US5423936A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma etching system
Assignee: Tokyo Electron Ltd
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Filing: 1993-10-19
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Granted: 1995-06-13
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Expires: 2013-10-19
Abstract
Abstract The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m2/hr.
Inventors
- 👤 Kazushi Tomita
- 👤 Yoshikazu Ito
- 👤 Motohiro Hirano
- 👤 Akira Nozawa
- 👤 Hiromitsu Matsuo
- 👤 Shunichi Iimuro
- 👤 Shigeki Tozawa
- 👤 Yutaka Miura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:50
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; H01J37/32449; H10; H10P; H10P50/00; H01J37/32532; H01J37/32715; H01J37/32724; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3343; H01J2237/3347
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
228 words
A plasma etching system, comprising: a process chamber enclosing a plasma; means for evacuating said process chamber; a chuck electrode for supporting a substrate; a shower electrode for forming a plasma discharge circuit between said chuck electrode and said shower electrode; a power source for applying a plasma voltage between the chuck electrode and said shower electrode; and gas supply means for supplying a plasma-forming gas into the process chamber; wherein the shower electrode includes: a cathode plate facing a substrate on the chuck electrode; a cooling plate laminated on said cathode plate to cool the cathode plate; a number of gas inlet holes formed in said cooling plate for introducing said gas from said gas supply means; a number of small holes formed in the cathode plate to communicate with said gas inlet holes, each of said small holes having an open end facing the chuck electrode being smaller in diameter than the gas inlet holes, and having a stepped portion in a region where said small hole communicates with the gas inlet hole; and control means for controlling the gas supply means such that said gas flows through the stepped portion between the small hole and the gas inlet hole at a mass flow rate of at least 620 kg/m 2 /hour, thereby preventing a component of said gas from being deposited on the stepped portion.
Claim 2
Dependent Claim
228 words
A plasma etching system, comprising: a process chamber enclosing a plasma; means for evacuating said process chamber; a chuck electrode for supporting a substrate; a shower electrode for forming a plasma discharge circuit between said chuck electrode and said shower electrode; a power source for applying a plasma voltage between the chuck electrode and said shower electrode; and gas supply means for supplying a plasma-forming gas into the process chamber; wherein the shower electrode includes: a cathode plate facing a substrate on the chuck electrode; a cooling plate laminated on said cathode plate to cool the cathode plate; a number of gas inlet holes formed in said cooling plate for introducing said gas from said gas supply means; a number of small holes formed in the cathode plate to communicate with said gas inlet holes, each of said small holes having an open end facing the chuck electrode being smaller in diameter than the gas inlet holes, and having a stepped portion in a region where said small hole communicates with the gas inlet hole; and control means for controlling the gas supply means such that said gas flows through the stepped portion between the small hole and the gas inlet hole at a mass flow rate of at least 620 kg/m 2 /hour, thereby preventing a component of said gas from being deposited on the stepped portion.
Claim 3
Dependent Claim
40 words
The plasma etching system according to claim 1, wherein a spurting region of the plasma-forming gas from the small holes made in said shower electrode covers a range of up to 180 mm from a center of the shower electrode.
Claim 4
Dependent Claim
46 words
The plasma etching system according to claim 1, wherein a spurting region of the plasma-forming gas from the small holes made in said shower electrode covers a range of up to 180 mm and not smaller than 120 mm from a center of the shower electrode.
Claim 5
Dependent Claim
26 words
The plasma etching system according to claim 1, wherein said shower electrode is provided with small holes provided at a pitch of at least 6 mm.
Claim 6
Dependent Claim
28 words
The plasma etching system according to claim 1, wherein said shower electrode is provided with small holes each having a gas spurting diameter of less than 0.8 mm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-06-12 | 1998-12-12 | 1999-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-12 | 2002-12-12 | 2003-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-12 | 2006-12-12 | 2007-06-13 | $7700.00 | Window Closed / Lapsed |