US5426322A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diodes for electrostatic discharge protection and voltage references
Assignee: Individual
•
Filing: 1993-08-20
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Granted: 1995-06-20
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Expires: 2013-08-20
Abstract
Abstract A novel process is taught for forming diodes simulataneouly with the formation of typical prior art Ldd MOS devices. The diodes thus formed have low breakdown voltages, making them suitable for use as voltage reference diodes, or diodes for ESD protection.
Inventors
- 👤 Philip Shiota
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:01
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/811; H10D89/00; H10D89/60; H10D89/601; H10D89/611; H10D89/711
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
297 words
A semiconductor structure comprising: a first bulk region of a first conductivity type; a lightly doped source/drain region of a second conductivity type opposite said first conductivity type, formed within said first bulk region; a second bulk region of said second conductivity type; a lightly doped portion of a first diode region formed within said second bulk region and to a different doping concentration than said second bulk region; a lightly doped source/drain region of said first conductivity type formed within said second bulk region; a lightly doped portion of a first diode region, formed within said first bulk region and to a different doping concentration than said first bulk region; a second conductivity type portion of said first diode region, formed within said first bulk region; a source/drain region of said second conductivity type, formed within said first bulk region; a connection to said second bulk region; a connection to said first bulk region; a source/drain region of said first conductivity type, formed within said second bulk region; and a first conductivity type portion of said first diode region, formed within second bulk region, wherein said first bulk region comprises a lightly doped source/drain MOS device and a diode having said second conductivity type portion of said first diode region formed within said first bulk region serving as a first terminal of said diode and said connection to said first bulk region serving as a second terminal of said diode, and wherein said second bulk region comprises a lightly doped source/drain MOS device and a diode having said first conductivity type portion of said first diode region within said second bulk region serving as a first terminal of said diode and said connection to said second bulk region serving as a second terminal of said diode.
Claim 2
Dependent Claim
297 words
A semiconductor structure comprising: a first bulk region of a first conductivity type; a lightly doped source/drain region of a second conductivity type opposite said first conductivity type, formed within said first bulk region; a second bulk region of said second conductivity type; a lightly doped portion of a first diode region formed within said second bulk region and to a different doping concentration than said second bulk region; a lightly doped source/drain region of said first conductivity type formed within said second bulk region; a lightly doped portion of a first diode region, formed within said first bulk region and to a different doping concentration than said first bulk region; a second conductivity type portion of said first diode region, formed within said first bulk region; a source/drain region of said second conductivity type, formed within said first bulk region; a connection to said second bulk region; a connection to said first bulk region; a source/drain region of said first conductivity type, formed within said second bulk region; and a first conductivity type portion of said first diode region, formed within second bulk region, wherein said first bulk region comprises a lightly doped source/drain MOS device and a diode having said second conductivity type portion of said first diode region formed within said first bulk region serving as a first terminal of said diode and said connection to said first bulk region serving as a second terminal of said diode, and wherein said second bulk region comprises a lightly doped source/drain MOS device and a diode having said first conductivity type portion of said first diode region within said second bulk region serving as a first terminal of said diode and said connection to said second bulk region serving as a second terminal of said diode.
Claim 3
Dependent Claim
27 words
A structure as in claim 1 wherein said connection to said second bulk region comprises a second conductivity type contact region formed within said second bulk region.
Claim 4
Dependent Claim
27 words
A structure as in claim 1 wherein said connection to said first bulk region comprises a first conductivity type contact region formed within said first bulk region.
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