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US5424252A
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US
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Photo-plating solution and process
Assignee: Toyota Central R&D Labs Inc
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Filing: 1993-11-16
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Granted: 1995-06-13
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Expires: 2013-11-16
Abstract
Abstract An electroless metal or alloy plating solution as a photo-plating solution contains at least one of copper, nickel, cobalt or tin, and a sacrificial reagent which supplies electrons as a result of irreversible oxidative decomposition. A semiconductor is supported on a substrate, and dipped in the photo-plating solution, and the surface of the semiconductor is irradiated with light having a higher level of energy than the exciting energy of the semiconductor. A thick coating containing at least one of copper, nickel, cobalt or tin can be formed on that portion of the semiconductor which has been irradiated with light.
Inventors
- 👤 Shinya Morishita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:27
CPC Classifications
C; C23; C23C; C23C18/00; C23C18/16; C23C18/1601; C23C18/1603; C23C18/1607; C23C18/1612; C23C18/161; C23C18/1633; C23C18/1635; C23C18/1639; C23C18/1642; C23C18/31; H; H05; H05K; H05K3/00; H05K3/10; H05K3/18; H05K3/181; H05K3/182; H05K3/185
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
151 words
A process for photo-plating a semiconductor which comprises the steps of supporting a semiconductor on a substrate, immersing said semiconductor in an electroless metal or alloy plating solution which comprises at least one metal or at least one alloy thereof, said at least one metal being selected from the group consisting of copper, nickel, cobalt and tin, and a sacrificial reagent for supplying electrons by irreversible oxidative decomposition, wherein said sacrificial reagent comprises a substance serving also as a complexing agent to stabilize ions of said at least one metal in said electroless plating solution and which comprises at least one compound selected from the group consisting of amines, imines, alkanolamines, hydroxycarboxylic acids and aminocarboxylic acids, and irradiating the surface of said semiconductor with light having a higher level of energy than the exciting energy of said semiconductor; wherein said process forms a film of 10μ to several tens of μm.
Claim 2
Dependent Claim
151 words
A process for photo-plating a semiconductor which comprises the steps of supporting a semiconductor on a substrate, immersing said semiconductor in an electroless metal or alloy plating solution which comprises at least one metal or at least one alloy thereof, said at least one metal being selected from the group consisting of copper, nickel, cobalt and tin, and a sacrificial reagent for supplying electrons by irreversible oxidative decomposition, wherein said sacrificial reagent comprises a substance serving also as a complexing agent to stabilize ions of said at least one metal in said electroless plating solution and which comprises at least one compound selected from the group consisting of amines, imines, alkanolamines, hydroxycarboxylic acids and aminocarboxylic acids, and irradiating the surface of said semiconductor with light having a higher level of energy than the exciting energy of said semiconductor; wherein said process forms a film of 10μ to several tens of μm.
Claim 3
Dependent Claim
32 words
A process as set forth in claim 1, wherein said sacrificial reagent comprises at least one compound selected from the group consisting of triethanolamine, ethylenediaminetetraacetic acid, citric acid and potassium sodium tartrate.
Claim 4
Dependent Claim
54 words
A process as set forth in claim 1, wherein said sacrificial reagent has a concentration which is higher by at least one figure than that of oxygen dissolved in said electroless plating solution, and 2 to 25 times higher than that of ions of said at least one metal in said electroless plating solution.
Claim 5
Dependent Claim
18 words
A process as set forth in claim 1, wherein said substrate is of alumina, or a glass-epoxy laminate.
Claim 6
Dependent Claim
40 words
A process as set forth in claim 1, wherein said semiconductor is of the type in which its conduction band has an energy level which is more negative than the reduction potential of ions of said at least one metal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-06-12 | 1998-12-12 | 1999-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-12 | 2002-12-12 | 2003-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-12 | 2006-12-12 | 2007-06-13 | $7700.00 | Window Closed / Lapsed |