Method of adjusting the pressure detection value of semiconductor pressure switches

Claim 1

A method of adjusting a semiconductor pressure switch to a predetermined pressure detection value, wherein the semiconductor pressure switch comprises a contact electrode supported on a semiconductor pressure-receiving diaphragm which defines part of a pressure cavity, and a reference electrode supported by a support substrate and spaced from the contact electrode within the pressure cavity such that pressure applied to the diaphragm on the external side of the pressure cavity effects inward displacement of the diaphragm to move the contact electrode into contact with the reference electrode to produce an output corresponding to a pressure detection value, the adjusting method comprising the steps of: (a) mounting and pressurizing the semiconductor pressure switch in a pressure chamber; (b) measuring the detection pressure at which the semiconductor pressure switch switches to determine if the pressure is above or below a predetermined pressure detection value; and (c) adjusting a thickness of the diaphragm thinning the diaphragm, if the measured pressure is above the predetermined pressure detection value, and thickening the diaphragm, if the measured pressure is below the predetermined pressure detection value, to adjust the measured pressure to the predetermined pressure detection value.

Claim 2

A method of adjusting a semiconductor pressure switch to a predetermined pressure detection value, wherein the semiconductor pressure switch comprises a contact electrode supported on a semiconductor pressure-receiving diaphragm which defines part of a pressure cavity, and a reference electrode supported by a support substrate and spaced from the contact electrode within the pressure cavity such that pressure applied to the diaphragm on the external side of the pressure cavity effects inward displacement of the diaphragm to move the contact electrode into contact with the reference electrode to produce an output corresponding to a pressure detection value, the adjusting method comprising the steps of: (a) mounting and pressurizing the semiconductor pressure switch in a pressure chamber; (b) measuring the detection pressure at which the semiconductor pressure switch switches to determine if the pressure is above or below a predetermined pressure detection value; and (c) adjusting a thickness of the diaphragm thinning the diaphragm, if the measured pressure is above the predetermined pressure detection value, and thickening the diaphragm, if the measured pressure is below the predetermined pressure detection value, to adjust the measured pressure to the predetermined pressure detection value.

Claim 10

A method of adjusting a semiconductor detection pressure switch to a predetermined pressure detection value, wherein the semiconductor pressure switch comprises a contact electrode supported on a semiconductor pressure-receiving diaphragm which defines part of a pressure cavity, and a reference electrode supported by a support substrate and spaced from the contact electrode within the pressure cavity such that pressure applied to the diaphragm on the external side of the pressure cavity effects inward displacement of the diaphragm to move the contact electrode into contact with the reference electrode to produce an output corresponding to a pressure detection value, the adjusting method comprising the steps of: (a) mounting at least one semiconductor pressure switch in a pressure chamber; and (b) adjusting the thickness of the diaphragm at least one semiconductor pressure switch by etching the diaphragm with a laser beam while applying thereto a pressure equal to the predetermined pressure detection value of the switch to make the switch operate at the predetermined pressure detection value.

Claim 11

A method of adjusting a semiconductor detection pressure switch to a predetermined pressure detection value, wherein the semiconductor pressure switch comprises a contact electrode supported on a semiconductor pressure-receiving diaphragm which defines part of a pressure cavity, and a reference electrode supported by a support substrate and spaced from the contact electrode within the pressure cavity such that pressure applied to the diaphragm on the external side of the pressure cavity effects inward displacement of the diaphragm to move the contact electrode into contact with the reference electrode to produce an output corresponding to a pressure detection value, the adjusting method comprising the steps of: (a) mounting at least one semiconductor pressure switch in a pressure chamber; and (b) adjusting the thickness of the diaphragm at least one semiconductor pressure switch by etching the diaphragm with a laser beam while applying thereto a pressure equal to the predetermined pressure detection value of the switch to make the switch operate at the predetermined pressure detection value.

Claim 14

A method of manufacturing a semiconductor pressure switch, the manufacturing method comprising the steps of: (a) etching a silicon substrate on an upper surface thereof to form a recessed portion; (b) forming a contact electrode on the recessed portion; (c) forming a reference electrode on a glass substrate; (d) aligning the glass substrate with the silicon substrate so that the reference electrode is spaced from and faces the contact electrode; (e) hermetically sealing the silicon substrate to the glass substrate; (f) etching the silicon substrate on a lower surface thereof to form a diaphragm thereby forming a semiconductor pressure switch; (g) mounting the semiconductor pressure switch in a pressure chamber; and (h) adjusting the thickness of the diaphragm by irradiating a laser beam onto a portion of the diaphragm while applying a pressure on the diaphragm equal to a predetermined pressure detection value of the switch to make the switch operate at the predetermined pressure detection value.

Claim 15

A method of manufacturing a semiconductor pressure switch, the manufacturing method comprising the steps of: (a) etching a silicon substrate on an upper surface thereof to form a recessed portion; (b) forming a contact electrode on the recessed portion; (c) forming a reference electrode on a glass substrate; (d) aligning the glass substrate with the silicon substrate so that the reference electrode is spaced from and faces the contact electrode; (e) hermetically sealing the silicon substrate to the glass substrate; (f) etching the silicon substrate on a lower surface thereof to form a diaphragm thereby forming a semiconductor pressure switch; (g) mounting the semiconductor pressure switch in a pressure chamber; and (h) adjusting the thickness of the diaphragm by irradiating a laser beam onto a portion of the diaphragm while applying a pressure on the diaphragm equal to a predetermined pressure detection value of the switch to make the switch operate at the predetermined pressure detection value.