles ions based on a value of the high-frequency electric power supplied to said one electrode and a value of amplitude of high-frequency electric potential generated on said one electrode; and control means for controlling at least one of the following so that at least one of the first and second values computed by said first computing means and said second computing means, respectively, falls within a range of optimal values for one of said ion energy and said flux: the quantity of a gas fed into said reaction chamber, an exhaust speed from said reaction chamber, a power supply output from said high-frequency power supply, and a frequency of said high-frequency power, wherein said frequency of said high-frequency electric power increases if said ion energy is larger than a set value for said ion energy or said flux is smaller than a set value for said flux, and said frequency decreases if said ion energy is smaller than said set value for said ion energy or said flux is larger than said set value for said flux.
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