Patent US5452178A successfully refreshed from Google Patents.
US5452178A
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Structure and method of making a capacitor for an intergrated circuit
Assignee: McMaster University
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Filing: 1994-04-07
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Granted: 1995-09-19
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Expires: 2014-04-07
Abstract
Abstract A capacitor structure for a memory element of an integrated circuit is provided. The capacitor is formed within a via hole defined through a first dielectric layer, and comprises a bottom electrode defined by an underlying conductive layer, and a capacitor dielectric filling the via with a dielectric barrier layer lining the via and separating the capacitor dielectric from the first dielectric layer. The capacitor dielectric is characterized by a material with high dielectric strength, preferably a ferroelectric material. An overlying conductive layer defines a top electrode contacting the capacitor dielectric. The barrier layer may comprise dielectric sidewall spacer formed within the via, or alternatively may comprise a region of mixed composition formed by interdiffusion of the first dielectric layer and the capacitor dielectric. The resulting capacitor structure is simple and compact, and may be fabricated with known CMOS, Bipolar or Bipolar-CMOS processes for submicron VLSI and ULSI integrated circuit.
Inventors
- 👤 Ismail T. Emesh
- 👤 Iain D. Calder
- 👤 Vu Q. Ho
- 👤 Gurvinder Jolly
- 👤 Lynnette D. Madsen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:18
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
113 words
A capacitor structure for a memory element of an integrated circuit formed on a substrate, comprising: a first conductive layer defining a first electrode on the substrate; an overlying layer of a first dielectric material defining sidewalls of a via extending through the first dielectric over the first electrode; the via being filled with a layer of a capacitor dielectric material characterized by a higher dielectric strength than the first dielectric material, the capacitor dielectric layer contacting the underlying first electrode, and the capacitor dielectric having a surface coplanar with a surface of the first dielectric layer; and, a second conductive layer defining a second electrode contacting the surface of the capacitor dielectric.
Claim 2
Dependent Claim
113 words
A capacitor structure for a memory element of an integrated circuit formed on a substrate, comprising: a first conductive layer defining a first electrode on the substrate; an overlying layer of a first dielectric material defining sidewalls of a via extending through the first dielectric over the first electrode; the via being filled with a layer of a capacitor dielectric material characterized by a higher dielectric strength than the first dielectric material, the capacitor dielectric layer contacting the underlying first electrode, and the capacitor dielectric having a surface coplanar with a surface of the first dielectric layer; and, a second conductive layer defining a second electrode contacting the surface of the capacitor dielectric.
Claim 3
Dependent Claim
132 words
A capacitor structure for a memory element of an integrated circuit formed on a substrate, comprising: a first conductive layer defining a first electrode on the substrate; an overlying layer of a first dielectric material defining sidewalls of a via extending through the first dielectric over the first electrode; the via being filled with a layer of capacitor dielectric material characterized by a higher dielectric strength than the first dielectric material and a dielectric barrier layer lining sidewalls of the via and separating the capacitor dielectric from the first dielectric layer, the capacitor dielectric layer contacting the underlying first electrode and the capacitor dielectric having a surface coplanar with the surface of the first dielectric layer; and, a second conductive layer defining a second electrode contacting the surface of the capacitor dielectric.
Claim 4
Dependent Claim
132 words
A capacitor structure for a memory element of an integrated circuit formed on a substrate, comprising: a first conductive layer defining a first electrode on the substrate; an overlying layer of a first dielectric material defining sidewalls of a via extending through the first dielectric over the first electrode; the via being filled with a layer of capacitor dielectric material characterized by a higher dielectric strength than the first dielectric material and a dielectric barrier layer lining sidewalls of the via and separating the capacitor dielectric from the first dielectric layer, the capacitor dielectric layer contacting the underlying first electrode and the capacitor dielectric having a surface coplanar with the surface of the first dielectric layer; and, a second conductive layer defining a second electrode contacting the surface of the capacitor dielectric.
Claim 5
Dependent Claim
16 words
A capacitor structure according to claim 2 wherein the capacitor dielectric comprises a ferroelectric dielectric material.
Claim 6
Dependent Claim
18 words
A capacitor structure according to claim 3 wherein the ferroelectric dielectric material comprises a perovskite structure ferroelectric material.
Claim 7
Dependent Claim
16 words
A capacitor structure according to claim 3 wherein the ferroelectric dielectric material comprises lead zirconate titanate.
Claim 8
Dependent Claim
20 words
A capacitor structure according to claim 2 wherein the dielectric barrier layer lining the via comprises a dielectric sidewall spacer.
Claim 9
Dependent Claim
34 words
A capacitor according to claim 3 wherein the dielectric barrier layer comprises a dielectric selected from the group consisting aluminium oxide, aluminium nitride, tantalum oxide, niobium oxide, strontium titanate, magnesium oxide and silicon oxynitride.
Claim 10
Dependent Claim
29 words
A capacitor structure according to claim 2 wherein the first dielectric is selected from the group consisting of silicon dioxide, silicon nitride, silicon oxynitride, polyimides and other polymer dielectrics.
Claim 11
Dependent Claim
48 words
A capacitor structure according to claim 2 wherein the dielectric barrier layer comprises an interface region between the first dielectric and the capacitor dielectric around sidewalls defining the via, the region comprising a mixing composition formed by interdiffusion of the first dielectric layer and the capacitor dielectric layer.
Claim 12
Dependent Claim
22 words
A capacitor structure according to claim 2 wherein the second conductive layer defining the second electrode comprises a first of interconnect metallization.
References Cited (Backward Citations)
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