Abstract Disclosed herein are a dry etching method and a dry etching apparatus. The method comprises a step of applying an etching inhibiting gas to that portion of a workpiece where etching speed is high, while the workpiece is being etched with reactive-gas plasma. The apparatus comprises functions for holding a reactive etching gas, a first electrode located within the gas-holding functions, for supporting a workpiece, a second electrode located within the gas-holding functions and spaced apart from the first electrode by a predetermined distance, functions for supplying high-frequency power, thereby to convert the reactive etching gas into a plasma in the space between the first and second electrodes, and functions for supplying an etching inhibiting gas to that portion of the workpiece where etching speed is high.
A dry etching method comprising a step of applying an etching inhibiting gas to that portion of a workpiece where etching speed is higher by 10% or more than an etching speed at a central portion of the workpiece, while the workpiece is being etched with reactive-gas plasma, wherein the etching inhibiting gas includes one of gases generated while the workpiece is being etched with reactive-gas plasma.
Claim 2
Dependent Claim
67 words
A dry etching method comprising a step of applying an etching inhibiting gas to that portion of a workpiece where etching speed is higher by 10% or more than an etching speed at a central portion of the workpiece, while the workpiece is being etched with reactive-gas plasma, wherein the etching inhibiting gas includes one of gases generated while the workpiece is being etched with reactive-gas plasma.
Claim 3
Dependent Claim
18 words
A dry etching method according to claim 1, wherein the etching inhibiting gas includes a metal halide gas.
Claim 4
Dependent Claim
18 words
A dry etching method according to claim 1, wherein the etching inhibiting gas includes a silicon halide gas.
Claim 5
Dependent Claim
18 words
A dry etching method according to claim 1, wherein the etching inhibiting gas includes an carbon oxide gas.