Method of making a sidewall contact

Claim 1

A method of manufacturing a semiconductor device comprising the steps of: forming an insulating film on a portion of the main surface of a semiconductor substrate having an impurity concentration of a certain conductivity type; forming a first polycrystalline conductor layer on said insulating film; connecting an end portion of said first polycrystalline conductor layer to said semiconductor substrate by means of a second conductor layer formed as a side wall by self-alignment; said step of forming said first polycrystalline conductor layer comprising doping with at least one impurity selected from the group consisting of arsenic, phosphorus or boron into said polycrystalline silicon layer; said step of connecting an end portion of said first polycrystalline conductor layer to said semiconductor substrate comprising (a) forming an oxide film on said substrate and said first polycrystalline conductor layer; (b) through said oxide film exposing a portion of said semiconductor substrate adjacent said first polycrystalline conductor layer; (c) forming an impurity layer in the exposed portion of said semiconductor substrate at a major surface thereof; (d) forming said second conductor layer on said impurity layer and said oxide film; and (e) removing said second conductor layer until said oxide film is exposed; wherein said step of removing the second conductor layer comprises the step of reactive ion etching; and wherein said step of connecting said first conductor layer to said semiconductor substrate further comprises the steps of: forming a nitride film and a first oxide film on said first conductor layer and on that portion of said semiconductor substrate where said first conductor layer is not formed; forming a second oxide film on said nitride film; forming a side wall of said first and second oxide film and said nitride film on the side portion of said first conductor layer by etching said nitride film and second oxide film from above said second oxide film until the surface of said first oxide film is exposed; removing a side wall of said second oxide film and said first oxide film on the portion other than the side portion of said first conductor layer by etching; forming said oxide film on said substrate and said first conductor layer by selective oxidation using the side wall of said nitride film and said first oxide film as a mask; removing the side wall of said nitride film.

Claim 2

A method of manufacturing a semiconductor device comprising the steps of: forming an insulating film on a portion of the main surface of a semiconductor substrate having an impurity concentration of a certain conductivity type; forming a first polycrystalline conductor layer on said insulating film; connecting an end portion of said first polycrystalline conductor layer to said semiconductor substrate by means of a second conductor layer formed as a side wall by self-alignment; said step of forming said first polycrystalline conductor layer comprising doping with at least one impurity selected from the group consisting of arsenic, phosphorus or boron into said polycrystalline silicon layer; said step of connecting an end portion of said first polycrystalline conductor layer to said semiconductor substrate comprising (a) forming an oxide film on said substrate and said first polycrystalline conductor layer; (b) through said oxide film exposing a portion of said semiconductor substrate adjacent said first polycrystalline conductor layer; (c) forming an impurity layer in the exposed portion of said semiconductor substrate at a major surface thereof; (d) forming said second conductor layer on said impurity layer and said oxide film; and (e) removing said second conductor layer until said oxide film is exposed; wherein said step of removing the second conductor layer comprises the step of reactive ion etching; and wherein said step of connecting said first conductor layer to said semiconductor substrate further comprises the steps of: forming a nitride film and a first oxide film on said first conductor layer and on that portion of said semiconductor substrate where said first conductor layer is not formed; forming a second oxide film on said nitride film; forming a side wall of said first and second oxide film and said nitride film on the side portion of said first conductor layer by etching said nitride film and second oxide film from above said second oxide film until the surface of said first oxide film is exposed; removing a side wall of said second oxide film and said first oxide film on the portion other than the side portion of said first conductor layer by etching; forming said oxide film on said substrate and said first conductor layer by selective oxidation using the side wall of said nitride film and said first oxide film as a mask; removing the side wall of said nitride film.