US5457879A
Expired / Lapsed
US
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Method of shaping inter-substrate plug and receptacles interconnects
Assignee: NXP USA Inc
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Filing: 1994-01-04
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Granted: 1995-10-17
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Expires: 2014-01-04
Abstract
Abstract A method electrically and mechanically interconnects two surfaces of high density first and second semiconductor devices. The first semiconductor device (10) is formed with plug members (22) connected to nodes (18) of its circuit elements (14) and protruding from the first semiconductor device. The second semiconductor device (24) is formed having receptacle members (36) connected to nodes (32) of its circuit elements (28) and protruding from the second semiconductor device. The plug members are inserted into the receptacle member to interconnect the first and second semiconductor devices. The plug members may be removed from the receptacle member to disconnect the first and second semiconductor devices.
Inventors
- 👤 Richard W. Gurtler
- 👤 Henry G. Hughes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:29
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10W78/00; H10W90/00; H10W72/01; H10W72/012; H10W72/01251; H10W72/01255; H10W72/071; H10W72/072; H10W72/07221; H10W72/07227; H10W72/07231; H10W72/231; H10W72/234; H10W72/241; H10W72/251; H10W72/90; H10W72/951; H10W72/952; H10W90/20; H10W90/291; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49126; Y10T29/49147; Y10T29/49151; Y10T29/49153
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
69 words
A method of connecting first and second semiconductor substrates, comprising the steps of: forming a plug member on the first semiconductor substrate coupled to a node of the first semiconductor substrate; and forming a receptacle member on the second semiconductor substrate coupled to a node of the second semiconductor substrate, said plug member being adapted for insertion into said receptacle member to interconnect the first and second semiconductor substrates.
Claim 2
Independent Claim
69 words
A method of connecting first and second semiconductor substrates, comprising the steps of: forming a plug member on the first semiconductor substrate coupled to a node of the first semiconductor substrate; and forming a receptacle member on the second semiconductor substrate coupled to a node of the second semiconductor substrate, said plug member being adapted for insertion into said receptacle member to interconnect the first and second semiconductor substrates.
Claim 3
Dependent Claim
60 words
The method of claim 1 wherein said step of forming a receptacle member includes the steps of: providing the second substrate with an isolation layer disposed on said node of the second substrate; and disposing a dielectric layer having a predetermined variation in composition on said isolation layer to achieve an etch rate varying with height above said isolation layer.
Claim 4
Dependent Claim
25 words
The method of claim 2 wherein said step of forming a receptacle member includes the step of depositing a masking layer on said dielectric layer.
Claim 5
Dependent Claim
48 words
The method of claim 3 wherein said step of forming a receptacle member further includes the steps of: etching said dielectric to form a shaped region dependent on said varying etch rate; and etching said isolation layer to expose a portion of said nodes below said shaped region.
Claim 6
Dependent Claim
53 words
The method of claim 4 wherein said step of forming a receptacle member includes the steps of: stripping said masking layer; depositing a conformal conducting layer in said shaped region to form a receptacle wall; and removing said dielectric layer by etching process to leave said receptacle member protruding from the second substrate.
Claim 7
Independent Claim
120 words
A method of connecting first and second substrates, comprising the steps of: forming a plug member on the first substrate coupled to a node of the first substrate, said step of forming said plug member further including the steps of, (a) providing the first substrate with an isolation layer disposed on said node of the first substrate, and (b) disposing a dielectric layer having a predetermined variation in composition on said isolation layer to achieve an etch rate varying with height above said isolation layer; and forming a receptacle member on the second substrate coupled to a node of the second substrate, said plug member being adapted for insertion into said receptacle member to interconnect the first and second substrates.
Claim 8
Independent Claim
120 words
A method of connecting first and second substrates, comprising the steps of: forming a plug member on the first substrate coupled to a node of the first substrate, said step of forming said plug member further including the steps of, (a) providing the first substrate with an isolation layer disposed on said node of the first substrate, and (b) disposing a dielectric layer having a predetermined variation in composition on said isolation layer to achieve an etch rate varying with height above said isolation layer; and forming a receptacle member on the second substrate coupled to a node of the second substrate, said plug member being adapted for insertion into said receptacle member to interconnect the first and second substrates.
Claim 9
Dependent Claim
25 words
The method of claim 6 wherein said step of forming a plug member includes the step of depositing a masking layer on said dielectric layer.
Claim 10
Dependent Claim
32 words
The method of claim 7 wherein said step of forming a plug member further includes the step of etching said dielectric to form a shaped region dependent on said varying etch rate.
Claim 11
Dependent Claim
47 words
The method of claim 8 wherein said step of forming a plug member includes the steps of: stripping said masking layer; filling said shaped region with a conductive material; and removing said dielectric layer by etching process to leave said plug member protruding from the first substrate.
Claim 12
Independent Claim
82 words
A method of connecting first and second semiconductor substrates, comprising the steps of: forming a plug member on the first semiconductor substrate coupled to a node of the first semiconductor substrate; forming a receptacle member on the second semiconductor substrate coupled to a node of the second semiconductor substrate; inserting said plug member into said receptacle member to interconnect the first and second semiconductor substrates; and removing said plug member from said receptacle member to disconnect the first and second semiconductor substrates.
Claim 13
Independent Claim
82 words
A method of connecting first and second semiconductor substrates, comprising the steps of: forming a plug member on the first semiconductor substrate coupled to a node of the first semiconductor substrate; forming a receptacle member on the second semiconductor substrate coupled to a node of the second semiconductor substrate; inserting said plug member into said receptacle member to interconnect the first and second semiconductor substrates; and removing said plug member from said receptacle member to disconnect the first and second semiconductor substrates.
Claim 14
Dependent Claim
60 words
The method of claim 10 wherein said step of forming a plug member includes the steps of: providing the first substrate with an isolation layer disposed on said node of the first substrate; and disposing a dielectric layer having a predetermined variation in composition on said isolation layer to achieve an etch rate varying with height above said isolation layer.
Claim 15
Dependent Claim
25 words
The method of claim 11 wherein said step of forming a plug member includes the step of depositing a masking layer on said dielectric layer.
Claim 16
Dependent Claim
62 words
The method of claim 12 wherein said step of forming a plug member further includes the steps of: etching said dielectric to form a shaped region dependent on said varying etch rate; stripping said masking layer; filling said shaped region with a conductive material; and removing said dielectric layer by etching process to leave said plug member protruding from the first substrate.
Claim 17
Dependent Claim
60 words
The method of claim 10 wherein said step of forming a receptacle member includes the steps of: providing the second substrate with an isolation layer disposed on said node of the second substrate; and disposing a dielectric layer having a predetermined variation in composition on said isolation layer to achieve an etch rate varying with height above said isolation layer.
Claim 18
Dependent Claim
25 words
The method of claim 14 wherein said step of forming a receptacle member includes the step of depositing a masking layer on said dielectric layer.
Claim 19
Dependent Claim
47 words
The method of claim 15 wherein said step of forming a receptacle member further includes the steps of: etching said dielectric to form shaped regions dependent on said varying etch rate; and etching said isolation layer to expose a portion of said node below said shaped region.
Claim 20
Dependent Claim
52 words
The method of claim 16 wherein said step of forming a receptacle member includes the steps of: stripping said masking layer; depositing a conformal layer in said shaped region to form a receptacle wall; and removing said dielectric layer by etching process to leave said receptacle member protruding from the second substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-10-16 | 1999-04-17 | 1999-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-10-16 | 2003-04-17 | 2003-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-10-16 | 2007-04-17 | 2007-10-17 | $7700.00 | Window Closed / Lapsed |