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US5478698A
Expired / Lapsed
US
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Direct-write afocal electron-beam semiconductor lithography
Assignee: LSI Corp
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Filing: 1993-08-12
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Granted: 1995-12-26
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Expires: 2013-08-12
Abstract
Abstract A technique is describe for effecting very-high resolution semiconductor lithography using direct-write afocal electron-beam exposure of a sensitized wafer. A positioning mechanism and needle-like probe similar to those used in scanning-tunneling microscopy are used in conjunction with a controllable electron field emission source to produce a near-field electron beam capable of exposing an electron-beam sensitive resist on a wafer surface. Conventional e-beam resists are used. The technique can be used in conjunction with scanning-tunneling-like operation of the apparatus to record the appearance and nature of the wafer surface, thereby providing information about the location of underlying features. This location information can be used to assist in aligning the exposure patterns to existing structures in the semiconductor wafer. A multi-probe embodiment with separately controllable field emission sources provides for improved productivity by permitting contemporaneous exposure of multiple sites on a single wafer.
Inventors
- 👤 Michael D. Rostoker
- 👤 Nicholas F. Pasch
- 👤 Joe Zelayeta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:52
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3174; B; B82; B82Y; B82Y10/00; B82Y15/00; B82Y40/00; H01J2237/00; H01J2237/06; H01J2237/063; H01J2237/06325; H01J2237/06341; H01J2237/30; H01J2237/317; H01J2237/31735; Y; Y10; Y10S; Y10S430/00; Y10S430/143; Y10S977/00; Y10S977/84; Y10S977/849; Y10S977/855
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
161 words
A method of effecting direct-write electron-beam semiconductor lithography on a semiconductor wafer, comprising: disposing a semiconductor wafer on a surface of a wafer-receiving stage; disposing a layer of electron-beam-sensitive resist over a surface of the semiconductor wafer; positioning a probe above the surface of the wafer, probe having a tip facing the surface of the wafer; connecting an electron field emission source to the probe and generating therewith an electron beam having an associated electron beam current from the probe to the semiconductor wafer in an ambient comprising a chemically reactive gas; controlling a distance between the probe tip and the semiconductor wafer to a selected distance value; controlling the relative position of the semiconductor wafer and the probe tip so that selected points on the surface of the semiconductor wafer are directly under the probe tip; and controlling the electron beam current to effect electron beam exposure of the resist overlying the selected points on the surface of the wafer.
Claim 2
Independent Claim
161 words
A method of effecting direct-write electron-beam semiconductor lithography on a semiconductor wafer, comprising: disposing a semiconductor wafer on a surface of a wafer-receiving stage; disposing a layer of electron-beam-sensitive resist over a surface of the semiconductor wafer; positioning a probe above the surface of the wafer, probe having a tip facing the surface of the wafer; connecting an electron field emission source to the probe and generating therewith an electron beam having an associated electron beam current from the probe to the semiconductor wafer in an ambient comprising a chemically reactive gas; controlling a distance between the probe tip and the semiconductor wafer to a selected distance value; controlling the relative position of the semiconductor wafer and the probe tip so that selected points on the surface of the semiconductor wafer are directly under the probe tip; and controlling the electron beam current to effect electron beam exposure of the resist overlying the selected points on the surface of the wafer.
Claim 3
Dependent Claim
48 words
A method according to claim 1, further comprising: monitoring the electron beam current to determine a location of a structure underlying the resist layer; using said determined location as a positional reference; and defining the selected points on the surface of the wafer relative to the positional reference.
Claim 4
Dependent Claim
37 words
A method according to claim 1, further comprising: scanning the probe tip over a portion of the surface of the wafer and controlling the electron beam current while scanning to expose selected portions of the resist layer.
Claim 5
Dependent Claim
14 words
A method according to claim 3, wherein: moving the probe tip with piezoelectric positioners.
Claim 6
Dependent Claim
19 words
A method according to claim 1, further comprising maintaining said ambient of a chemically reactive gas above atmospheric pressure.
Claim 7
Independent Claim
136 words
A method of effecting direct-write electron-beam semiconductor lithography on a semiconductor wafer, comprising: forming a layer of electron-beam-sensitive resist over a surface of the semiconductor wafer; positioning a plurality of probes above the surface of the wafer, said probes being ganged together for integral relative movement parallel to the surface of the wafer and having tips facing the surface of the wafer respectively; connecting electron field emission sources to said probes and generating therewith electron beams having associated electron beam currents from the probe tips to the semiconductor wafer respectively; causing integral relative movement of said probes parallel to the surface of the wafer in a predetermined pattern; and controlling the electron beam currents to effect electron beam exposure of the resist underlying said probe tips to form substantially identical resist patterns in the resist respectively.
Claim 8
Independent Claim
136 words
A method of effecting direct-write electron-beam semiconductor lithography on a semiconductor wafer, comprising: forming a layer of electron-beam-sensitive resist over a surface of the semiconductor wafer; positioning a plurality of probes above the surface of the wafer, said probes being ganged together for integral relative movement parallel to the surface of the wafer and having tips facing the surface of the wafer respectively; connecting electron field emission sources to said probes and generating therewith electron beams having associated electron beam currents from the probe tips to the semiconductor wafer respectively; causing integral relative movement of said probes parallel to the surface of the wafer in a predetermined pattern; and controlling the electron beam currents to effect electron beam exposure of the resist underlying said probe tips to form substantially identical resist patterns in the resist respectively.
Claim 9
Dependent Claim
27 words
A method according to claim 6, further comprising maintaining the surface of the semiconductor wafer and said probe tips in an ambient comprising a chemically reactive gas.
Claim 10
Dependent Claim
19 words
A method according to claim 7, further comprising maintaining said ambient of a chemically reactive gas above atmospheric pressure.
Claim 11
Dependent Claim
23 words
A method according to claim 6, further comprising maintaining distances from said probe tips to the semiconductor wafer at a selected distance value.
Claim 12
Dependent Claim
60 words
A method according to claim 6, further comprising: monitoring one of the electron beam currents to determine a location of a structure underlying the resist layer; using the determined location as a positional reference; and causing the integral relative movement of said probes parallel to the surface of the wafer in the predetermined pattern as referenced to the positional reference.
References Cited (Backward Citations)
US4785189A
Cited
US5055871A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-25 | 1999-06-26 | 1999-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-25 | 2003-06-26 | 2003-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-25 | 2007-06-26 | 2007-12-26 | $7700.00 | Window Closed / Lapsed |