US5433790A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Deposit film forming apparatus with microwave CVD method
Assignee: Canon Inc
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Filing: 1994-11-18
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Granted: 1995-07-18
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Expires: 2014-11-18
Abstract
Abstract A deposit film forming apparatus is disclosed. Cylindrical substrates are disposed within a reaction vessel to be substantially sealed so as to surround a discharge space, and microwave introducing means is provided to form a microwave discharge plasma containing a reactant arising from a source gas and contributing to the formation of film, apply the voltage to an electrode provided on said discharge space, and form a deposit film on a surface of said substrate, characterized in that said microwave introducing means except for at least a microwave introducing dielectric window is constituted of two areas made of mutually different materials, a first area for transmitting the microwave is composed of a metal, and a second area in contact with the plasma is composed of a dielectric of which the product of a dielectric constant (ε) and a dielectric loss tangent (tan δ) at a frequency of used microwave is equal to or less than 2×10 -2 .
Inventors
- 👤 Hiroaki Niino
- 👤 Tetsuya Takei
- 👤 Ryuji Okamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:23
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32211; H01J37/32238
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
164 words
A film forming apparatus comprising cylindrical substrates disposed within a reaction vessel to be substantially sealed so as to surround a discharge space, and microwave introducing means provided to form a microwave discharge plasma containing a reactant arising from a source gas and contributing to the formation of film, applying a voltage to an electrode provided on said discharge space, and forming a deposit film on a surface of said substrate, wherein said microwave introducing means except for at least a microwave introducing dielectric window is constituted of two areas made of mutually different materials, a first area for transporting the microwave is composed of a metal, and a second area in contact with the plasma is composed of a dielectric of which the product of a dielectric constant (ε) and a dielectric loss tangent (tan δ) at a frequency of used microwave is equal to or less than 2×10 -2 , wherein said microwave introducing dielectric window is sandwiched between said first area.
Claim 2
Dependent Claim
164 words
A film forming apparatus comprising cylindrical substrates disposed within a reaction vessel to be substantially sealed so as to surround a discharge space, and microwave introducing means provided to form a microwave discharge plasma containing a reactant arising from a source gas and contributing to the formation of film, applying a voltage to an electrode provided on said discharge space, and forming a deposit film on a surface of said substrate, wherein said microwave introducing means except for at least a microwave introducing dielectric window is constituted of two areas made of mutually different materials, a first area for transporting the microwave is composed of a metal, and a second area in contact with the plasma is composed of a dielectric of which the product of a dielectric constant (ε) and a dielectric loss tangent (tan δ) at a frequency of used microwave is equal to or less than 2×10 -2 , wherein said microwave introducing dielectric window is sandwiched between said first area.
Claim 3
Dependent Claim
30 words
The film forming apparatus according to claim 1, wherein said second area constituting said microwave introducing means selected from the group consisting of ceramics, TEFLON (tetrafluoroethylene, fluorine-containing polymers) and polystyrene.
Claim 4
Dependent Claim
20 words
The film forming apparatus according to claim 1, wherein said second area constituting said microwave introducing means is alumina ceramics.
Claim 5
Dependent Claim
32 words
The film forming apparatus according to claim 1, wherein the thickness of said dielectric used in said second area constituting said microwave introducing means is equal to or less than 2 cm.
Claim 6
Dependent Claim
150 words
A film forming apparatus comprising a reaction vessel to be substantially sealable, microwave introducing means provided to form a microwave discharge plasma containing a reactant arising from a source gas and contributing to the formation of film, an electrode provided in said discharge plasma and an electrically conductive substrate for depositing said reactant, wherein said microwave introducing means has a microwave introducing dielectric window and a microwave introducing portion wherein said microwave introducing dielectric window and said microwave introducing portion comprises a first area which transmits the microwave and is composed of metal and a second area in contact with the plasma, which is composed of a dielectric of which the product of a dielectric constant (ε) and a dielectric loss (tan δ) at a frequency of used microwave is equal to or less than 2×10 -2 , wherein said microwave introducing dielectric window is sandwiched between said first area.
Claim 7
Dependent Claim
150 words
A film forming apparatus comprising a reaction vessel to be substantially sealable, microwave introducing means provided to form a microwave discharge plasma containing a reactant arising from a source gas and contributing to the formation of film, an electrode provided in said discharge plasma and an electrically conductive substrate for depositing said reactant, wherein said microwave introducing means has a microwave introducing dielectric window and a microwave introducing portion wherein said microwave introducing dielectric window and said microwave introducing portion comprises a first area which transmits the microwave and is composed of metal and a second area in contact with the plasma, which is composed of a dielectric of which the product of a dielectric constant (ε) and a dielectric loss (tan δ) at a frequency of used microwave is equal to or less than 2×10 -2 , wherein said microwave introducing dielectric window is sandwiched between said first area.
Claim 8
Dependent Claim
17 words
A film forming apparatus according to claim 5, wherein said microwave introducing means has a projecting shape.
Claim 9
Dependent Claim
18 words
A film forming apparatus according to claim 5, wherein a plurality of said microwave introducing means are provided.
Claim 10
Dependent Claim
22 words
A film forming apparatus according to claim 7, wherein the plurality of said microwave introducing means are provided opposed to each other.
Claim 11
Dependent Claim
26 words
A film forming apparatus according to claim 5, wherein at least said first area of said microwave introducing means is composed of aluminum or stainless steel.
Claim 12
Dependent Claim
37 words
A film forming apparatus according to claim 5, wherein at least said second area of said microwave introducing means is composed of alumina, beryllium oxide, boron nitride, silicon carbide, silicon oxide, TEFLON (tetrafluoroethylene, fluoride-containing polymer) or polystyrene.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-07-17 | 1999-01-16 | 1999-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-17 | 2003-01-16 | 2003-07-18 | $3760.00 | Window Closed / Lapsed |
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