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US5486265A
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Chemical-mechanical polishing of thin materials using a pulse polishing technique
Assignee: GlobalFoundries Inc
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Filing: 1995-02-06
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Granted: 1996-01-23
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Expires: 2015-02-06
Abstract
Abstract Uniform chemical-mechanical planarization is achieved at a high material removal rate by pulsing the pressure applied to the wafer undergoing planarization between an initial optimum pressure and a reduced second pressure, preferably about 0 psi.
Inventors
- 👤 Isidore Salugsugan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 02:38
CPC Classifications
B; B24; B24B; B24B37/00; B24B37/04; B24B37/042; B24B37/07; B24B37/10; H; H10; H10P; H10P52/00
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
69 words
A method of manufacturing a semiconductor device wherein a surface on a wafer is planarized, comprising: placing the wafer to be planarized on a polishing pad; applying a polishing slurry to the polishing pad; chemical-mechanical polishing the surface to effect planarization while applying a first pressure to the wafer; and intermittently reducing the first pressure to a second pressure a plurality of times during chemical-mechanical polishing to reduce starvation.
Claim 2
Independent Claim
69 words
A method of manufacturing a semiconductor device wherein a surface on a wafer is planarized, comprising: placing the wafer to be planarized on a polishing pad; applying a polishing slurry to the polishing pad; chemical-mechanical polishing the surface to effect planarization while applying a first pressure to the wafer; and intermittently reducing the first pressure to a second pressure a plurality of times during chemical-mechanical polishing to reduce starvation.
Claim 3
Dependent Claim
27 words
The method according to claim 1, wherein the first pressure is about 6 to about 9 psi, and the second pressure is less than about 2 psi.
Claim 4
Dependent Claim
16 words
The method according to claim 2, wherein the second pressure is less than about 1 psi.
Claim 5
Dependent Claim
14 words
The method according to claim 3, wherein the second pressure is about 0 psi.
Claim 6
Dependent Claim
16 words
The method according to claim 1, wherein the surface of the wafer comprises an insulating material.
Claim 7
Dependent Claim
23 words
The method according to claim 5, wherein the insulating material is selected from the group consisting of an oxide, nitride, and mixtures thereof.
Claim 8
Dependent Claim
12 words
The method according to claim 6, wherein the insulating material is TEOS.
Claim 9
Dependent Claim
13 words
The method according to claim 6, wherein the insulating material is silicon dioxide.
Claim 10
Dependent Claim
33 words
The method according to claim 1, wherein the surface of the wafer comprises a material selected from the group consisting of an oxide, nitride, polysilicon, single crystalline silicon, amorphous silicon, and mixtures thereof.
Claim 11
Dependent Claim
11 words
The method according to claim 1, wherein the substrate comprises silicon.
Claim 12
Dependent Claim
26 words
The method according to claim 1, wherein the first pressure is intermittently reduced to the second pressure about every 1 to 15 seconds during chemical-mechanical polishing.
Claim 13
Dependent Claim
23 words
The method according to claim 11, wherein the first pressure is intermittently reduced to the second pressure about every 1 to 10 seconds.
Claim 14
Dependent Claim
23 words
The method according to claim 12, wherein the first pressure is intermittently reduced to the second pressure about every 1 to 5 seconds.
Claim 15
Dependent Claim
23 words
The method according to claim 13, wherein the first pressure is intermittently reduced to the second pressure about every 1 to 3 seconds.
Claim 16
Dependent Claim
14 words
The method according to claim 1, wherein the polishing pad comprises a fibrous polymer.
Claim 17
Dependent Claim
15 words
The method according to claim 4, wherein the slurry comprises potassium hydroxide and particular silica.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-22 | 1999-07-24 | 2000-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-22 | 2003-07-24 | 2004-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-22 | 2007-07-24 | 2008-01-23 | $7700.00 | Window Closed / Lapsed |